The structure of the extended gate ion sensitive field effect transistor (EGISFET) is similar to the structure of the ion sensitive field effect transistor (ISFET).Moreover,the non-ideal effect of EGISFET is the mai...The structure of the extended gate ion sensitive field effect transistor (EGISFET) is similar to the structure of the ion sensitive field effect transistor (ISFET).Moreover,the non-ideal effect of EGISFET is the main impediment to development of commercial processes for sensitive devices.It is necessary to promote the stability and reliability of the devices by employing calibration circuits and the better fabrication conditions.The temporal drift exists in the entire measurement experiment. Furthermore,in this study we can reduce the temporal drift effect which influences the stability of the TiN sensitive electrode with the differential front-end offset circuit.The measurement system combines with shifting circuit,differential and instrument amplifiers.We employ the calibration circuit to compare with the variations of the output voltage,and expectably improve the stability and reliability of the TiN sensitive electrode by the novel calibration circuit.展开更多
A compacted and low-offset low-power CMOS am- plifier for biosensor application is presented in this paper. It includes a low offset Op-Amp and a high precision current reference. With a novel continuous-time DC offse...A compacted and low-offset low-power CMOS am- plifier for biosensor application is presented in this paper. It includes a low offset Op-Amp and a high precision current reference. With a novel continuous-time DC offset rejection scheme, the IC achieves lower offset voltage and lower power consumption compared to previous designs. This configuration rejects large DC offset and drift that exist at the skin-electrode interface without the need of external components. The proposed amplifier has been implemented in SMIC 0.18-μm 1P6M CMOS technol-ogy, with an active silicon area of 100 μm by 120 μm. The back-annotated simulation results demonstrated the circuit features the systematic offset voltage less than 80 μV, the offset drift about 0.27 μV/℃ for temperature ranging from –30℃ to 100℃ and the total power dissipation consumed as low as 37.8 μW from a 1.8 V single supply. It dedicated to monitor low amplitude biomedical signals recording.展开更多
To response the demand for fine line in electronic products,additive manufacturing process integrated printing techniques and deposited methods to reach fine line circuit,with the merits of reduced material wastage,lo...To response the demand for fine line in electronic products,additive manufacturing process integrated printing techniques and deposited methods to reach fine line circuit,with the merits of reduced material wastage,low fabrication costs,and mass production advantage capability.Recently,we have developed additive process in fabricating circuit on flexible substrate through catalyst induced copper electroless deposition(ELD)method.The additive processes that integrated printing,activation,and metallization were applied to produce fine-line circuit with 5μm line width.The sample with ultraviolet(UV)activation shows better conductive property in comparison with the sample without activation after electroless deposited process.Accordingly,the results indicated that the reaction of catalyst induced electroless copper plating strongly depends on UV activation.The fine-line circuit exhibits a narrow line width circuit(around 5μm),lower resistance(6.2μΩ·cm),and mass production with low pollution in comparison with lithographic processes(with photoresist and acid pollution)with a high throughput system(R2R system)for the applications of double side flexible printed circuit board(FPCB).展开更多
阐述基于180nm CMOS工艺的一种用于传感器AFE(Analog Front End, AFE)的低噪声恒定带宽PGA电路设计,其1~4级为可选接入级,采用基于全差分放大器的低噪声开环结构。最后一级为推挽输出的增益精调级,采用基于跨导-跨阻闭环反馈型结构。芯...阐述基于180nm CMOS工艺的一种用于传感器AFE(Analog Front End, AFE)的低噪声恒定带宽PGA电路设计,其1~4级为可选接入级,采用基于全差分放大器的低噪声开环结构。最后一级为推挽输出的增益精调级,采用基于跨导-跨阻闭环反馈型结构。芯片测试结果表明,该PGA的增益范围为0~66.7dB,步进为1dB;在1.8V供电电压下,功耗为1.01mW;等效输入噪声为3.9μ VRMS(1~100kHz积分)。此外,由于最后一级采用跨导-跨阻结构,该PGA的增益曲线还具有恒定带宽的显著优势。展开更多
介绍了一种用于个人γ剂量测量的微型硅探测器的信号处理电路的设计,讨论了PCB(印制电路板)设计中应注意的问题。该信号处理电路主要包括前置放大电路、滤波成形电路和极-零相消电路,前置放大电路采用了电荷灵敏前置放大器,滤波成形电...介绍了一种用于个人γ剂量测量的微型硅探测器的信号处理电路的设计,讨论了PCB(印制电路板)设计中应注意的问题。该信号处理电路主要包括前置放大电路、滤波成形电路和极-零相消电路,前置放大电路采用了电荷灵敏前置放大器,滤波成形电路采用了CR-RC滤波成形网络。设计的信号处理电路PCB面积仅有10 cm2,对于0.662 Me V的γ射线,信号处理电路的输出信号的信噪比达到了50:1,输出脉冲幅度达到了1.5 V左右,输出信号之后没有明显的下冲现象,其性能可以满足用于个人剂量测量的要求。展开更多
文摘The structure of the extended gate ion sensitive field effect transistor (EGISFET) is similar to the structure of the ion sensitive field effect transistor (ISFET).Moreover,the non-ideal effect of EGISFET is the main impediment to development of commercial processes for sensitive devices.It is necessary to promote the stability and reliability of the devices by employing calibration circuits and the better fabrication conditions.The temporal drift exists in the entire measurement experiment. Furthermore,in this study we can reduce the temporal drift effect which influences the stability of the TiN sensitive electrode with the differential front-end offset circuit.The measurement system combines with shifting circuit,differential and instrument amplifiers.We employ the calibration circuit to compare with the variations of the output voltage,and expectably improve the stability and reliability of the TiN sensitive electrode by the novel calibration circuit.
文摘A compacted and low-offset low-power CMOS am- plifier for biosensor application is presented in this paper. It includes a low offset Op-Amp and a high precision current reference. With a novel continuous-time DC offset rejection scheme, the IC achieves lower offset voltage and lower power consumption compared to previous designs. This configuration rejects large DC offset and drift that exist at the skin-electrode interface without the need of external components. The proposed amplifier has been implemented in SMIC 0.18-μm 1P6M CMOS technol-ogy, with an active silicon area of 100 μm by 120 μm. The back-annotated simulation results demonstrated the circuit features the systematic offset voltage less than 80 μV, the offset drift about 0.27 μV/℃ for temperature ranging from –30℃ to 100℃ and the total power dissipation consumed as low as 37.8 μW from a 1.8 V single supply. It dedicated to monitor low amplitude biomedical signals recording.
基金the ministry of economic affairs in Taiwan under the contract number:J353J11100,is gratefully acknowledged.
文摘To response the demand for fine line in electronic products,additive manufacturing process integrated printing techniques and deposited methods to reach fine line circuit,with the merits of reduced material wastage,low fabrication costs,and mass production advantage capability.Recently,we have developed additive process in fabricating circuit on flexible substrate through catalyst induced copper electroless deposition(ELD)method.The additive processes that integrated printing,activation,and metallization were applied to produce fine-line circuit with 5μm line width.The sample with ultraviolet(UV)activation shows better conductive property in comparison with the sample without activation after electroless deposited process.Accordingly,the results indicated that the reaction of catalyst induced electroless copper plating strongly depends on UV activation.The fine-line circuit exhibits a narrow line width circuit(around 5μm),lower resistance(6.2μΩ·cm),and mass production with low pollution in comparison with lithographic processes(with photoresist and acid pollution)with a high throughput system(R2R system)for the applications of double side flexible printed circuit board(FPCB).
文摘介绍了一种用于个人γ剂量测量的微型硅探测器的信号处理电路的设计,讨论了PCB(印制电路板)设计中应注意的问题。该信号处理电路主要包括前置放大电路、滤波成形电路和极-零相消电路,前置放大电路采用了电荷灵敏前置放大器,滤波成形电路采用了CR-RC滤波成形网络。设计的信号处理电路PCB面积仅有10 cm2,对于0.662 Me V的γ射线,信号处理电路的输出信号的信噪比达到了50:1,输出脉冲幅度达到了1.5 V左右,输出信号之后没有明显的下冲现象,其性能可以满足用于个人剂量测量的要求。
