We report on the fabrications and characterizations of axial and radial Ga As nanowire pn junction diode arrays.The nanowires are grown on n-doped Ga As（111）B substrates using the Au-catalyzed vapor–liquid–solid m...We report on the fabrications and characterizations of axial and radial Ga As nanowire pn junction diode arrays.The nanowires are grown on n-doped Ga As（111）B substrates using the Au-catalyzed vapor–liquid–solid mechanism by metal–organic chemical vapor deposition（MOCVD）. Diethyl–zinc and silane are used as p- and n-type dopant precursors,respectively. Both the axial and radial diodes exhibit diode-like J–V characteristics and have similar performances under forward bias. Under backward bias, the axial diode has a large leakage current, which is attributed to the bending of the pn junction interface induced by two doping mechanisms in Au-catalyzed nanowires. The low leakage current and high rectification ratio make the radial diode more promising in electrical and optoelectronic devices.展开更多
We report the fabrication and characterization of a vertical pn power diode which is realized using two separate epitaxial-growth mechanisms： （a） p-GaN over p-（4H）SiC, and （b） p-GaN over n-（4H）SiC with A1N as...We report the fabrication and characterization of a vertical pn power diode which is realized using two separate epitaxial-growth mechanisms： （a） p-GaN over p-（4H）SiC, and （b） p-GaN over n-（4H）SiC with A1N as the interface layer. In all of the cases, n＋-doped （4H）SiC serves as the cathode substrate. Pd（200 A）/Au（10000 A） is used for the anode contact while Ni（1000A） is used for the bottom cathode contact. The measured forward drop of the pn diode with A1N as the interface material is found to be around 5.1 V; whereas, it is 3 V for the other sample structure. The measured reverse-blocking voltage is found to be greater than 200 V.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61376019 and 61020106007)the Specialized Research Fund for the Doctoral Program of Higher Education of China(Grant No.20120005110011)+2 种基金the Natural Science Foundation of Beijing(Grant No.4142038)the 111 Program of China(Grant No.B07005)the Fund of the State Key Laboratory of Information Photonics and Optical Communications(Beijing University of Posts and Telecommunications)
文摘We report on the fabrications and characterizations of axial and radial Ga As nanowire pn junction diode arrays.The nanowires are grown on n-doped Ga As（111）B substrates using the Au-catalyzed vapor–liquid–solid mechanism by metal–organic chemical vapor deposition（MOCVD）. Diethyl–zinc and silane are used as p- and n-type dopant precursors,respectively. Both the axial and radial diodes exhibit diode-like J–V characteristics and have similar performances under forward bias. Under backward bias, the axial diode has a large leakage current, which is attributed to the bending of the pn junction interface induced by two doping mechanisms in Au-catalyzed nanowires. The low leakage current and high rectification ratio make the radial diode more promising in electrical and optoelectronic devices.
基金Project supported by the US National Science Foundation(No.0823983)
文摘We report the fabrication and characterization of a vertical pn power diode which is realized using two separate epitaxial-growth mechanisms： （a） p-GaN over p-（4H）SiC, and （b） p-GaN over n-（4H）SiC with A1N as the interface layer. In all of the cases, n＋-doped （4H）SiC serves as the cathode substrate. Pd（200 A）/Au（10000 A） is used for the anode contact while Ni（1000A） is used for the bottom cathode contact. The measured forward drop of the pn diode with A1N as the interface material is found to be around 5.1 V; whereas, it is 3 V for the other sample structure. The measured reverse-blocking voltage is found to be greater than 200 V.
