Nonvolatile memories （NVMs） with triple layers of silicon nanocrystals were fabricated with conventional CMOS technology. This paper explores the program/erase performance and reliability of NVMs with three layers o...Nonvolatile memories （NVMs） with triple layers of silicon nanocrystals were fabricated with conventional CMOS technology. This paper explores the program/erase performance and reliability of NVMs with three layers of nanocrystais. The results indicate that the nanocrystals in the triple-layer nanocrystal NVM （NCNVM） are difficult to fully charge during the programming process. The programming speed of the triple-layer NCNVMs is quicker than that of single-layer NCNVMs, which means that the second and third layers of nanocrystals in the triple-layer NCNVM affect the charge of the first layer nanocrystals. Reliability tests show that the memory window has little degradation after 1× 10^4 cycles.展开更多
基金Supported by the Basic Research Foundation of Tsinghua National Laboratory for Information Science and Technology (TNList)
文摘Nonvolatile memories （NVMs） with triple layers of silicon nanocrystals were fabricated with conventional CMOS technology. This paper explores the program/erase performance and reliability of NVMs with three layers of nanocrystais. The results indicate that the nanocrystals in the triple-layer nanocrystal NVM （NCNVM） are difficult to fully charge during the programming process. The programming speed of the triple-layer NCNVMs is quicker than that of single-layer NCNVMs, which means that the second and third layers of nanocrystals in the triple-layer NCNVM affect the charge of the first layer nanocrystals. Reliability tests show that the memory window has little degradation after 1× 10^4 cycles.
