Application of Power Electronics Converters in Renewable Energy

Against the backdrop of global energy shortages and increasingly severe environmental pollution,renewable energy is gradually becoming a significant direction for future energy development.Power electronics converters,as the core technology for energy conversion and control,play a crucial role in enhancing the efficiency and stability of renewable energy systems.This paper explores the basic principles and functions of power electronics converters and their specific applications in photovoltaic power generation,wind power generation,and energy storage systems.Additionally,it analyzes the current innovations in high-efficiency energy conversion,multilevel conversion technology,and the application of new materials and devices.By studying these technologies,the aim is to promote the widespread application of power electronics converters in renewable energy systems and provide theoretical and technical support for achieving sustainable energy development.

On-Chip Micro Temperature Controllers Based on Freestanding Thermoelectric Nano Films for Low-Power Electronics

Multidimensional integration and multifunctional com-ponent assembly have been greatly explored in recent years to extend Moore’s Law of modern microelectronics.However,this inevitably exac-erbates the inhomogeneity of temperature distribution in microsystems,making precise temperature control for electronic components extremely challenging.Herein,we report an on-chip micro temperature controller including a pair of thermoelectric legs with a total area of 50×50μm^(2),which are fabricated from dense and flat freestanding Bi2Te3-based ther-moelectric nano films deposited on a newly developed nano graphene oxide membrane substrate.Its tunable equivalent thermal resistance is controlled by electrical currents to achieve energy-efficient temperature control for low-power electronics.A large cooling temperature difference of 44.5 K at 380 K is achieved with a power consumption of only 445μW,resulting in an ultrahigh temperature control capability over 100 K mW^(-1).Moreover,an ultra-fast cooling rate exceeding 2000 K s^(-1) and excellent reliability of up to 1 million cycles are observed.Our proposed on-chip temperature controller is expected to enable further miniaturization and multifunctional integration on a single chip for microelectronics.

3D‑Printed Carbon‑Based Conformal Electromagnetic Interference Shielding Module for Integrated Electronics

Electromagnetic interference shielding(EMI SE)modules are the core com-ponent of modern electronics.However,the tra-ditional metal-based SE modules always take up indispensable three-dimensional space inside electronics,posing a major obstacle to the integra-tion of electronics.The innovation of integrating 3D-printed conformal shielding(c-SE)modules with packaging materials onto core electronics offers infinite possibilities to satisfy ideal SE func-tion without occupying additional space.Herein,the 3D printable carbon-based inks with various proportions of graphene and carbon nanotube nanoparticles are well-formulated by manipulating their rheological peculiarity.Accordingly,the free-constructed architectures with arbitrarily-customized structure and multifunctionality are created via 3D printing.In particular,the SE performance of 3D-printed frame is up to 61.4 dB,simultaneously accompanied with an ultralight architecture of 0.076 g cm^(-3) and a superhigh specific shielding of 802.4 dB cm3 g^(-1).Moreover,as a proof-of-concept,the 3D-printed c-SE module is in situ integrated into core electronics,successfully replacing the traditional metal-based module to afford multiple functions for electromagnetic compatibility and thermal dissipa-tion.Thus,this scientific innovation completely makes up the blank for assembling carbon-based c-SE modules and sheds a brilliant light on developing the next generation of high-performance shielding materials with arbitrarily-customized structure for integrated electronics.

11.2 W/mm power density AlGaN/GaN high electron-mobility transistors on a GaN substrate

In this letter,high power density AlGaN/GaN high electron-mobility transistors(HEMTs)on a freestanding GaN substrate are reported.An asymmetricΓ-shaped 500-nm gate with a field plate of 650 nm is introduced to improve microwave power performance.The breakdown voltage(BV)is increased to more than 200 V for the fabricated device with gate-to-source and gate-to-drain distances of 1.08 and 2.92μm.A record continuous-wave power density of 11.2 W/mm@10 GHz is realized with a drain bias of 70 V.The maximum oscillation frequency(f_(max))and unity current gain cut-off frequency(f_(t))of the AlGaN/GaN HEMTs exceed 30 and 20 GHz,respectively.The results demonstrate the potential of AlGaN/GaN HEMTs on freestanding GaN substrates for microwave power applications.

A Generic Strategy to Create Mechanically Interlocked Nanocomposite/Hydrogel Hybrid Electrodes for Epidermal Electronics

Stretchable electronics are crucial enablers for next-generation wearables intimately integrated into the human body.As the primary compliant conductors used in these devices,metallic nanostructure/elastomer composites often struggle to form conformal contact with the textured skin.Hybrid electrodes have been consequently developed based on conductive nanocomposite and soft hydrogels to establish seamless skin-device interfaces.However,chemical modifications are typically needed for reliable bonding,which can alter their original properties.To overcome this limitation,this study presents a facile fabrication approach for mechanically interlocked nanocomposite/hydrogel hybrid electrodes.In this physical process,soft microfoams are thermally laminated on silver nanowire nanocomposites as a porous interface,which forms an interpenetrating network with the hydrogel.The microfoam-enabled bonding strategy is generally compatible with various polymers.The resulting interlocked hybrids have a 28-fold improved interfacial toughness compared to directly stacked hybrids.These electrodes achieve firm attachment to the skin and low contact impedance using tissue-adhesive hydrogels.They have been successfully integrated into an epidermal sleeve to distinguish hand gestures by sensing mus-cle contractions.Interlocked nanocomposite/hydrogel hybrids reported here offer a promising platform to combine the benefits of both materials for epidermal devices and systems.

Advances in Wireless,Batteryless,Implantable Electronics for Real‑Time,Continuous Physiological Monitoring

This review summarizes recent progress in developing wireless,batteryless,fully implantable biomedical devices for real-time continuous physiological signal monitoring,focusing on advancing human health care.Design considerations,such as biological constraints,energy sourcing,and wireless communication,are discussed in achieving the desired performance of the devices and enhanced interface with human tissues.In addition,we review the recent achievements in materials used for developing implantable systems,emphasizing their importance in achieving multi-functionalities,biocompatibility,and hemocompatibility.The wireless,batteryless devices offer minimally invasive device insertion to the body,enabling portable health monitoring and advanced disease diagnosis.Lastly,we summarize the most recent practical applications of advanced implantable devices for human health care,highlighting their potential for immediate commercialization and clinical uses.

Rational Design of Cellulosic Triboelectric Materials for Self‑Powered Wearable Electronics

With the rapid development of the Internet of Things and flexible electronic technologies,there is a growing demand for wireless,sustainable,multifunctional,and independently operating self-powered wearable devices.Nevertheless,structural flexibility,long operating time,and wearing comfort have become key requirements for the widespread adoption of wearable electronics.Triboelectric nanogenerators as a distributed energy harvesting technology have great potential for application development in wearable sensing.Compared with rigid electronics,cellulosic self-powered wearable electronics have significant advantages in terms of flexibility,breathability,and functionality.In this paper,the research progress of advanced cellulosic triboelectric materials for self-powered wearable electronics is reviewed.The interfacial characteristics of cellulose are introduced from the top-down,bottom-up,and interfacial characteristics of the composite material preparation process.Meanwhile,the modulation strategies of triboelectric properties of cellulosic triboelectric materials are presented.Furthermore,the design strategies of triboelectric materials such as surface functionalization,interfacial structure design,and vacuum-assisted self-assembly are systematically discussed.In particular,cellulosic self-powered wearable electronics in the fields of human energy harvesting,tactile sensing,health monitoring,human–machine interaction,and intelligent fire warning are outlined in detail.Finally,the current challenges and future development directions of cellulosic triboelectric materials for self-powered wearable electronics are discussed.

Heterogeneous Cu_(x)O Nano‑Skeletons from Waste Electronics for Enhanced Glucose Detection

Electronic waste(e-waste)and diabetes are global challenges to modern societies.However,solving these two challenges together has been challenging until now.Herein,we propose a laser-induced transfer method to fabricate portable glucose sensors by recycling copper from e-waste.We bring up a laser-induced full-automatic fabrication method for synthesizing continuous heterogeneous Cu_(x)O(h-Cu_(x)O)nano-skeletons electrode for glucose sensing,offering rapid(<1 min),clean,air-compatible,and continuous fabrication,applicable to a wide range of Cu-containing substrates.Leveraging this approach,h-Cu_(x)O nanoskeletons,with an inner core predominantly composed of Cu_(2)O with lower oxygen content,juxtaposed with an outer layer rich in amorphous Cu_(x)O(a-Cu_(x)O)with higher oxygen content,are derived from discarded printed circuit boards.When employed in glucose detection,the h-Cu_(x)O nano-skeletons undergo a structural evolution process,transitioning into rigid Cu_(2)O@CuO nano-skeletons prompted by electrochemical activation.This transformation yields exceptional glucose-sensing performance(sensitivity:9.893 mA mM^(-1) cm^(-2);detection limit:0.34μM),outperforming most previously reported glucose sensors.Density functional theory analysis elucidates that the heterogeneous structure facilitates gluconolactone desorption.This glucose detection device has also been downsized to optimize its scalability and portability for convenient integration into people’s everyday lives.

Design and prototyping of the readout electronics for the transition radiation detector in the high energy cosmic radiation detection facility

The high energy cosmic-radiation detection(HERD)facility is planned to launch in 2027 and scheduled to be installed on the China Space Station.It serves as a dark matter particle detector,a cosmic ray instrument,and an observatory for high-energy gamma rays.A transition radiation detector placed on one of its lateral sides serves dual purpose,(ⅰ)calibrating HERD's electromagnetic calorimeter in the TeV energy range,and(ⅱ)serving as an independent detector for high-energy gamma rays.In this paper,the prototype readout electronics design of the transition radiation detector is demonstrated,which aims to accurately measure the charge of the anodes using the SAMPA application specific integrated circuit chip.The electronic performance of the prototype system is evaluated in terms of noise,linearity,and resolution.Through the presented design,each electronic channel can achieve a dynamic range of 0–100 fC,the RMS noise level not exceeding 0.15 fC,and the integral nonlinearity was<0.2%.To further verify the readout electronic performance,a joint test with the detector was carried out,and the results show that the prototype system can satisfy the requirements of the detector's scientific goals.

Amorphous BaTiO_(3) Electron Transport Layer for Thermal Equilibrium-Governed γ-CsPbl_(3) Perovskite Solar Cell with High Power Conversion Efficiency of 19.96%

Compared to organic-inorganic hybrid perovskites,the cesium-based allinorganic lead halide perovskite(CsPbI_(3))is a promising light absorber for perovskite solar cells owing to its higher resistance to thermal stress.Nonetheless,additional research is required to reduce the nonradiative recombination to realize the full potential of CsPbI_(3).Here,the diffusion of Cs ions participating in ion exchange is proposed to be an important factor responsible for the bulk defects inγ-CsPbI_(3)perovskite.Calculations based on first-principles density functional theory reveal that the[PbI_(6)]^(4-)octahedral tilt modifies the perovskite crystallographic properties inγ-CsPbI_(3),leading to alterations in its bandgap and crystal strain.In addition,by substituting amorphous barium titanium oxide(a-BaTiO_(3))for TiO_(2)as the electron transport layer,interfacial defects caused by imperfect energy levels between the electron transport layer and perovskite are reduced.High-resolution transmission electron microscopy and electron energy loss spectroscopy demonstrate that a-BaTiO_(3)forms entirely as a single phase,as opposed to Ba-doped TiO_(2)hybrid nanoclusters or separate domains of TiO_(2)and BaTiO_(3)phases.Accordingly,inorganic perovskite solar cells based on the a-BaTiO_(3)electron transport layer achieved a power conversion efficiency of 19.96%.

A comprehensive review on microchannel heat sinks for electronics cooling

The heat generation of electronic devices is increasing dramatically,which causes a serious bottleneck in the thermal management of electronics,and overheating will result in performance deterioration and even device damage.With the development of micro-machining technologies,the microchannel heat sink(MCHS)has become one of the best ways to remove the considerable amount of heat generated by high-power electronics.It has the advantages of large specific surface area,small size,coolant saving and high heat transfer coefficient.This paper comprehensively takes an overview of the research progress in MCHSs and generalizes the hotspots and bottlenecks of this area.The heat transfer mechanisms and performances of different channel structures,coolants,channel materials and some other influencing factors are reviewed.Additionally,this paper classifies the heat transfer enhancement technology and reviews the related studies on both the single-phase and phase-change flow and heat transfer.The comprehensive review is expected to provide a theoretical reference and technical guidance for further research and application of MCHSs in the future.

Preface to Special Issue on Towards High Performance Ga_(2)O_(3) Electronics: Epitaxial Growth and Power Devices(Ⅰ)

There is currently great optimism within the electronics community that gallium oxide(Ga_(2)O_(3)) ultra-wide bandgap semiconductors have unprecedented prospects for eventually revolutionizing a rich variety of power electronic applications. Specially, benefiting from its ultra-high bandgap of around 4.8 eV, it is expected that the emerging Ga_(2)O_(3) technology would offer an exciting platform to deliver massively enhanced device performance for power electronics and even completely new applications.

Recent advances in NiO/Ga_(2)O_(3) heterojunctions for power electronics

Beta gallium oxide(β-Ga_(2)O_(3)) has attracted significant attention for applications in power electronics due to its ultrawide bandgap of ~ 4.8 eV and the large critical electric field of 8 MV/cm. These properties yield a high Baliga's figures of merit(BFOM) of more than 3000. Though β-Ga_(2)O_(3) possesses superior material properties, the lack of p-type doping is the main obstacle that hinders the development of β-Ga_(2)O_(3)-based power devices for commercial use. Constructing heterojunctions by employing other p-type materials has been proven to be a feasible solution to this issue. Nickel oxide(NiO) is the most promising candidate due to its wide band gap of 3.6–4.0 eV. So far, remarkable progress has been made in NiO/β-Ga_(2)O_(3) heterojunction power devices. This review aims to summarize recent advances in the construction, characterization, and device performance of the NiO/β-Ga_(2)O_(3) heterojunction power devices. The crystallinity, band structure, and carrier transport property of the sputtered NiO/β-Ga_(2)O_(3) heterojunctions are discussed. Various device architectures, including the NiO/β-Ga_(2)O_(3) heterojunction pn diodes(HJDs), junction barrier Schottky(JBS) diodes, and junction field effect transistors(JFET), as well as the edge terminations and super-junctions based on the NiO/β-Ga_(2)O_(3) heterojunction, are described.

Research on Online Teaching and Offline Course Construction for Power Electronics

Due to the impact of the novel coronavirus outbreak,universities have adopted online teaching and carried out remote teaching.With the improvement of the epidemic and the approaching of the new school year,the organic connection between online teaching during the epidemic and offline course construction after the epidemic is not only a challenge for tertiary education teachers,but also an urgent issue to be addressed.Therefore,the power electronics course is taken as an example to explore this connection.

Vertical β-Ga_(2)O_(3) power electronics

β-Ga_(2)O_(3) possesses a highly promising critical electric field of 8 MV/cm,allowing devices with improved perfor-mance compared with other wide bandgap materials[1,2].The 4-inch wafers grown from a melt and over 10μm of the epitax-ial layers grown by Halide vapor phase epitaxy(HVPE)with highly controllable doping concentration,are commercially available,paving the way of vertical power devices.Theβ-Ga_(2)O_(3) community has consistently elevated the average criti-cal electric field superior to SiC or GaN,which is suitable for medium/high voltage infrastructures demanding over 900 V[1].Verticalβ-Ga_(2)O_(3) power electronics have made a tremendous progress in recent years,such as various surface/interface engineering,diverse edge termination,quasi-inversion vertical transistor,etc.

Integrated power electronics module based on chip scale packaged power devices

High performance can be obtained for the integrated power electronics module（IPEM） by using a three-dimensional packaging structure instead of a planar structure. A three- dimensional packaged half bridge-IPEM （HB-IPEM）, consisting of two chip scale packaged MOSFETs and the corresponding gate driver and protection circuits, is fabricated at the laboratory. The reliability of the IPEM is controlled from the shape design of solder joints and the control of assembly process parameters. The parasitic parameters are extracted using Agilent 4395A impedance analyzer for building the parasitic parameter model of the HB- IPEM. A 12 V/3 A output synchronous rectifier Buck converter using the HB-IPEM is built to test the electrical performance of the HB-IPEM. Low voltage spikes on two MOSFETs illustrate that the three-dimensional package of the HB-IPEM can decrease parasitic inductance. Temperature distribution simulation results of the HB-IPEM using FLOTHERM are given. Heat dissipation of the solder joints makes the peak junction temperature of the chip drop obviously. The package realizes three-dimensional heat dissipation and has better thermal management.

UC电气专业的“Electronics”课程内容体系与教学探索

电子技术系列课程既是理论基础也是实践基础,对电气电子信息领域学生的知识、能力、素质的全面培养起到十分重要的作用。介绍中外合作UC电气专业的“Electronics”系列课程的教学计划和内容体系,展示了“理论课程重基础,以实践课程深化基础”的人才培养模式,以及通过PBL(Problem-Based Learning)教学模式培养学生自主学习、建构电子电路知识体系的教学探索经验。

ICU患者置入Power PICC导管特殊异位原因分析

目的:探讨ICU患者置入Power PICC导管后头端反折向上至同侧和对侧锁骨下静脉、头臂静脉等特殊异位的相关因素。方法:回顾性分析2021年9月至2022年9月某三甲医院ICU 520例PICC置管患者,通过胸部X线确定PICC导管头端反折向上至对侧和同侧锁骨下静脉、头臂静脉的患者,分析其特殊异位发生因素。结果:胸部X线结果显示25例患者PICC管头端反折向上异位至对侧和同侧锁骨下静脉、头臂静脉或颈内静脉,异位发生率4.8%,不同静脉置管反折异位发生率相比差异无统计学意义,P>0.05。结论:ICU患者PICC置入发生导管头端反折向上至同侧和对侧锁骨下静脉、头臂静脉等特殊异位的发生因素较多,包括同时留置CVC或血透管、正在滴注或泵入多种药物、PICC管头端异位的隐匿性、导管材质、自身疾病及机械通气等危险因素。

Fault Diagnosis of Power Electronic Circuits Based on Adaptive Simulated Annealing Particle Swarm Optimization

In the field of energy conversion,the increasing attention on power electronic equipment is fault detection and diagnosis.A power electronic circuit is an essential part of a power electronic system.The state of its internal components affects the performance of the system.The stability and reliability of an energy system can be improved by studying the fault diagnosis of power electronic circuits.Therefore,an algorithm based on adaptive simulated annealing particle swarm optimization(ASAPSO)was used in the present study to optimize a backpropagation(BP)neural network employed for the online fault diagnosis of a power electronic circuit.We built a circuit simulation model in MATLAB to obtain its DC output voltage.Using Fourier analysis,we extracted fault features.These were normalized as training samples and input to an unoptimized BP neural network and BP neural networks optimized by particle swarm optimization(PSO)and the ASAPSO algorithm.The accuracy of fault diagnosis was compared for the three networks.The simulation results demonstrate that a BP neural network optimized with the ASAPSO algorithm has higher fault diagnosis accuracy,better reliability,and adaptability and can more effectively diagnose and locate faults in power electronic circuits.

ZnO nanowires based degradable high-performance photodetectors for eco-friendly green electronics

Disposable devices designed for single and/or multiple reliable measurements over a short duration have attracted considerable interest recently. However, these devices often use non-recyclable and non-biodegradable materials and wasteful fabrication methods. Herein, we present ZnO nanowires(NWs) based degradable high-performance UV photodetectors(PDs) on flexible chitosan substrate. Systematic investigations reveal the presented device exhibits excellent photo response, including high responsivity(55 A/W), superior specific detectivity(4×10^(14) jones), and the highest gain(8.5×10~(10)) among the reported state of the art biodegradable PDs. Further, the presented PDs display excellent mechanical flexibility under wide range of bending conditions and thermal stability in the measured temperature range(5–50 ℃).The biodegradability studies performed on the device, in both deionized(DI) water(pH≈6) and PBS solution(pH=7.4),show fast degradability in DI water(20 mins) as compared to PBS(48 h). These results show the potential the presented approach holds for green and cost-effective fabrication of wearable, and disposable sensing systems with reduced adverse environmental impact.