Negative-Resistance Characteristics Analysis of Poly-Silicon Resistors Formed on the Flow Sensor

In this paper we put forward a new concept about effective trapping center concentration N^e_T which is decreasing with the trapped charge Q corresponding to index movement,based on that,we discuss theⅠ-Ⅴand temperature characteristics of polysilicon resistors.The new concept presents ideal theoretical interpretion for the originally observed current-voltage negative-resistance characteristics of polysilicon resistors formed on the flow sensor,and also for poly-silicon film resistors. The final results agree well with the theoretical current-voltage characteristics.

Simulation of high conversion efficiency and open-circuit voltages of α-si/poly-silicon solar cell

The P+ α-Si /N+ polycrystalline solar cell is molded using the AMPS-1D device simulator to explore the new high efficiency thin film poly-silicon solar cell. In order to analyze the characteristics of this device and the thickness of N+ poly-silicon, we consider the impurity concentration in the N+ poly-silicon layer and the work function of transparent conductive oxide (TCO) in front contact in the calculation. The thickness of N+ poly-silicon has little impact on the device when the thickness varies from 20 μm to 300 μm. The effects of impurity concentration in polycrystalline are analyzed. The conclusion is drawn that the open-circuit voltage (Voc) of P+ α-Si /N+ polycrystalline solar cell is very high, reaching 752 mV, and the conversion efficiency reaches 9.44%. Therefore, based on the above optimum parameters the study on the device formed by P+ α-Si/N+ poly-silicon is significant in exploring the high efficiency poly-silicon solar cell.

High efficiency grating couplers based on shared process with CMOS MOSFETs

Grating couplers are widely investigated as coupling interfaces between silicon-on-insulator waveguides and optical fibers.In this work,a high-efficiency and complementary metal-oxide-semiconductor（CMOS） process compatible grating coupler is proposed.The poly-Si layer used as a gate in the CMOS metal-oxide-semiconductor field effect transistor（MOSFET） is combined with a normal fully etched grating coupler,which greatly enhances its coupling efficiency.With optimal structure parameters,a coupling efficiency can reach as high as ～ 70% at a wavelength of 1550 nm as indicated by simulation.From the angle of fabrication,all masks and etching steps are shared between MOSFETs and grating couplers,thereby making the high performance grating couplers easily integrated with CMOS circuits.Fabrication errors such as alignment shift are also simulated,showing that the device is quite tolerant in fabrication.

A low temperature processed Si-quantum-dot poly-Si TFT nonvolatile memory device

This paper reports on a successful demonstration of poly-Si TFT nonvolatile memory with a much reduced thermal-budget.The TFT uses uniform Si quantum-dots（size -10 nm and density -10-（11） cm-（-2）） as storage media,obtained via LPCVD by flashing SiH4/H2 at 580℃for 15 s on a Si3N4 surface.The poly-Si grain-enlargement step was shifted after source/drain formation.The NiSix-silicided source/drain enables a fast lateral-recrystallization,and thus grain-enlargement can be accomplished by a much reduced thermal-cycle（i.e., 550℃/4 h）.The excellent memory characteristics suggest that the proposed poly-Si TFT Si quantum-dot memory and associated processes are promising for use in wider TFT applications,such as system-on-glass.

H-plasma-assisted aluminum induced crystallization of amorphous silicon

A technique to improve and accelerate aluminum induced crystallization（AIC） by using hydrogen plasma is proposed.Raman spectroscopy and secondary ion mass spectrometry of crystallized poly-Si thin films show that hydrogen plasma radicals reduce the crystallization time of AIC.This technique shortens the annealing time from 10 to 4 h and increases the Hall mobility from 22.1 to 42.5 cm^2/（V·s）.The possible mechanism of AIC assisted by hydrogen radicals is also discussed.