Hickman's fast nonadiabatic collision model for the ion-pair formation reaction A+BC→A^++BC^- was improved,where the classical trajectory has been represented by solution of motion equation UR=-dV(R)/dR, here V(R...Hickman's fast nonadiabatic collision model for the ion-pair formation reaction A+BC→A^++BC^- was improved,where the classical trajectory has been represented by solution of motion equation UR=-dV(R)/dR, here V(R)is Morse potential.Employing this model to the CS+O_2→CS^++O_2^-reaction,a satisfactory agreement with experimental data has been obtained.展开更多
An improved single-π equivalent circuit model for on-chip inductors in the GaAs process is presented in this paper. Considering high order parasites, the model is established by comprising an improved skin effect bra...An improved single-π equivalent circuit model for on-chip inductors in the GaAs process is presented in this paper. Considering high order parasites, the model is established by comprising an improved skin effect branch and a substrate lateral coupling branch. The parameter extraction is based on an improved characteristic function approach and vector fitting method. The model has better simulation than the previous work over the measured data of 2.5r and 4.5r on-chip inductors in the GaAs process.展开更多
文摘Hickman's fast nonadiabatic collision model for the ion-pair formation reaction A+BC→A^++BC^- was improved,where the classical trajectory has been represented by solution of motion equation UR=-dV(R)/dR, here V(R)is Morse potential.Employing this model to the CS+O_2→CS^++O_2^-reaction,a satisfactory agreement with experimental data has been obtained.
基金Project supported by the National Natural Science Foundation of China(No.61674036)
文摘An improved single-π equivalent circuit model for on-chip inductors in the GaAs process is presented in this paper. Considering high order parasites, the model is established by comprising an improved skin effect branch and a substrate lateral coupling branch. The parameter extraction is based on an improved characteristic function approach and vector fitting method. The model has better simulation than the previous work over the measured data of 2.5r and 4.5r on-chip inductors in the GaAs process.
