Proportional Difference Operator (PDO) method is proposed for the first time to determine the key parameters of a MOSFET, including the threshold voltage and ca rrier mobility.This method is applied to the transfer ch...Proportional Difference Operator (PDO) method is proposed for the first time to determine the key parameters of a MOSFET, including the threshold voltage and ca rrier mobility.This method is applied to the transfer characteristic of a MOSFET first, and then the effect of gate voltage on carrier mobility is considered. The dependence of carrier mobility on the gate voltage is obtained.展开更多
s:A detailed description of relaxation spectroscopy technique under direct tunneling stress is given.A double peak phenomena by applied relaxation spectroscopy on ultra thin (<3nm) gate oxide is found.It suggests ...s:A detailed description of relaxation spectroscopy technique under direct tunneling stress is given.A double peak phenomena by applied relaxation spectroscopy on ultra thin (<3nm) gate oxide is found.It suggests that two kinds of traps exist in the degradation of gate oxide.It is also observed that both the trap density and the generation/capture cross section of oxide trap and interface trap are smaller in ultra thin gate oxide (<3nm) under DT stress than those in the thicker oxide (>4nm) under FN stress,and the centroid of oxide trap is closer to anode interface than in the center of oxide.展开更多
By proportional differentiating cumulative distribution function of normal distribution,the spectroscopy characteristics are found.The characteristic parameters can be extracted directly from the height and position o...By proportional differentiating cumulative distribution function of normal distribution,the spectroscopy characteristics are found.The characteristic parameters can be extracted directly from the height and position of the spectroscopy peaks.On this basis,a new method for determining these parameters of normal distribution is developed.This method can be applied to microelectronics reliability study.展开更多
文摘Proportional Difference Operator (PDO) method is proposed for the first time to determine the key parameters of a MOSFET, including the threshold voltage and ca rrier mobility.This method is applied to the transfer characteristic of a MOSFET first, and then the effect of gate voltage on carrier mobility is considered. The dependence of carrier mobility on the gate voltage is obtained.
文摘s:A detailed description of relaxation spectroscopy technique under direct tunneling stress is given.A double peak phenomena by applied relaxation spectroscopy on ultra thin (<3nm) gate oxide is found.It suggests that two kinds of traps exist in the degradation of gate oxide.It is also observed that both the trap density and the generation/capture cross section of oxide trap and interface trap are smaller in ultra thin gate oxide (<3nm) under DT stress than those in the thicker oxide (>4nm) under FN stress,and the centroid of oxide trap is closer to anode interface than in the center of oxide.
文摘By proportional differentiating cumulative distribution function of normal distribution,the spectroscopy characteristics are found.The characteristic parameters can be extracted directly from the height and position of the spectroscopy peaks.On this basis,a new method for determining these parameters of normal distribution is developed.This method can be applied to microelectronics reliability study.
