Preparation and study on performance of submicron nickel powder for multilayer chip positive temperature coefficient resistance

Base metal nickel is often used as the inner electrode in multilayer chip positive temperature coefficient resistance （PTCR）. The fine grain of ceramic powders and base metal nickel are necessary. This paper uses reducing hydrazine to gain submicron nickel powder whose diameter was 200-300 nm through adjusting the consumption of nucleating agent PVP properly. The submicron nickel powder could disperse well and was fit for co--fired of multilayer chip PTCR. It analyes the submicron nickel powder through x-ray Diffraction （XRD） and calculates the diameter of nickel by PDF cards. Using XRD analyses it obtains several conclusions： If the molar ratio of hydrazine hydrate and nickel sulfate is kept to be a constant, when enlarging the molar ratio of NaOH/Ni^2＋, the diameter of nickel powder would become smaller. When the temperature in the experiment raises to 70-80 ℃, nickel powder becomes smaller too. And if the molar ratio of NaOH/Ni2＋ is 4, when molar ratio of （C2H5O）2/Ni^2＋ increases, the diameter of nickel would reduce. Results from viewing the powders by optical microscope should be the fact that the electrode made by submicron nickel powder has a better formation and compactness. Furthermore, the sheet resistance testing shows that the electrode made by submicron nickel is smaller than that made by micron nickel.

Characterization of the BaBiO_3-doped BaTiO_3 positive temperature coefficient of a resistivity ceramic using impedance spectroscopy with T_c=155℃

BaBiO3-doped BaTiO3 （BB-BT） ceramic, as a candidate for lead-free positive temperature coefficient of resistivity （PTCR） materials with a higher Curie temperature, has been synthesized in air by a conventional sintering technique. The temperature dependence of resistivity shows that the phase transition of the PTC thermistor ceramic occurs at the Curie temperature, Tc = 155℃, which is higher than that of BaTiO3 （≤ 130 ℃）. Analysis of ac impedance data using complex impedance spectroscopy gives the alternate current （AC） resistance of the PTCR ceramic. By additional use of the complex electric modulus formalism to analyse the same data, the inhomogeneous nature of the ceramic may be unveiled. The impedance spectra reveal that the grain resistance of the BB-BT sample is slightly influenced by the increase of temperature, indicating that the increase in overall resistivity is entirely due to a grain-boundary effect. Based on the dependence of the extent to which the peaks of the imaginary part of electric modulus and impedance are matched on frequency, the conduction mechanism is also discussed for a BB-BT ceramic system.

Positive temperature coefficient of resistivity effects of semiconducting (Bi(1/2)Na(1/2)) TiO_3-CaTiO_3-BaTiO_3 ceramics sintered in air atmosphere

Y^3＋-doped （Bi 1/2 Na 1/2） TiO 3-CaTiO 3-BaTiO 3 （BNCBT） positive temperature coefficient of resistivity （PTCR） ceramics sintered in air atmosphere were investigated in this study. （Bi 1/2 Na 1/2） TiO 3 （BNT） component can remarkably increase the onset temperature T c of PTCR ceramics with the expense of the resistivity R 25 increase. CaTiO 3 （9–27 mol%） component can decrease the resistivity, and adjust the effects of BNT phase on the T c point. For the sample containing 3 mol% CaTiO 3 , T c raises from 122 ℃ to 153 ℃ when only 0.6 mol% BNT added, while for the ones with higher CaTiO 3 content （9–27 mol%）, T c is only increased by a rate of 8–9℃/1.0 mol% BNT. The effects of BNT and CaTiO 3 components on R25/Rmin （negative temperature coefficient effect） are also discussed.

A novel Na_(1−x)K_(x)TaO_(3)perovskite microwave dielectric ceramic with high permittivity and high positive temperature coefficient

A novel Na_(1−x)K_(x)TaO_(3)(x=0,0.025,0.05,0.075,0.1,and 0.15)ceramic with high permittivity and high positive temperature coefficient was synthesized via the conventional solid-state method.All samples were determined to be pure phase orthorhombic NaTaO3 structure of space group Pmcn,and larger grain and lower porosity were observed after adding an appropriate amount of K+ions.The Q×f value is majored by the packing fraction and grain size,while the value ofτf is influenced by Ta–O bond valence.The Na_(0.95)K_(0.05)TaO_(3) ceramic possesses excellent dielectric properties ofεr=164.29,Q×f=9091 GHz(f=3.15 GHz),tanδ=3.46×10^(–4),τf=+809.52 ppm/℃,sintered at 1550℃.Compared with NaTaO_(3) ceramics,the Na_(1−x)K_(x)TaO_(3)ceramics prepared in this study demonstrate higher dielectric constants and higher positive temperature coefficients,which are promising for device miniaturization andτf compensators.

Studies on preparation and thermal control behavior of hybrid fillers/binary-polymer composites with positive temperature coefficient characteristic

Conductive polymer composites(CPCs) as the thermo-sensitive materials have attracted much attention in thermal control field due to their reliable self-regulating behaviors, high efficiency and mechanical flexibility. However, the development of these materials needs to manage the normal conflicting requirements, such as effective heating performance and good self-regulating capability. This paper presents a series of novel CPCs material having different amounts of hybrid fillers of multi-walled carbon nanotubes(CNTs) and carbon black(CB). The positive temperature coefficient intensity is enhanced to 105.2, and the roomtemperature resistivity is optimized to 320 ? cm. Besides, the Curie temperatures are regulated to room-temperature range by incorporating the low-melting-point blend matrix into the poly(ethylene-co-vinyl acetate)/CNTs/CB composite. The thermalcontrol experiment demonstrates that CPCs-heating elements can adjust the equilibrium temperature of controlled equipment near their Curie temperatures without any control methods. Compared with the ordinary resistor, the CPCs materials have the remarkable adaptive thermal control behavior. Furthermore, the temperature control capability is particularly prominent in the changing environment temperature. The CPCs as a safe and reliable adaptive heating element is potential to replace the conventional active thermal control means.

Enhanced Reproducibility of Positive Temperature Coefficient Effect of CB/HDPE/PVDF Composites with the Addition of Ionic Liquid

Developing an effective method for improving the reproducibility of positive temperature coefficient(PTC)effect is of great significance for large-scale application of polymer based PTC composites,owing to its contribution to the security and reliability.Herein,we developed a carbon black(CB)/high density polyethylene(HDPE)/poly(vinylidene fluoride)(PVDF)composite with outstanding PTC reproducibility,by incorporating 1-octyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide([OMIm][NTf2])into the composite.After multiple repeated temperature cycles,the PTC performance of as-prepared material keeps almost unchanged and the varition of resistance at room temperature is less than 7%.Our studies revealed that[OMIm][NTf2]contributes to the improvement of PTC reproducibility in two ways:(i)it acts as an efficient plasticizer for refining the co-continuous phase morphology of HDPE/PVDE blends;(ii)it inhibits the crystallization of PVDF through the dilution effect,leading to more overlaps of the volume shrinkage process of HDPE and PVDF melt which results in the decrease of interface gap between HDPE and PVDF.This study demonstrated that ionic liquids as the multifunctional agents have great potential for improving the reproducibility in the application of the binary polymer based PTC composites.

Energy distribution extraction of negative charges responsible for positive bias temperature instability

A new method is proposed to extract the energy distribution of negative charges, which results from electron trapping by traps in the gate stack of n MOSFET during positive bias temperature instability（PBTI） stress based on the recovery measurement. In our case, the extracted energy distribution of negative charges shows an obvious dependence on energy,and the energy level of the largest energy density of negative charges is 0.01 eV above the conduction band of silicon. The charge energy distribution below that energy level shows strong dependence on the stress voltage.

Positive Bias Temperature Instability and Hot Carrier Injection of Back Gate Ultra-thin-body In0.53Ga0.47As-on-Insulator n-Channel Metal-Oxide-Semiconductor Field-Effect Transistor

Ultra-thin-body （UTB） In0.53Ga0.47As-on-insulator （In0.53Ga0.47As-OI） structures with thicknesses of 8 and 15nm are realized by transferring epitaxially grown In0.53Ga0.47As layers to silicon substrates with 15-nmthick A12 03 as a buried oxide by using the direct wafer bonding method. Back gate n-channel metal-oxidesemiconductor field-effect transistors （nMOSFETs） are fabricated by using these In0.53Ga0.47As-OI structures with excellent electrical characteristics. Positive bias temperature instability （PBTI） and hot carrier injection （HCI） characterizations are performed for the In0.53Ga0.47As-OI nMOSFETs. It is confirmed that the In0.53Ga0.47 As-OI nMOSFETs with a thinner body thickness suffer from more severe degradations under both PBTI and HCr stresses. Moreover, the different evolutions of the threshold voltage and the saturation current of the UTB In0.53Ga0.47As-OI nMOSFETs may be due to the slow border traps.

Influence of ultra-thin TiN thickness(1.4 nm and 2.4 nm) on positive bias temperature instability(PBTI)of high-k/metal gate nMOSFETs with gate-last process

The positive bias temperature instability（PBTI） degradations of high-k/metal gate（HK/MG） n MOSFETs with thin TiN capping layers（1.4 nm and 2.4 nm） are systemically investigated. In this paper, the trap energy distribution in gate stack during PBTI stress is extracted by using ramped recovery stress, and the temperature dependences of PBTI（90℃,125℃, 160℃） are studied and activation energy（Ea） values（0.13 eV and 0.15 eV） are extracted. Although the equivalent oxide thickness（EOT） values of two TiN thickness values are almost similar（0.85 nm and 0.87 nm）, the 2.4-nm TiN one（thicker Ti N capping layer） shows better PBTI reliability（13.41% at 0.9 V, 90℃, 1000 s）. This is due to the better interfacial layer/high-k（IL/HK） interface, and HK bulk states exhibited through extracting activation energy and trap energy distribution in the high-k layer.

Positive Bias Temperature Instability Degradation of Buried InGaAs Channel nMOSFETs with InGaP Barrier Layer and Al2O3 Dielectric

Positive bias temperature instability stress induced interface trap density in a buried InGaAs channel metaloxide-semiconductor field-effect transistor with a InCaP barrier layer and Al2O3 dielectric is investigated. Well behaved split C-V characteristics with small capacitance frequency dispersion are confirmed after the insertion of the InCaP barrier layer. The direct-current Id-Vg measurements show both degradations of positive gate voltage shift and sub-threshold swing in the sub-threshold region, and degradation of positive △Vg in the oncurrent region. The Id-Vg degradation during the positive bias temperature instability tests is mainly contributed by the generation of near interface acceptor traps under stress. Specifically, the stress induced aeceptor traps contain both permanent and recoverable traps. Compared with surface channel InCaAs devices, stress induced recoverable donor traps are negligible in the buried channel ones.

Resistivity-temperature Characteristics of Conductive Asphalt Concrete

The changes of resistivity of conductive asphalt concrete at different temperatures were studied,and positive temperature coefficient（PTC）modelwas established to estimate the influence of temperature on the resistivity quantitatively,which eliminated the interference with conductivity evaluation brought by temperature variation.Finally,the analysis of temperature cycling test results proves that the changes of percolation network structure caused by temperature variation prompt the emergence of PTC of conductive asphalt concrete.

PTC/NTC Behavior of PVDF Composites Filled with GF and CF

Conductive polyvinylidene fluoride（PVDF）matrix composites filled with graphited fiber（GF）or carbon fiber（CF）were prepared by the melt-mixing method.The breakage and length distribution of the fibers in the polymer matrix were studied by scanning electron microscope（SEM）and optical microscope（OM）observations,respectively. The differences in the positive temperature coefficient（PTC）effects of the composites were mainly attributed to inter-fiber contact ability.The elimination of the negative temperature coefficient（NTC）effect for CF/PVDF composite was because of an increase in the viscosity of the polymer matrix.With the same filler content,CF could be more effective,to eliminate the NTC effect when compared with GF.Addition of 2%CF（mass fraction）in the PVDF composite with 7%GF（mass fraction）could effectively eliminate the NTC phenomenon of the composite.

Influence of sintering schedule on the electrical properties of Mn(NO_3)_2-doped Ba_(0.92)Ca_(0.08)TiO_3 PTCR ceramics

The relationship of electrical properties of Mn-doped Ba_(0.92)Ca_(0.08)TiO_3PTCR (positive temperature coefficient resistance) ceramics with two sintering schedules wasdiscussed. Using TEM (transmission electron microscope) combined with EDS (energy dispersive X-rayspectrometer), the Mn ions distributed at grain boundaries were analyzed. The results show that thePTCR effect of Mn-doped PTCR ceramics is more dependent on the sintering schedule than those of Mnfree. The phenomenon may be caused by the valence states variance of Mn ions segregated at the grainboundaries.

A dual-gate and dielectric-inserted lateral trench insulated gate bipolar transistor on a silicon-on-insulator substrate

In this paper, a novel dual-gate and dielectric-inserted lateral trench insulated gate bipolar transistor （DGDI LTIGBT） structure, which features a double extended trench gate and a dielectric inserted in the drift region, is proposed and discussed. The device can not only decrease the specific on-resistance Ron,sp , but also simultaneously improve the temperature performance. Simulation results show that the proposed LTIGBT achieves an ultra-low on-state voltage drop of 1.31 V at 700 A·cm-2 with a small half-cell pitch of 10.5 μm, a specific on-resistance R on,sp of 187 mΩ·mm2, and a high breakdown voltage of 250 V. The on-state voltage drop of the DGDI LTIGBT is 18% less than that of the DI LTIGBT and 30.3% less than that of the conventional LTIGBT. The proposed LTIGBT exhibits a good positive temperature coefficient for safety paralleling to handling larger currents and enhances the short-circuit capability while maintaining a low self-heating effect. Furthermore, it also shows a better tradeoff between the specific on-resistance and the turnoff loss, although it has a longer turnoff delay time.

Dispersion of Polyacenic Semiconductor(PAS) in Polyethylene: Molecular Dynamics Simulation

The dispersing process of polyacenic semiconductor(PAS) in polyethylene(PE) was simulated by using molecular dynamics(MD) methods. The results show that this process can be divided into three stages. In the first stage, PAS particles in the crystal region of PE are expelled to the amorphous region; in the second stage, PAS particles aggregate due to small surface areas and PE chains are adjusted continuously, which makes the crystal region complete; PAS particles are separated from each other and the total energy increases in the third stage. During the whole dispersing process, PAS particles are more stable in the amorphous region than in the crystal region. All the simulation results are in good agreement with the experimental results.

Conductive Behaviors of Carbon Nanofibers Reinforced Epoxy Composites

By means of ultrasonic dispersion, carbon nanofibers reinforced epoxy resin composite was prepared in the lab, the electrical conductivity of composite with different carbon nanofibers loadings were studied, also the voltage-current relationship, resistance-temperature properties and mechano-electric effect were investigated. Results show that the resistivity of composite decreases in geometric progression with the increasing of carbon nanofibers, and the threshold ranges between 0.1 wt%-0.2 wt%. The voltage-current relationship is in good conformity with the Ohm＇s law, both positive temperature coefficient and negative temperature coefficient can be found at elevated temperature. In the course of stretching, the electrical resistance of the composites increases with the stress steadily and changes sharply near the breaking point, which is of importance for the safety monitor and structure health diagnosis.

Degradation characteristics and mechanism of PMOSFETs under NBT-PBT-NBT stress

Degradation characteristics of PMOSFETs under negative bias temperature-positive bias temperature-negative bias temperature （NBT-PBT-NBT） stress conditions are investigated in this paper. It is found that for all device parameters, the threshold voltage has the largest shift under the first NBT stress condition. When the polarity of gate voltage is changed to positive, the shift of device parameters can be greatly recovered. However, this recovery is unstable. The more severe degradation appears soon after reapplication of NBT stress condition. The second NBT stress causes in linear drain current to degrade greatly, which is different from that of the first NBT stress. This more severe parameter shift results from the wear out of silicon substrate and oxide interface during the first NBT and PBT stress due to carrier trapping/detrapping and hydrogen related species diffusion.

Impacts of NBTI/PBTI on power gated SRAM

A signal probability and activity probability (SPAP) model was proposed firstly, to estimate the impacts of the negative bias temperature instability (NBTI) and positive bias temperature instability (PBTI) on power gated static random access memory (SRAM). The experiment results show that PBTI has significant influence on the read and write operations of SRAM with power gating, and it deteriorates the NBTI effects and results in a up to 39.38% static noise margin reduction and a 35.7% write margin degradation together with NBTI after 106 s working time. Then, a circuit level simulation was used to verify the assumption of the SPAP model, and finally the statistic data of CPU2000 benchmarks show that the proposed model has a reduction of 3.85% for estimation of the SNM degradation after 106 s working time compared with previous work.

Characterization of positive bias temperature instability of NMOSFET with high-k/metal gate last process

Positive bias temperature instability（PBTI） characteristics and degradation mechanisms of NMOSFET with high-k/metal gate last process have been systematically investigated. The time evolution of threshold voltage shift during PBTI stress still follows a power law. However, the exponent n decreases from 0.26 to 0.16 linearly as the gate stress voltage increases from 0.6 to 1.2 V. There is no interface state generation during stress because of the negligible sub-threshold swing change. Moreover, the activation energy is 0.1 e V, which implies that electrons directly tunnel into high-k bulk and are trapped by pre-existing traps resulting into PBTI degradation. During recovery the threshold voltage shift is linear in lgt, and a mathematical model is proposed to express threshold voltage shift.

Analysis of thermal-mechanical coupled characteristics of vehicle twin-tube shock absorber

A comprehensive model that included mechanical dynamics of the shock absorber coupled with its thermal properties was proposed innovatively.Moreover a thermal-mechanical coupled model which reflected the closed-loop positive feedback system was established by using MATLAB/SIMULINK,and some curves of shock absorber temperature rising characteristic were obtained by simulation ＆computation under several operating modes and different parameters conditions.Research results show that：shock absorber design parameters,external excitations,and thermo-physical properties parameter,such as oil density have effect on the shock absorber temperature rising characteristic.However other thermo-physical properties parameters,such as oil specific heat,cylinder density,cylinder specific heat,and cylinder thermal conductivity,have no effect on it.The results may be used for studying reliability design of the shock absorber.