Microwave Electron Cyclotron Resonance (ECR) Plasma assisted Chemical Vapor Deposition (CVD) technology has been used to prepare Si3N4 films, which were analyzed by using infrared (IR) transmission spectroscopy and XP...Microwave Electron Cyclotron Resonance (ECR) Plasma assisted Chemical Vapor Deposition (CVD) technology has been used to prepare Si3N4 films, which were analyzed by using infrared (IR) transmission spectroscopy and XPS. The analysis results show that with the increase of the deposition temperature, the H content decreases, and the densification of the film increases.When the temperature is up to 360℃, the stoichiometrical rate of Si:N is close to 0.75. The protective property of Si3N4 films is also examined.展开更多
The LB film of the title complex was prepared by dropping a benzene solution of the title complex on the surfaceof water subphase at 25±1℃.The film was deposited in Z type on various hydrophilic pretreated subst...The LB film of the title complex was prepared by dropping a benzene solution of the title complex on the surfaceof water subphase at 25±1℃.The film was deposited in Z type on various hydrophilic pretreated substrates ofquartz,CaF;and electronic conductive glass for different purposes.The π-A curve of the film shows that thecross section per molecule is 125;,which indicates that the alkyl chain of the molecule is basically perpendiculalto the surface of the substrate.UV,IR spectra and transmission electronic microscopy of the film were also obtained.展开更多
P-type nitrogen-doped ZnO films are prepared successfully by in-situ thermal oxidation of Zn3N2 films. The prepared films are characterized by x-ray diffraction, non-Rutherford back.scattering （non-RBS） spectroscopy...P-type nitrogen-doped ZnO films are prepared successfully by in-situ thermal oxidation of Zn3N2 films. The prepared films are characterized by x-ray diffraction, non-Rutherford back.scattering （non-RBS） spectroscopy, x- ray photoelectron spectroscopy, and photoluminescence spectrum. The results show that the Zn3N1 films start to transform to ZnO at 400℃ and the total nitrogen content decreases with the increasing annealing temperature. The p-type fihns are achieved at 500℃ with a low resistivity of 6.33Ω.cm and a high hole concentration of ＋8.82 × 10^17 cm-3, as well as a low level of carbon contamination, indicating that the substitutional nitrogen （No） is an effective acceptor in the ZnO：N film. The photoluminescence spectra show clear UV emissions and also indicate the presence of oxygen vacancy （Vo） defects in the ZnO：N films. The p-type doping mechanism is briefly discussed.展开更多
The Bi4Ti3Oi2 and Bi3.25La0.75Ti3O12 thin films were prepared on the Pt/Ti/SiO2/Si substrate using the sol-gel method. The effect of La doping on the microstructure and ferroelectric properties of Bi4Ti3O12 films were...The Bi4Ti3Oi2 and Bi3.25La0.75Ti3O12 thin films were prepared on the Pt/Ti/SiO2/Si substrate using the sol-gel method. The effect of La doping on the microstructure and ferroelectric properties of Bi4Ti3O12 films were investigated. Both the Bi4Ti3O12 and Bi3.25La0.75Ti3O12 thin films exhibited typical bismuth layered perovskite structure. The 2Pr （remanent polarization） value of Bi3.25La0.75Ti3O12 thin films is 18.6 μC/cm^2, which is much larger than that of Bi4Ti3O12 thin films. And the Bi3.2eLa0.75Ti3O12 films show fatigue-free behavior, while the Bi4Ti3O12 thin films exhibit the fatigue problem. The mechanism of improvement of La doping was discussed.展开更多
The tungsten trioxide（WO3） thin films were firstly prepared by spin-coating-pyrolysis methods using the ammonium metatungstate（（NH4）6H2W12O40）DMF/water solution, and successfully applied as the efficient compact...The tungsten trioxide（WO3） thin films were firstly prepared by spin-coating-pyrolysis methods using the ammonium metatungstate（（NH4）6H2W12O40）DMF/water solution, and successfully applied as the efficient compact layers for the planar perovskite solar cells. The influence of the WO3 film thickness and the rinsing treatment of CH_3NH_3 PbI_3 thin film with isopropanol on the photovoltaic performance of the corresponding perovskite solar cells was systematically investigated. The results revealed that the perovskite solar cell with a 62 nm thick WO3 compact layer achieved a photoelectric conversion efficiency of 5.72%, with a short circuit photocurrent density of 17.39 mA/cm^2, an open circuit voltage of 0.58 V and a fill factor of 0.57. The photoelectric conversion efficiency was improved from 5.72% to 7.04% by the isopropanol rinsing treatment.展开更多
Metal oxide semiconductors(MOSs) are ideal sensing materials for detecting volatile organic compounds due to their low cost, diversity, high stability, and ease of production. However, it remains a grand challenge to ...Metal oxide semiconductors(MOSs) are ideal sensing materials for detecting volatile organic compounds due to their low cost, diversity, high stability, and ease of production. However, it remains a grand challenge to develop the MOSs-based gas sensors for sensing isopropanol with desired performance via a simple, effective,and controllable method. Herein, we reported the preparation of the Al-doped Zn O(AZO)/WO_(3) heterostructure films by directly depositing the AZO coating onto the WO_(3) coating using a strategy of magnetron sputtering. The AZO/WO_(3) heterostructure films were constructed by numbers of irregular nanoparticles that were interconnected with each other. The AZO/WO_(3) heterostructure films-based gas sensors exhibited excellent isopropanolsensing performance with high response, promising selectivity, low detection limit, fast response rate, wide detection range, and ideal reproducibility. The promising isopropanol-sensing performance of the AZO/WO_(3) heterostructure films arises mainly from their high uniformity, unique microstructures with high surface roughness,and the construction of the heterostructure between the AZO and WO_(3) coatings. This work provides a versatile approach to prepare the MOSs-based heterostructure films for assembling the gas sensors.展开更多
文摘Microwave Electron Cyclotron Resonance (ECR) Plasma assisted Chemical Vapor Deposition (CVD) technology has been used to prepare Si3N4 films, which were analyzed by using infrared (IR) transmission spectroscopy and XPS. The analysis results show that with the increase of the deposition temperature, the H content decreases, and the densification of the film increases.When the temperature is up to 360℃, the stoichiometrical rate of Si:N is close to 0.75. The protective property of Si3N4 films is also examined.
文摘The LB film of the title complex was prepared by dropping a benzene solution of the title complex on the surfaceof water subphase at 25±1℃.The film was deposited in Z type on various hydrophilic pretreated substrates ofquartz,CaF;and electronic conductive glass for different purposes.The π-A curve of the film shows that thecross section per molecule is 125;,which indicates that the alkyl chain of the molecule is basically perpendiculalto the surface of the substrate.UV,IR spectra and transmission electronic microscopy of the film were also obtained.
基金Supported by the National Natural Science Foundation of China under Grant Nos 10775033 and 11075038
文摘P-type nitrogen-doped ZnO films are prepared successfully by in-situ thermal oxidation of Zn3N2 films. The prepared films are characterized by x-ray diffraction, non-Rutherford back.scattering （non-RBS） spectroscopy, x- ray photoelectron spectroscopy, and photoluminescence spectrum. The results show that the Zn3N1 films start to transform to ZnO at 400℃ and the total nitrogen content decreases with the increasing annealing temperature. The p-type fihns are achieved at 500℃ with a low resistivity of 6.33Ω.cm and a high hole concentration of ＋8.82 × 10^17 cm-3, as well as a low level of carbon contamination, indicating that the substitutional nitrogen （No） is an effective acceptor in the ZnO：N film. The photoluminescence spectra show clear UV emissions and also indicate the presence of oxygen vacancy （Vo） defects in the ZnO：N films. The p-type doping mechanism is briefly discussed.
基金the Foundation of Wuhan University of Science and Technology
文摘The Bi4Ti3Oi2 and Bi3.25La0.75Ti3O12 thin films were prepared on the Pt/Ti/SiO2/Si substrate using the sol-gel method. The effect of La doping on the microstructure and ferroelectric properties of Bi4Ti3O12 films were investigated. Both the Bi4Ti3O12 and Bi3.25La0.75Ti3O12 thin films exhibited typical bismuth layered perovskite structure. The 2Pr （remanent polarization） value of Bi3.25La0.75Ti3O12 thin films is 18.6 μC/cm^2, which is much larger than that of Bi4Ti3O12 thin films. And the Bi3.2eLa0.75Ti3O12 films show fatigue-free behavior, while the Bi4Ti3O12 thin films exhibit the fatigue problem. The mechanism of improvement of La doping was discussed.
基金Project supported by the National Natural Science Foundation of China(Nos.51472071,512720616,51072043)the National Basic Research Program of China(No.2011CBA00700)
文摘The tungsten trioxide（WO3） thin films were firstly prepared by spin-coating-pyrolysis methods using the ammonium metatungstate（（NH4）6H2W12O40）DMF/water solution, and successfully applied as the efficient compact layers for the planar perovskite solar cells. The influence of the WO3 film thickness and the rinsing treatment of CH_3NH_3 PbI_3 thin film with isopropanol on the photovoltaic performance of the corresponding perovskite solar cells was systematically investigated. The results revealed that the perovskite solar cell with a 62 nm thick WO3 compact layer achieved a photoelectric conversion efficiency of 5.72%, with a short circuit photocurrent density of 17.39 mA/cm^2, an open circuit voltage of 0.58 V and a fill factor of 0.57. The photoelectric conversion efficiency was improved from 5.72% to 7.04% by the isopropanol rinsing treatment.
基金financially supported by the National Natural Science Foundation of China (Nos.52172094 and 22209105)Shanghai Municipal Natural Science Foundation (No.21ZR1426700)the “Shuguang” Program of Shanghai Education Commission (No.19SG46)。
文摘Metal oxide semiconductors(MOSs) are ideal sensing materials for detecting volatile organic compounds due to their low cost, diversity, high stability, and ease of production. However, it remains a grand challenge to develop the MOSs-based gas sensors for sensing isopropanol with desired performance via a simple, effective,and controllable method. Herein, we reported the preparation of the Al-doped Zn O(AZO)/WO_(3) heterostructure films by directly depositing the AZO coating onto the WO_(3) coating using a strategy of magnetron sputtering. The AZO/WO_(3) heterostructure films were constructed by numbers of irregular nanoparticles that were interconnected with each other. The AZO/WO_(3) heterostructure films-based gas sensors exhibited excellent isopropanolsensing performance with high response, promising selectivity, low detection limit, fast response rate, wide detection range, and ideal reproducibility. The promising isopropanol-sensing performance of the AZO/WO_(3) heterostructure films arises mainly from their high uniformity, unique microstructures with high surface roughness,and the construction of the heterostructure between the AZO and WO_(3) coatings. This work provides a versatile approach to prepare the MOSs-based heterostructure films for assembling the gas sensors.
