Predictive potential distribution modeling is of increasing importance in modern herpetological studies and determination of environmental and conservation priorities. In this article we provided results of analysis a...Predictive potential distribution modeling is of increasing importance in modern herpetological studies and determination of environmental and conservation priorities. In this article we provided results of analysis and forecasts of the potential distribution of smallscaled rock agama Paralaudakia microlepis （Blanford, 1874） using the distribution models through Maxent （www.cs.princeton.edu/- schapire / maxent）. We made an attempt for comparison of input of bioclimatic factors and characteristics of biotope distribution for three species of genus Paralaudalda. Constructed model identified dissemination of Paralaudakia microlepis enough performance （AUC = 0.972 with dispersion 0.003）. According to the map constructed, the most suitable habitats of smallscaled rock agama Paralaudakia microlepis are located in southern and eastern Iran, the west of central Pakistan and southeastern Afghanistan.展开更多
A 2D model for the potential distribution in silicon film is derived for a symmetrical double gate MOS- FET in weak inversion. This 2D potential distribution model is used to analytically derive an expression for the ...A 2D model for the potential distribution in silicon film is derived for a symmetrical double gate MOS- FET in weak inversion. This 2D potential distribution model is used to analytically derive an expression for the subthreshold slope and threshold voltage. A drain current model for lightly doped symmetrical DG MOSFETs is then presented by considering weak and strong inversion regions including short channel effects, series source to drain resistance and channel length modulation parameters. These derived models are compared with the simulation results of the SILVACO （Atlas） tool for different channel lengths and silicon film thicknesses. Lastly, the effect of the fixed oxide charge on the drain current model has been studied through simulation. It is observed that the obtained analytical models of syrnmetrical double gate MOSFETs are in good agreement with the simulated results for a channel length to silicon film thickness ratio greater than or equal to 2.展开更多
基金partially supported by grants from the Russian Foundation for Basic Research to NBA (Project 12-04-00057)the Scientific School Support Program (NSh- 2990.2014)
文摘Predictive potential distribution modeling is of increasing importance in modern herpetological studies and determination of environmental and conservation priorities. In this article we provided results of analysis and forecasts of the potential distribution of smallscaled rock agama Paralaudakia microlepis （Blanford, 1874） using the distribution models through Maxent （www.cs.princeton.edu/- schapire / maxent）. We made an attempt for comparison of input of bioclimatic factors and characteristics of biotope distribution for three species of genus Paralaudalda. Constructed model identified dissemination of Paralaudakia microlepis enough performance （AUC = 0.972 with dispersion 0.003）. According to the map constructed, the most suitable habitats of smallscaled rock agama Paralaudakia microlepis are located in southern and eastern Iran, the west of central Pakistan and southeastern Afghanistan.
文摘A 2D model for the potential distribution in silicon film is derived for a symmetrical double gate MOS- FET in weak inversion. This 2D potential distribution model is used to analytically derive an expression for the subthreshold slope and threshold voltage. A drain current model for lightly doped symmetrical DG MOSFETs is then presented by considering weak and strong inversion regions including short channel effects, series source to drain resistance and channel length modulation parameters. These derived models are compared with the simulation results of the SILVACO （Atlas） tool for different channel lengths and silicon film thicknesses. Lastly, the effect of the fixed oxide charge on the drain current model has been studied through simulation. It is observed that the obtained analytical models of syrnmetrical double gate MOSFETs are in good agreement with the simulated results for a channel length to silicon film thickness ratio greater than or equal to 2.
