Buck converter stability techniques for secondary filters and adaptive voltage positioning

To reduce output voltage noise and improve dynamic response performance,this study designed a buck converter on the basis of secondary filters and adaptive voltage positioning(AVP).A hybrid control method was proposed for the compensation of the secondary filter.The introduction of a high-frequency feedback path,in addition to the traditional feedback path,effectively improved the influence of the secondary filter on the loop stability and direct current regulation performance.A small-signal model of the buck converter based on the proposed control method was derived,and the stability and selection of control parameters were analyzed.AVP is realized using an easy-to-implement and low-cost control method that was proposed to improve dynamic response performance by changing the low-frequency gain of the control loop and load regulation of the output voltage.The experimental results of the buck converter showed that the proposed method effectively reduced the output voltage noise by 50%and improved the dynamic response capability to meet the target requirements of mainstream electronic systems.

Design of small-area and high-efficiency DC-DC converter for 1 T SRAM

The direct current-direct current （DC-DC） converter is designed for 1 T static random access memory （SRAM） used in display driver integrated circuits （ICs）, which consists of positive word-line voltage （VpwL）, negative word-line voltage （VinyL） and half-VDD voltage （VHDo） generator. To generate a process voltage temperature （PVT）-insensitive VpWL and VNWL, a set of circuits were proposed to generate reference voltages using bandgap reference current generators for respective voltage level detectors. Also, a VOWL regulator and a VNWL charge pump were proposed for a small-area and low-power design. The proposed VpwL regulator can provide a large driving current with a small area since it regulates an input voltage （VCI） from 2.5 to 3.3 V. The VmvL charge pump can be implemented as a high-efficiency circuit with a small area and low power since it can transfer pumped charges to VNWL node entirely. The DC-DC converter for 1 T SRAM were designed with 0.11 μm mixed signal process and operated well with satisfactory measurement results.

Power Quality Assessment of Voltage Positive Feedback Based Islanding Detection Algorithm

Islanding refers to a condition where distributed generators(DGs)inject power solely to the local load after electrical separation from power grid.Several islanding detection methods(IDMs)categorized into remote,active,and passive groups have been reported to detect this undesirable state.In active techniques,a disturbance is injected into the DG’s controller to drift a local yardstick out of the permissible range.Although this disturbance leads to more effective detections even in well-balanced island,it raises the total harmonic distortion(THD)of the output current under the normal operation conditions.This paper analyzes the power quality aspect of the modified sliding mode controller as a new active IDM for grid-connected photovoltaic system(GCPVS)with a string inverter.Its performance is compared with the voltage positive feedback(VPF)method,a well-known active IDM.This evaluation is carried out for a 1 k Wp GCPVS in MATLAB/Simulink platform by measuring the output current harmonics and THD as well as the efficiency under various penetration and disturbance levels.The output results demonstrate that since the proposed disturbance changes the amplitude of the output current,it does not generate harmonics/subharmonics.Thereby,it has a negligible adverse effect on power quality.It is finally concluded that the performance of the sliding mode-based IDM is reliable from the standpoints of islanding detection and power quality.

Inverse-time Backup Protection Based on Unified Characteristic Equation for Distribution Networks with High Proportion of Distributed Generations

The setting work of backup protection using steady-state current is tedious,and mismatches occasionally occur due to the increased proportion of distributed generations(DGs)connected to the power grid.Thus,there is a practical need to study a backup protection technology that does not require step-by-step setting and can be adaptively coordinated.This paper proposes an action sequence adaptive to fault positions that uses only positive sequence fault component(PSFC)voltage.Considering the influence of DGs,the unified time dial setting can be obtained by selecting specific points.The protection performance is improved by using the adjacent upstream and downstream protections to meet the coordination time interval in the case of metallic faults at the near-and far-ends of the line.Finally,the expression and implementation scheme for inverse-time backup protection(ITBP)based on the unified characteristic equation is given.Simulation results show that this scheme can adapt to DG penetration scenarios and can realize the adaptive coordination of multi-level relays.

Wide-range-adjusted threshold voltages for E-mode AlGaN/GaN HEMT with a p-SnO cap gate

p-GaN cap layer has been recognized as a commercial technology to manufacture enhanced-mode(E-mode)AlGaN/GaN high electron mobility transistor(HEMT);however,the difficult activation of Mg doping and etching damage of p-GaN limit the further improvement of device performance.Thus,the more cost-effective cap layer has attracted wide attention in GaN-based HEMT.In this paper,p-type tin monoxide(p-SnO)was firstly investigated as a gate cap to realize E-mode AlGaN/GaN HEMT by both Silvaco simulation and experiment.Simulation results show that by simply adjusting the thickness(50 to 200 nm)or the doping concentration(3×10^(17)to 3×10^(18)cm^(-3))of p-SnO,the threshold voltage(V_(th))of HEMT can be continuously adjusted in the range from zero to 10 V.Simultaneously,the device demonstrated a drain current density above 120 mA mm^(-1),a gate breakdown voltage(V_(BG))of 7.5 V and a device breakdown voltage(V_(B))of 2470 V.What is more,the etching-free AlGaN/GaN HEMT with sputtered p-SnO gate cap were fabricated,and achieved a positive V_(th) of 1 V,V_(BG) of 4.2 V and V_(B) of 420 V,which confirms the application potential of the p-SnO film as a gate cap layer for E-mode GaN-based HEMT.This work is instructive to the design and manufacture of p-oxide gate cap E-mode AlGaN/GaN HEMT with low cost.

Characterization of Electric Field Distribution Within High Voltage Press-packed IGBT Submodules Under Conditions of Repetitive Turn-on and Turn-off

The high-voltage high-power press-packed IGBT(PPI)devices are the key component of the DC transmission apparatus.A PPI device is composed of several PPI submodules.In general,the PPI submodule works in a state of repetitive turn-on and turn-off,and the corresponding working voltage is the positive periodic square waveform(PPSW)voltage,which is much different from the conventional AC or DC voltage.In addition,insulation capability is one of the most critical challenges in the design and fabrication of PPI devices.To improve the insulation capability of the device,composite insulation structures with multiple dielectrics are usually employed.Under the PPSW voltage,it is essential to analyze the transient electric field to solve the insulation challenge of the PPI devices.However,the electric field of the PPI is often calculated under the electrostatic field or DC field.Moreover,the transient characteristics of the electric field are ignored.Therefore,this paper focuses on the analysis of the transient characteristics of the electric field of the PPI submodule under the PPSW voltage.The influences of the waveform parameters of the PPSW voltage on the transient characteristics are demonstrated in detail.This study is significant for the insulation analysis and design of the PPIs.