The DGW-I is a new material processing facility developed in China,which was firstly carried into orbit in November 1999 by the SZ-1 spacecraft and then in January 2001 carried by SZ-2 into space again,and successfull...The DGW-I is a new material processing facility developed in China,which was firstly carried into orbit in November 1999 by the SZ-1 spacecraft and then in January 2001 carried by SZ-2 into space again,and successfully processed 6 samples of materials,including 3 samples of alloys,2 of semiconductors and 1 sample of oxide crystal.展开更多
Cu_2NiSnS_4 nanoparticles were prepared for the first time using a facile solid-phase process at a temperature of 180 °C. The crystalline structure, morphology and optical properties of the Cu_2NiSnS_4 nanopartic...Cu_2NiSnS_4 nanoparticles were prepared for the first time using a facile solid-phase process at a temperature of 180 °C. The crystalline structure, morphology and optical properties of the Cu_2NiSnS_4 nanoparticles were characterized by means of X-ray diffraction(XRD), field emission scanning electron microscopy(FESEM), transmission electron microscope(TEM) and ultraviolet-visible(UV-vis) spectrophotometer. The band gap and conversion efficiency of Cu_2NiSnS_4 nanoparticles were studied at various temperature. The results showed that the Cu_2NiSnS_4 nanoparticles exhibited an optimum band gap of 1.58 e V and a conversion efficiency of 0.64% at 180 °C, indicating that it maybe be useful in low-cost thin film solar cells.展开更多
文摘The DGW-I is a new material processing facility developed in China,which was firstly carried into orbit in November 1999 by the SZ-1 spacecraft and then in January 2001 carried by SZ-2 into space again,and successfully processed 6 samples of materials,including 3 samples of alloys,2 of semiconductors and 1 sample of oxide crystal.
基金supported by the Fundamental Research Funds for the Central Public Welfare Research Institutes (No.TKS20200311)。
文摘Cu_2NiSnS_4 nanoparticles were prepared for the first time using a facile solid-phase process at a temperature of 180 °C. The crystalline structure, morphology and optical properties of the Cu_2NiSnS_4 nanoparticles were characterized by means of X-ray diffraction(XRD), field emission scanning electron microscopy(FESEM), transmission electron microscope(TEM) and ultraviolet-visible(UV-vis) spectrophotometer. The band gap and conversion efficiency of Cu_2NiSnS_4 nanoparticles were studied at various temperature. The results showed that the Cu_2NiSnS_4 nanoparticles exhibited an optimum band gap of 1.58 e V and a conversion efficiency of 0.64% at 180 °C, indicating that it maybe be useful in low-cost thin film solar cells.
