A polarization mismatched p-GaN/p-Al_(0.25)Ga_(0.75)N/p-GaN structure to improve the hole injection for GaN based micro-LED with secondary etched mesa

A low hole injection efficiency for InGaN/GaN micro-light-emitting diodes(μLEDs) has become one of the main bottlenecks affecting the improvement of the external quantum efficiency(EQE) and the optical power. In this work, we propose and fabricate a polarization mismatched p-GaN/p-Al_(0.25)Ga_(0.75)N/p-GaN structure for 445 nm GaN-based μLEDs with the size of 40 × 40 μm^(2), which serves as the hole injection layer. The polarization-induced electric field in the p-GaN/p-Al_(0.25)Ga_(0.75)N/p-GaN structure provides holes with more energy and can facilitate the non-equilibrium holes to transport into the active region for radiative recombination. Meanwhile, a secondary etched mesa for μLEDs is also designed, which can effectively keep the holes apart from the defected region of the mesa sidewalls, and the surface nonradiative recombination can be suppressed. Therefore, the proposed μLED with the secondary etched mesa and the p-GaN/p-Al_(0.25)Ga_(0.75)N/p-GaN structure has the enhanced EQE and the improved optical power density when compared with the μLED without such designs.

Abnormal phase transition and polarization mismatch phenomena in BaTiO_(3)-based relaxor ferroelectrics

Relaxor ferroelectrics have been extensively studied due to their outstanding dielectric,piezoelectric,energy storage,and electro-optical properties.Although various theories were proposed to elaborate on the relaxation phenomena,polar nanoregions formed by disruption of the long-range-order structures are considered to play a key role in relaxor ferroelectrics.Generally,relaxor ferro-electrics are formed by aliovalent substitution or isovalent substitution in normal ferroelectrics,or further combinations of solid solutions.Herein,one category of BaTiO_(3)-based relaxor ferroelectrics with abnormal phase transition and polarization mismatch phenomena is focused.Characteristic parameters of such BaTiO_(3)-based relaxor ferroelectrics,including the Curie temperature,polarization,and lattice parameter,show a typical“U”-shaped variation with compositions.The studied BaTiO_(3)-based relaxor ferroelectrics are mostly solid solutions of A-site coupling and B-site coupling ferroelectrics,exhibiting polarization mismatch in certain compositions[e.g.,0.9BaTiO_(3)-0.1BiScO_(3),0.8BaTiO_(3)-0.2Bi(Mg_(1/2)Ti_(1/2)O_(3),0.8BaTiO_(3)-0.2Bi(Mg_(2/3)Nb_(1/3)O_(3),0.5BaTiO_(3)-0.5Pb(Mg_(1/3)Nb_(2/3)O_(3),0.4BaTiO_(3)-0.6Pb(Zn_(1/3)Nb_(2/3)O_(30,etc.].Of particular interest is that excellent electrical properties can be achieved in the studied relaxor ferroelectrics.Therefore,polarization mismatch theory can also provide guidance for the design of new high-performance lead-free relaxor ferroelectrics.

The first-principles study of ferroelectric behaviours of PbTiO3/SrTiO3 and BaTiOn/SrTiO3 superlattices

We have performed the first-principles calculation to investigate the origins of ferroelectricities and different po- larization behaviours of superlattices BaTiO3/SrTiO3 and PbTiO3/SrTiO3. The density of state （DOS） and electronic charge profiles show that there are strong hybridizations between atoms Ti and O and between atoms Pb and O which play very important roles in producing the ferroelectricities of superlattices BaTiO3/SrTiO3 and PbTiO3/SrTiO3. Ow- ing to the decline of internal electric field in SrTiO3 （ST） layer, the tetragonality and polarizations of superlattices decrease with increasing the fraction of SrTiO3 in the superlattices. We find that the polarization of PbTiO3/SrTiO3 is largerthan that of BaTiO3/SrTiO3 at the same ratio of components, because the polarization mismatch between PbTiO3 and SrTiO3 is larger than that between BaTiO3 and SrTiO3. The polarization and tetragonality are en- hanced with respect to those of bulk tetragonal BaTiO3 in the superlattices BaTiO3/SrTiO3, while the polarization and tetragonality are reduced with respect to those of bulk tetragonal PbTiO3 in superlattices PbTiO3/SrTiO3.