A surface electromyography(sEMG)signal acquisition circuit based on high-order filtering is designed.We use a two-stage adjustable amplifier and a high-order Sallen-Key bandpass filter to solve the problems of non-adj...A surface electromyography(sEMG)signal acquisition circuit based on high-order filtering is designed.We use a two-stage adjustable amplifier and a high-order Sallen-Key bandpass filter to solve the problems of non-adjustable amplification gain and low filtering order in traditional acquisition circuits.The experimental results show that the designed sEMG signal acquisition device can eliminate power frequency interference effectively,the stopband drop of the filtering part reaches approximately-100 dB/dec,which can effectively extract useful signals between 20-500 Hz,and the amplification gain reaches 60 dB.展开更多
In this work,the performance of Lg = 22 nm In（0.75）Ga（0.25）As channel-based high electron mobility transistor（HEMT） on InP substrate is compared with metamorphic high electron mobility transistor（MHEMT） on GaA...In this work,the performance of Lg = 22 nm In（0.75）Ga（0.25）As channel-based high electron mobility transistor（HEMT） on InP substrate is compared with metamorphic high electron mobility transistor（MHEMT） on GaAs substrate.The devices features heavily doped In（0.6）Ga（0.4）As source/drain（S/D） regions,Si double δ-doping planar sheets on either side of the In（0.75）Ga（0.25） As channel layer to enhance the transconductance,and buried Pt metal gate technology for reducing short channel effects.The TCAD simulation results show that the InP HEMT performance is superior to GaAs MHEMT in terms of fT,f（max） and transconductance（g（mmax））.The 22 nm InP HEMT shows an fT of 733 GHz and an f（max） of 1340 GHz where as in GaAs MHEMT it is 644 GHz and 924 GHz,respectively.InGaAs channel-based HEMTs on InP/GaAs substrates are suitable for future sub-millimeter and millimeter wave applications.展开更多
基金Science and Technology Plan Project of Weinan City(No.2020ZDYF-JCYJ-177)Power Supply Technology Innovation Team of Shaanxi Railway Engineering Vocational and Technical College(No.KJTD201901)Graduate Program Funded Project of Shaanxi Railway Engineering Vocational and Technical College Scientific Research Fund(No.KY2018-77)。
文摘A surface electromyography(sEMG)signal acquisition circuit based on high-order filtering is designed.We use a two-stage adjustable amplifier and a high-order Sallen-Key bandpass filter to solve the problems of non-adjustable amplification gain and low filtering order in traditional acquisition circuits.The experimental results show that the designed sEMG signal acquisition device can eliminate power frequency interference effectively,the stopband drop of the filtering part reaches approximately-100 dB/dec,which can effectively extract useful signals between 20-500 Hz,and the amplification gain reaches 60 dB.
文摘In this work,the performance of Lg = 22 nm In（0.75）Ga（0.25）As channel-based high electron mobility transistor（HEMT） on InP substrate is compared with metamorphic high electron mobility transistor（MHEMT） on GaAs substrate.The devices features heavily doped In（0.6）Ga（0.4）As source/drain（S/D） regions,Si double δ-doping planar sheets on either side of the In（0.75）Ga（0.25） As channel layer to enhance the transconductance,and buried Pt metal gate technology for reducing short channel effects.The TCAD simulation results show that the InP HEMT performance is superior to GaAs MHEMT in terms of fT,f（max） and transconductance（g（mmax））.The 22 nm InP HEMT shows an fT of 733 GHz and an f（max） of 1340 GHz where as in GaAs MHEMT it is 644 GHz and 924 GHz,respectively.InGaAs channel-based HEMTs on InP/GaAs substrates are suitable for future sub-millimeter and millimeter wave applications.
