Aiming to meet the demand of the country＇ s nuclear demonstration project on the CAP1400 nuclear power plant, Baosteel uses the roll-bonding technology and develops the SA-533 Type B CL. 1 ＋ SA-240 Type 304L high-st...Aiming to meet the demand of the country＇ s nuclear demonstration project on the CAP1400 nuclear power plant, Baosteel uses the roll-bonding technology and develops the SA-533 Type B CL. 1 ＋ SA-240 Type 304L high-strength and high-toughness clad steel plate with a shear strength of over 310 MPa for the nuclear power plant＇ s safety injection tank. The properties of the quenched and tempered and the simulated post-weld heat treatment states are systematically studied herein through a comprehensive inspection and evaluation of the composition,microstructure,and properties of the clad steel plate. The results show that the bonding interface has high shear strength and that the base metal has high strength and good toughness at low temperatures. Hence, the performance fully meets the technical requirements of the CAP1400 nuclear power plant＇ s safety injection tank in the country＇ s nuclear demonstration project. The roll-bonded clad steel plate can be used to manufacture the safety injection tank of the CAP1400 nuclear power plant.展开更多
The rapid development of information technology has led to an urgent need for devices with fast information storage and processing, a high density, and low energy consumption. Memristors are considered to be next-gene...The rapid development of information technology has led to an urgent need for devices with fast information storage and processing, a high density, and low energy consumption. Memristors are considered to be next-generation memory devices with all of the aforementioned advantages. Recently, organometallic halide perovskites were reported to be promising active materials for memristors, although they have poor stability and mediocre performance. Herein, we report for the first time the fabrication of stable and high-performance memristors based on inorganic halide perovskite （CsPbBr3, CPB）. The devices have electric field-induced bipolar resistive switching （ReS） and memory behaviors with a large on/off ratio （〉105）, low working voltage （〈1 V） and energy consumption, long data retention （〉104 s）, and high environmental stability, which are achieved via ZnO capping within the devices. Such a design can be adapted to various devices. Additionally, the heterojunction between the CPB and ZnO endows the devices with a light-induced ReS effect of more than 103 with a rapid response speed （〈1 ms）, which enables us to tune the resistance state by changing the light and electric field simultaneously. Such multifunctional devices achieved by the combination of information storage and processing abilities have potential applications for future computing that transcends traditional architectures.展开更多
文摘Aiming to meet the demand of the country＇ s nuclear demonstration project on the CAP1400 nuclear power plant, Baosteel uses the roll-bonding technology and develops the SA-533 Type B CL. 1 ＋ SA-240 Type 304L high-strength and high-toughness clad steel plate with a shear strength of over 310 MPa for the nuclear power plant＇ s safety injection tank. The properties of the quenched and tempered and the simulated post-weld heat treatment states are systematically studied herein through a comprehensive inspection and evaluation of the composition,microstructure,and properties of the clad steel plate. The results show that the bonding interface has high shear strength and that the base metal has high strength and good toughness at low temperatures. Hence, the performance fully meets the technical requirements of the CAP1400 nuclear power plant＇ s safety injection tank in the country＇ s nuclear demonstration project. The roll-bonded clad steel plate can be used to manufacture the safety injection tank of the CAP1400 nuclear power plant.
文摘The rapid development of information technology has led to an urgent need for devices with fast information storage and processing, a high density, and low energy consumption. Memristors are considered to be next-generation memory devices with all of the aforementioned advantages. Recently, organometallic halide perovskites were reported to be promising active materials for memristors, although they have poor stability and mediocre performance. Herein, we report for the first time the fabrication of stable and high-performance memristors based on inorganic halide perovskite （CsPbBr3, CPB）. The devices have electric field-induced bipolar resistive switching （ReS） and memory behaviors with a large on/off ratio （〉105）, low working voltage （〈1 V） and energy consumption, long data retention （〉104 s）, and high environmental stability, which are achieved via ZnO capping within the devices. Such a design can be adapted to various devices. Additionally, the heterojunction between the CPB and ZnO endows the devices with a light-induced ReS effect of more than 103 with a rapid response speed （〈1 ms）, which enables us to tune the resistance state by changing the light and electric field simultaneously. Such multifunctional devices achieved by the combination of information storage and processing abilities have potential applications for future computing that transcends traditional architectures.
