This study investigated the resistive switching characteristics of the Ni/HfCVPt structure for nonvolatile memory application.The Ni/HfO_2/Pt device showed bipolar resistive switching（RS） without a forming process, ...This study investigated the resistive switching characteristics of the Ni/HfCVPt structure for nonvolatile memory application.The Ni/HfO_2/Pt device showed bipolar resistive switching（RS） without a forming process, and the formation and rupture of conducting filaments are responsible for the resistive switching phenomenon.In addition,the device showed some excellent memory performances,including a large on/off ratio（〉 3×10~5）,very good data retention（〉 10~3 s @ 200℃） and uniformity of switching parameters.Considering these results,the Ni/HfO_2/Pt device has the potential for nonvolatile memory applications.展开更多
文摘This study investigated the resistive switching characteristics of the Ni/HfCVPt structure for nonvolatile memory application.The Ni/HfO_2/Pt device showed bipolar resistive switching（RS） without a forming process, and the formation and rupture of conducting filaments are responsible for the resistive switching phenomenon.In addition,the device showed some excellent memory performances,including a large on/off ratio（〉 3×10~5）,very good data retention（〉 10~3 s @ 200℃） and uniformity of switching parameters.Considering these results,the Ni/HfO_2/Pt device has the potential for nonvolatile memory applications.
