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The Possible Influences of the Increasing Anthropogenic Emissions in India on Tropospheric Ozone and OH 被引量:2
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作者 刘煜 李维亮 +3 位作者 周秀骥 I.S.A.ISAKSEN J.K.SUNDET 何金海 《Advances in Atmospheric Sciences》 SCIE CAS CSCD 2003年第6期968-977,共10页
A 3-D chemical transport model (OSLO CTM2) is used to investigate the influences of the increasing anthropogenic emission in India. The model is capable of reproducing the observational results of the INDOEX experimen... A 3-D chemical transport model (OSLO CTM2) is used to investigate the influences of the increasing anthropogenic emission in India. The model is capable of reproducing the observational results of the INDOEX experiment and the measurements in summer over India well. The model results show that when NOx and CO emissions in India are doubled, ozone concentration increases, and global average OH decreases a little. Under the effects of the Indian summer monsoon, NOx and CO in India are efficiently transported into the middle and upper troposphere by the upward current and the convective activities so that the NOX, CO, and ozone in the middle and upper troposphere significantly increase with the increasing NOx and CO emissions. These increases extensively influence a part of Asia, Africa, and Europe, and persist from June to September. 展开更多
关键词 OZONE oxidizing power upward current convective activity
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Efectiveness of national air pollution control policies on the air quality in metropolitan areas of China 被引量:22
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作者 Shuxiao Wang Jia Xing +2 位作者 Bin Zhao Carey Jang Jiming Hao 《Journal of Environmental Sciences》 SCIE EI CAS CSCD 2014年第1期13-22,共10页
Understanding the effectiveness of national air pollution controls is important for control policy design to improve the future air quality in China. This study evaluated the effectiveness of major national control po... Understanding the effectiveness of national air pollution controls is important for control policy design to improve the future air quality in China. This study evaluated the effectiveness of major national control policies implemented recently in China through a modeling analysis. The sulfur dioxide (SO2) control policy during the llth Five Year Plan period (2006-2010) had succeeded in reducing the national SO2 emission in 2010 by 14% from its 2005 level, which correspondingly reduced ambient SO2 and sulfate (SO42-) concentrations by 13%-15% and 8%-10% respectively over east China. The nitrogen oxides (NOx) control policy during the 12th Five Year Plan period (2011-2015) targets the reduction of the national NOx emission in 2015 by 10% on the basis of 2010. The simulation results suggest that such a reduction in NOx emission will reduce the ambient nitrogen dioxide (NO2), nitrate (NO3-), 1-hr maxima ozone (03) concentrations and total nitrogen deposition by 8%, 3%-14%, 2% and 2%--4%, respectively over east China. The application of new emission standards for power plants will further reduce the NO2, NO3-, 1-hr maxima 03 concentrations and total nitrogen deposition by 2%-4%, 1%-%, 0-2% and 1%-2%, respectively. Sensitivity analysis was conducted to evaluate the inter-provincial impacts of emission reduction in Beijing-Tianjin-Hebei and the Yangtze River Delta, which indicated the need to implement joint regional air pollution control. 展开更多
关键词 air pollution control sulfur dioxide nitrogen oxides power plant
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The influence of RF power on the electrical properties of sputtered amorphous InGa-Zn-O thin films and devices 被引量:5
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作者 施俊斐 董承远 +3 位作者 戴文君 吴杰 陈宇霆 詹润泽 《Journal of Semiconductors》 EI CAS CSCD 2013年第8期56-60,共5页
The influence of radio frequency(RF) power on the properties of magnetron sputtered amorphous indium gallium zinc oxide(a-IGZO) thin films and the related thin-film transistor(TFT) devices is investigated compre... The influence of radio frequency(RF) power on the properties of magnetron sputtered amorphous indium gallium zinc oxide(a-IGZO) thin films and the related thin-film transistor(TFT) devices is investigated comprehensively.A series of a-IGZO thin films prepared with magnetron sputtering at various RF powers are examined.The results prove that the deposition rate sensitively depends on RF power.In addition,the carrier concentration increases from 0.91 x 1019 to 2.15 x 1019 cm-3 with the RF power rising from 40 to 80 W,which may account for the corresponding decrease in the resistivity of the a-IGZO thin films.No evident impacts of RF power are observed on the surface roughness,crystalline nature and stoichiometry of the a-IGZO samples.On the other hand,optical transmittance is apparently influenced by RF power where the extracted optical band-gap value increases from 3.48 to 3.56 eV with RF power varying from 40 to 80 W,as is supposed to result from the carrierinduced band-filling effect.The rise in RF power can also affect the performance of a-IGZO TFTs,in particular by increasing the field-effect mobility clearly,which is assumed to be due to the alteration of the extended states in a-IGZO thin films. 展开更多
关键词 thin-film transistors amorphous oxide semiconductors magnetron sputtering radio frequency power
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