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Prediction of the Interface Temperature Rise in Tribochemical Polishing of CVD Diamond 被引量:3
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作者 Zewei YUAN Yan HE +2 位作者 Zhuji JIN Peng ZHENG Qiang LI 《Chinese Journal of Mechanical Engineering》 SCIE EI CAS CSCD 2017年第2期310-320,共11页
Tribochemcial polishing is one of the most efficient methods for polishing CVD (Chemical Vapor Deposition) diamond film due to the use of catalytic metal. However the difficulty to control the interface temperature ... Tribochemcial polishing is one of the most efficient methods for polishing CVD (Chemical Vapor Deposition) diamond film due to the use of catalytic metal. However the difficulty to control the interface temperature during polishing process often results in low material removal because of the unstable contact process. So this research investigates the contact process in the tribo- chemical polishing of CVD diamond film and proposes a dynamic contact model for predicting the actual contact area, the actual contact pressure, and the interface tem- perature in the polishing process. This model has been verified by characterizing surface metrology of the CVD diamond with Talysurf CLI2000 3D Surface Topography and measuring the polishing temperature. The theoretical and experimental results shows that the height distribution of asperities on diamond film surface in the polishing process is well evaluated by combining the height distribution of original and polished asperities. The modeled surface asperity height distribution of diamond film agrees with the actual surface metrology in polishing process. The actual contact pressure is very large due to the small actual contact area. The predicted interface temperature can reach the catalytic reaction temperature between diamond and polishing plate when the lowest rotation speed and load are 10 000 r/min and 50 N, respectively, and diamond material is significantly removed. The model may provide effective process theory for tribochemcial polishing. 展开更多
关键词 CVD diamond · Tribochemical polishing · Interface temperature · Prediction
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