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Ensemble prediction model of solar proton events associated with solar flares and coronal mass ejections 被引量:4
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作者 Xin Huang Hua-Ning Wang Le-Ping Li 《Research in Astronomy and Astrophysics》 SCIE CAS CSCD 2012年第3期313-321,共9页
An ensemble prediction model of solar proton events (SPEs), combining the information of solar flares and coronal mass ejections (CMEs), is built. In this model, solar flares are parameterized by the peak flux, th... An ensemble prediction model of solar proton events (SPEs), combining the information of solar flares and coronal mass ejections (CMEs), is built. In this model, solar flares are parameterized by the peak flux, the duration and the longitude. In addition, CMEs are parameterized by the width, the speed and the measurement position angle. The importance of each parameter for the occurrence of SPEs is estimated by the information gain ratio. We find that the CME width and speed are more informative than the flare’s peak flux and duration. As the physical mechanism of SPEs is not very clear, a hidden naive Bayes approach, which is a probability-based calculation method from the field of machine learning, is used to build the prediction model from the observational data. As is known, SPEs originate from solar flares and/or shock waves associated with CMEs. Hence, we first build two base prediction models using the properties of solar flares and CMEs, respectively. Then the outputs of these models are combined to generate the ensemble prediction model of SPEs. The ensemble prediction model incorporating the complementary information of solar flares and CMEs achieves better performance than each base prediction model taken separately. 展开更多
关键词 solar proton events—Sun: flares—Sun: coronal mass ejections—methods: statistical—ensemble learning
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Evidence for a Strong Correlation of Solar Proton Events with Solar Radio Bursts
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作者 Xiao-CongLi Lian-ShengKang 《Chinese Journal of Astronomy and Astrophysics》 CSCD 2005年第1期110-116,共7页
A statistical analysis is made on the correlation between solar proton events with energies >10Mev and solar radio bursts during the four-year period from 1997 November to 2000 November. We examine 28 solar proton ... A statistical analysis is made on the correlation between solar proton events with energies >10Mev and solar radio bursts during the four-year period from 1997 November to 2000 November. We examine 28 solar proton events and their corresponding solar radio bursts at 15400, 8800, 4995, 2695, 1415, 606, 410 and 245 MHz. The statistical result shows that there is a close association between solar proton events and ≥3 solar radio bursts occurring at several frequencies, one or two days before. In particular, it is noteworthy that proton events occurring in pairs within the same month are preceded 1-2 days by individual radio bursts and most of the radio bursts of solar flares occur at all eight frequencies. Those 245 MHz radio bursts associated with proton events have intense peak fluxes (up to 67000 sfu). Solar proton events are preceded 1 or 2 days by≥ 3 radio bursts at several frequencies and proton events occurring in pairs within the same month are preceded 1 or 2 days by some individual radio bursts. These correlations may be used for providing short-term or medium-term prediction of solar proton events. 展开更多
关键词 solar proton event - solar radio burst
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Investigation of maximum proton energy for qualified ground based evaluation of single-event effects in SRAM devices 被引量:7
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作者 Zhan-Gang Zhang Yun Huang +1 位作者 Yun-Fei En Zhi-Feng Lei 《Nuclear Science and Techniques》 SCIE CAS CSCD 2019年第3期97-104,共8页
Existing standards show a clear discrepancy in the specification of the maximum proton energy for qualified ground-based evaluation of single-event effects,which can range from 180 to 500 MeV. This work finds that the... Existing standards show a clear discrepancy in the specification of the maximum proton energy for qualified ground-based evaluation of single-event effects,which can range from 180 to 500 MeV. This work finds that the threshold linear energy transfer of a tested device is a critical parameter for determining the maximum proton energy. The inner mechanisms are further revealed. Highenergy deposition events(>10 MeV) in sensitive volumes are attributed to the interaction between protons and the tungsten vias in the metallization layers. 展开更多
关键词 proton Single-event effect THRESHOLD LET MONTE Carlo simulation
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A comparative analysis on two solar proton events 被引量:2
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作者 LE GuiMing1,2,3,4, HAN YanBen2 & ZHANG YiJun3 1 Key Laboratory of Radiometric Calibration and Validation for Environmental Satellites, China Meteorological Administration, Beijing 100081, China 2 National Astronomical Observatories, Chinese Academy of Sciences, Beijing 100012, China +1 位作者 3 Chinese Academy of Meteorological Sciences, China Meteorological Administration, Beijing 100081, China 4 National Center for Space Weather, China Meteorological Administration, Beijing 100081, China 《Chinese Science Bulletin》 SCIE EI CAS 2007年第1期47-51,共5页
This paper presents a comparative analysis on the two Solar Proton Events (SPE), which occurred on 14 July 2000 (Bastille Day) and 28 October 2003 (28OCT03) respectively. It is found that although the peak flux of the... This paper presents a comparative analysis on the two Solar Proton Events (SPE), which occurred on 14 July 2000 (Bastille Day) and 28 October 2003 (28OCT03) respectively. It is found that although the peak flux of the latter seemed to be greater than that of the former based on geostationary observations, the maximum intensities of the energetic protons (>10 MeV and 30 MeV) during the Bastille Day event were all higher than those of the 28OCT03 event according to the interplanetary observations. Further analysis indicated that the quantity of the seed particles, which could be accelerated to the energies exceeding 10 and 30 MeV by the Coronal Mass Ejection (CME)-driven shock on 14 July 2000, was far larger than that of the 28OCT03 event. In the Bastille Day case, when the CME approached to the height around 14 R⊙, the CME-driven shock would reach its maximum capacity in accelerating the solar en- ergetic protons (>100 MeV). In contrast, on 28 October 2003, when CME approached to the height about 58R⊙, the CME-driven shock reached its highest potential in accelerating the solar energetic protons of the same category. At this moment, the peak flux (>100 MeV) was about 155 pfu, which was much lower than 355 pfu measured on 14 July 2000. This demonstrated that in the Bastille Day event, the quantity of the seed particles, which could be accelerated to the energy beyond 100 MeV, was significantly larger than its counterpart in the 28OCT03 case. Therefore, the peak flux of an SPE event depends not only on the interplanetary intensity of the solar energetic particles, but also on the velocity of the associated CME-driven shock, and the quantity of the seed particles as well as on the interplanetary magnetic en- vironment. This paper also reveals that the magnetic sheath associated with ICME on 28 October 2003 captured a large number of solar energetic protons, including those having energy greater than 100 MeV. 展开更多
关键词 太阳质子 CME 太阳耀斑 太阳系
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Single-event effects induced by medium-energy protons in 28 nm system-on-chip 被引量:4
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作者 Wei-Tao Yang Qian Yin +6 位作者 Yang Li Gang Guo Yong-Hong Li Chao-Hui He Yan-Wen Zhang Fu-Qiang Zhang Jin-Hua Han 《Nuclear Science and Techniques》 SCIE CAS CSCD 2019年第10期55-62,共8页
Single-event effects(SEEs)induced by mediumenergy protons in a 28 nm system-on-chip(SoC)were investigated at the China Institute of Atomic Energy.An on-chip memory block was irradiated with 90 MeV and 70 MeV protons,r... Single-event effects(SEEs)induced by mediumenergy protons in a 28 nm system-on-chip(SoC)were investigated at the China Institute of Atomic Energy.An on-chip memory block was irradiated with 90 MeV and 70 MeV protons,respectively.Single-bit upset and multicell upset events were observed,and an uppermost number of nine upset cells were discovered in the 90 MeV proton irradiation test.The results indicate that the SEE sensitivities of the 28 nm SoC to the 90 MeV and 70 MeV protons were similar.Cosmic Ray Effects on Micro-Electronics Monte Carlo simulations were analyzed,and it demonstrates that protons can induce effects in a 28 nm SoC if their energies are greater than 1.4 MeV and that the lowest corresponding linear energy transfer was 0.142 MeV cm^2 mg^-1.The similarities and discrepancies of the SEEs induced by the 90 MeV and 70 MeV protons were analyzed. 展开更多
关键词 Single-event effect proton SYSTEM-ON-CHIP
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Impact of energy straggle on proton-induced single event upset test in a 65-nm SRAM cell 被引量:1
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作者 叶兵 刘杰 +8 位作者 王铁山 刘天奇 罗捷 王斌 殷亚楠 姬庆刚 胡培培 孙友梅 侯明东 《Chinese Physics B》 SCIE EI CAS CSCD 2017年第8期536-541,共6页
This paper presents a simulation study of the impact of energy straggle on a proton-induced single event upset (SEU) test in a commercial 65-nm static random access memory cell. The simulation results indicate that ... This paper presents a simulation study of the impact of energy straggle on a proton-induced single event upset (SEU) test in a commercial 65-nm static random access memory cell. The simulation results indicate that the SEU cross sections for low energy protons are significantly underestimated due to the use of degraders in the SEU test. In contrast, using degraders in a high energy proton test may cause the overestimation of the SEU cross sections. The results are confirmed by the experimental data and the impact of energy straggle on the SEU cross section needs to be taken into account when conducting a proton-induced SEU test in a nanodevice using degraders. 展开更多
关键词 single event upset energy straggle proton irradiation NANODEVICE
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Geant4 simulation of proton-induced single event upset in three-dimensional die-stacked SRAM device
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作者 Bing Ye Li-Hua Mo +8 位作者 Tao Liu Jie Luo Dong-Qing Li Pei-Xiong Zhao Chang Cai Ze He You-Mei Sun Ming-Dong Hou Jie Liu 《Chinese Physics B》 SCIE EI CAS CSCD 2020年第2期374-380,共7页
Geant4 Monte Carlo simulation results of the single event upset(SEU)induced by protons with energy ranging from 0.3 MeV to 1 GeV are reported.The SEU cross section for planar and three-dimensional(3D)die-stacked SRAM ... Geant4 Monte Carlo simulation results of the single event upset(SEU)induced by protons with energy ranging from 0.3 MeV to 1 GeV are reported.The SEU cross section for planar and three-dimensional(3D)die-stacked SRAM are calculated.The results show that the SEU cross sections of the planar device and the 3D device are different from each other under low energy proton direct ionization mechanism,but almost the same for the high energy proton.Besides,the multi-bit upset(MBU)ratio and pattern are presented and analyzed.The results indicate that the MBU ratio of the 3D die-stacked device is higher than that of the planar device,and the MBU patterns are more complicated.Finally,the on-orbit upset rate for the 3D die-stacked device and the planar device are calculated by SPACE RADIATION software.The calculation results indicate that no matter what the orbital parameters and shielding conditions are,the on-orbit upset rate of planar device is higher than that of 3D die-stacked device. 展开更多
关键词 3D-IC single event upset GEANT4 proton
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Impact of proton-induced alteration of carrier lifetime on single-event transient in SiGe heterojunction bipolar transistor
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作者 Jia-Nan Wei Chao-Hui He +2 位作者 Pei Li Yong-Hong Li Hong-Xia Guo 《Chinese Physics B》 SCIE EI CAS CSCD 2019年第7期375-380,共6页
This paper presents an investigation into the impact of proton-induced alteration of carrier lifetime on the singleevent transient(SET) caused by heavy ions in silicon–germanium heterojunction bipolar transistor(SiGe... This paper presents an investigation into the impact of proton-induced alteration of carrier lifetime on the singleevent transient(SET) caused by heavy ions in silicon–germanium heterojunction bipolar transistor(SiGe HBT).The ioninduced current transients and integrated charge collections under different proton fluences are obtained based on technology computer-aided design(TCAD) simulation.The results indicate that the impact of carrier lifetime alteration is determined by the dominating charge collection mechanism at the ion incident position and only the long-time diffusion process is affected.With a proton fluence of 5 × 1013 cm-2, almost no change is found in the transient feature, and the charge collection of events happened in the region enclosed by deep trench isolation(DTI), where prompt funneling collection is the dominating mechanism.Meanwhile, for the events happening outside DTI where diffusion dominates the collection process, the peak value and the duration of the ion-induced current transient both decrease with increasing proton fluence, leading to a great decrease in charge collection. 展开更多
关键词 silicon–germanium heterojunction bipolar transistor(SiGe HBT) proton irradiation MINORITY carrier lifetime single-event transient technology COMPUTER-AIDED design(TCAD) simulation
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Prediction of proton-induced SEE error rates for the VATA160 ASIC 被引量:1
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作者 Kai Xi Di Jiang +7 位作者 Shan-Shan Gao Jie Kong Hong-Yun Zhao Hai-Bo Yang Tian-Qi Liu Bin Wang Bing Ye Jie Liu 《Nuclear Science and Techniques》 SCIE CAS CSCD 2017年第1期88-93,共6页
We predict proton single event effect(SEE)error rates for the VATA160 ASIC chip on the Dark Matter Particle Explorer(DAMPE) to evaluate its radiation tolerance.Lacking proton test facilities,we built a Monte Carlo sim... We predict proton single event effect(SEE)error rates for the VATA160 ASIC chip on the Dark Matter Particle Explorer(DAMPE) to evaluate its radiation tolerance.Lacking proton test facilities,we built a Monte Carlo simulation tool named PRESTAGE to calculate the proton SEE cross-sections.PRESTAGE is based on the particle transport toolkit Geant4.It adopts a location-dependent strategy to derive the SEE sensitivity of the device from heavy-ion test data,which have been measured at the HI-13 tandem accelerator of the China Institute of Atomic Energy and the heavy-ion research facility in Lanzhou.The AP-8,SOLPRO,and August 1972 worst-case models are used to predict the average and peak proton fluxes on the DAMPE orbit.Calculation results show that the averaged proton SEE error rate for the VATA160 chip is approximately 2.17×10^(-5)/device/day.Worst-case error rates for the Van Allen belts and solar energetic particle events are 1-3 orders of magnitude higher than the averaged error rate. 展开更多
关键词 proton ASIC SINGLE event effects ERROR rates
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Proton pump inhibitor for non-erosive reflux disease:A meta-analysis 被引量:8
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作者 Ji-Xiang Zhang Meng-Yao Ji +8 位作者 Jia Song Hong-Bo Lei Shi Qiu Jing Wang Ming-Hua Ai Jun Wang Xiao-Guang Lv Zi-Rong Yang Wei-Guo Dong 《World Journal of Gastroenterology》 SCIE CAS 2013年第45期8408-8419,共12页
AIM:To evaluate the efficacy,safety and influential factors of proton pump inhibitor(PPI)treatment for non-erosive reflux disease(NERD).METHODS:PubMed,MEDLINE,EMBASE and the Cochrane Library were searched up to April ... AIM:To evaluate the efficacy,safety and influential factors of proton pump inhibitor(PPI)treatment for non-erosive reflux disease(NERD).METHODS:PubMed,MEDLINE,EMBASE and the Cochrane Library were searched up to April 2013 to identify eligible randomized controlled trials(RCTs)that probed into the efficacy,safety and influential factors of PPI treatment for NERD.The rates of symptomatic relief and adverse events were measured as the outcomes.After RCT selection,assessment and data collection,the pooled RRs and 95%CI were calculated.This meta-analysis was performed using the Stata 12.0 software(Stata Corporation,College Station,Texas,United States).The level of evidence was estimated by the Grading of Recommendations Assessment,Development and Evaluation system.RESULTS:Seventeen RCTs including 6072 patients met the inclusion criteria.The results of the metaanalysis showed that PPI treatment was significantly superior to H2receptor antagonists(H2RA)treatment(RR=1.629,95%CI:1.422-1.867,P=0.000)and placebo(RR=1.903,95%CI:1.573-2.302,P=0.000)for the symptomatic relief of NERD.However,there were no obvious differences between PPI and H2RA(RR=0.928,95%CI:0.776-1.110,P=0.414)or PPI and the placebo(RR=1.000,95%CI:0.896-1.116,P=0.997)regarding the rate of adverse events.The overall rate of symptomatic relief of PPI against NERD was 51.4%(95%CI:0.433-0.595,P=0.000),and relief was influenced by hiatal hernia(P=0.030).The adverse rate of PPI against NERD was 21.0%(95%CI:0.152-0.208,P=0.000),and was affected by hiatal hernia(P=0.081)and drinking(P=0.053).CONCLUSION:PPI overmatched H2RA on symptomatic relief rate but not on adverse rate for NERD.Its relief rate and adverse rate were influenced by hiatal hernia and drinking. 展开更多
关键词 proton pump inhibitor Non-erosive REFLUX disease SYMPTOMATIC RELIEF ADVERSE event META-ANALYSIS
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质子单粒子试验技术及其应用
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作者 张艳文 郭刚 +3 位作者 韩金华 殷倩 张峥 刘翠翠 《现代应用物理》 2024年第4期124-129,共6页
随着半导体工艺的发展,小尺寸电子元器件临界电荷降低,对质子单粒子效应越来越敏感,为确保其运行可靠性,有必要基于地面加速器进行质子单粒子效应模拟试验验证。通过中国、美国及欧洲等国家典型中高能质子单粒子效应地面模拟试验技术的... 随着半导体工艺的发展,小尺寸电子元器件临界电荷降低,对质子单粒子效应越来越敏感,为确保其运行可靠性,有必要基于地面加速器进行质子单粒子效应模拟试验验证。通过中国、美国及欧洲等国家典型中高能质子单粒子效应地面模拟试验技术的总结对比,系统梳理了地面模拟试验包含的若干关键技术,主要包括降束技术、扩束技术、降能技术、束流测量技术和束流收集技术等若干关键技术。基于中国原子能科学研究院100 MeV质子辐照装置开展了升级建设,为我国在建的中高能质子单粒子效应模拟试验装置提供技术支撑,促进国内中高能质子单粒子效应模拟试验技术平台的发展,保障航空航天电子设备的安全可靠性。 展开更多
关键词 质子 单粒子效应 加速器 试验技术
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怀柔质子/电子加速器设施典型辐射效应测试及应用进展
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作者 李宏伟 韩建伟 +7 位作者 蔡明辉 马英起 韩瑞龙 陶孟泽 寇彬 胡紫楠 张龙龙 徐振宇 《现代应用物理》 2024年第4期70-80,共11页
地面模拟试验是空间辐射环境效应研究的重要内容,也是分析测试评估和解决航天工程中辐射环境效应问题的关键和重要基础。针对中高轨卫星面临的突出的内部与深层充放电效应问题和空间科学系列卫星中选用的高性能光电部件与高性能科学载... 地面模拟试验是空间辐射环境效应研究的重要内容,也是分析测试评估和解决航天工程中辐射环境效应问题的关键和重要基础。针对中高轨卫星面临的突出的内部与深层充放电效应问题和空间科学系列卫星中选用的高性能光电部件与高性能科学载荷面临的空间辐射效应问题,中国科学院国家空间科学中心近年来在怀柔先后建立了怀柔5 MeV电子直线加速器设施和怀柔50 MeV质子回旋加速器设施。本文对上述设施的技术特点和能力指标等进行简单介绍,并在此基础上对基于上述装置开展的典型和特色空间辐射环境效应进行介绍。 展开更多
关键词 空间辐射环境效应 电子加速器 质子加速器 单粒子效应 充放电效应
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不同能量质子辐照CMOS图像传感器的单粒子瞬态效应研究
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作者 李钰 文林 郭旗 《现代应用物理》 2024年第3期112-119,共8页
针对空间环境宽能谱质子辐射导致的CMOS图像传感器单粒子效应问题,开展了不同能量质子辐照试验,研究了质子辐照导致CMOS图像传感器单粒子效应的异常现象、图像特征及参数性能变化规律。试验表明,质子辐照主要导致CMOS图像传感器出现明... 针对空间环境宽能谱质子辐射导致的CMOS图像传感器单粒子效应问题,开展了不同能量质子辐照试验,研究了质子辐照导致CMOS图像传感器单粒子效应的异常现象、图像特征及参数性能变化规律。试验表明,质子辐照主要导致CMOS图像传感器出现明显的单粒子瞬态(single event transient,SET)效应现象,包括SET亮斑和亮线。通过对比不同条件下的试验结果,分析了质子能量、积分时间等变化对SET亮斑覆盖像素情况、信号水平的影响规律,并结合TCAD仿真工具,分析了SET亮斑的产生机制。研究结果表明:SET亮斑灰度水平和覆盖像素数目均随辐照质子能量增加而增大;SET亮斑覆盖像素最大灰度值、平均灰度值随CMOS图像传感器积分时间增加而增大,通过调节CMOS图像传感器的积分时间,可以明显改变SET亮斑的特征和器件成像性能;从TCAD软件仿真的微观物理过程获得了SET亮斑随积分时间变化的机制,支持了对试验结果的分析和判断。研究结果可为CMOS图像传感器空间辐射效应评估、抗辐射加固提供试验和理论参考。 展开更多
关键词 质子辐照 空间环境 CMOS图像传感器 单粒子效应 瞬态效应
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神经网络方法在太阳质子事件短期预报中的应用 被引量:9
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作者 龚建村 薛炳森 +3 位作者 刘四清 邹自明 苗娟 王家龙 《空间科学学报》 CAS CSCD 北大核心 2003年第6期443-451,共9页
在大量统计结果的基础上,深入研究了太阳质子事件预报机理.总结了质子事件爆发与太阳活动区面积、位置、McIntosh结构、磁结构以及前两天活动区爆发耀斑事件数目之间的关系.然后,在神经网络的基础上建立了太阳质子事件短期预报模型,并对... 在大量统计结果的基础上,深入研究了太阳质子事件预报机理.总结了质子事件爆发与太阳活动区面积、位置、McIntosh结构、磁结构以及前两天活动区爆发耀斑事件数目之间的关系.然后,在神经网络的基础上建立了太阳质子事件短期预报模型,并对2000年以后12个未参加训练的样本进行测试,结果对事件预报的准确率为83%.此外,我们还利用该模型对2002年1-4月发生的几次质子事件进行了预报试验,结果发现,这期间发生的6次事件都被预报.其中3次质子事件系统预报提前了3天,两次事件预报提前了2天,一次事件提前1天预报. 展开更多
关键词 神经网络方法 太阳质子事件 短期预报 McIntosh结构 磁结构 太阳耀斑
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2001年4月2日太阳耀斑及其太阳质子事件的观测结果研究 被引量:10
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作者 马宇倩 王焕玉 +12 位作者 张承模 徐玉朋 汪锦州 唐仕奎 梁晓华 徐霁舒 肖佐 邹鸿 郝永强 张东和 邹积清 仲维英 吴中祥 《地球物理学报》 SCIE EI CAS CSCD 北大核心 2004年第5期737-742,共6页
20 0 1年 4月 2日 ,太阳爆发了一个近年来X射线通量最大的一次耀斑并伴有质子事件 ,利用“资源一号”卫星星内粒子探测器和神舟二号飞船X射线探测器的观测资料 ,对这一事件的高能粒子响应进行了特例研究 .“资源一号”卫星运行于太阳同... 20 0 1年 4月 2日 ,太阳爆发了一个近年来X射线通量最大的一次耀斑并伴有质子事件 ,利用“资源一号”卫星星内粒子探测器和神舟二号飞船X射线探测器的观测资料 ,对这一事件的高能粒子响应进行了特例研究 .“资源一号”卫星运行于太阳同步轨道 ,高度约 80 0km ,和宁静时期的统计结果对比 ,这次耀斑后 ,星内粒子探测器在地球极盖区 (地球开磁场区 )观测到耀斑粒子的出现 ,这是宁静时期没有的 ;神舟二号飞船轨道高度 4 0 0km ,倾角为 4 2° ,X射线探测器在 4 2°中高纬地区也观测到高能电子通量比宁静时明显的增加 ,这表明 ,太阳耀斑引起的近地空间辐射环境的变化遍及纬度约 4 0°以上的区域 ,甚至在 4 0°N附近 4 0 0km左右的高度上仍然有响应 .但是 ,中高纬度、极光带和极盖区的粒子来源 ,加速机制和响应方式却不一定相同 ,需要分别讨论 .资料分析和对比还表明 ,质子事件的强度并不一定和耀斑的X射线通量成正比 ,因此 。 展开更多
关键词 太阳质子事件 太阳耀斑 X射线探测器 高能粒子探测器
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太阳质子事件警报 被引量:7
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作者 胡雄 黄泽荣 +3 位作者 张训械 龚建村 薛丙森 叶宗海 《空间科学学报》 CAS CSCD 北大核心 1998年第4期323-328,共6页
采用人工神经网络预报方法,利用太阳耀斑的日面位置、X射线辐射的峰值流量及其上升时间、2695MHz和8800MHz微波辐射的半积分流量等5个物理参量,提出了一个新的太阳质子事件警报方案,预报太阳质子事件的发生及其流量和时间.该方案在... 采用人工神经网络预报方法,利用太阳耀斑的日面位置、X射线辐射的峰值流量及其上升时间、2695MHz和8800MHz微波辐射的半积分流量等5个物理参量,提出了一个新的太阳质子事件警报方案,预报太阳质子事件的发生及其流量和时间.该方案在本文检验中达到93.75%的预报准确率. 展开更多
关键词 太阳质子事件 警报 人工神经网络 太阳耀斑
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“资源一号”卫星星内粒子探测器对扰动事件的观测 被引量:7
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作者 邹鸿 肖佐 +5 位作者 郝永强 邹积清 仲维英 吴中祥 向宏文 朱文明 《地球物理学报》 SCIE EI CAS CSCD 北大核心 2006年第3期636-641,共6页
本文比较了在太阳平静和扰动时期“资源一号”卫星星内粒子探测器对卫星舱内高能粒子的观测结果,发现在平静时期观测结果很好地反映了辐射带高能粒子在该高度上的分布情况.在扰动时期,粒子探测器观测到高能粒子分布出现重大变化,本文进... 本文比较了在太阳平静和扰动时期“资源一号”卫星星内粒子探测器对卫星舱内高能粒子的观测结果,发现在平静时期观测结果很好地反映了辐射带高能粒子在该高度上的分布情况.在扰动时期,粒子探测器观测到高能粒子分布出现重大变化,本文进一步讨论了影响高能粒子在近地空间分布的可能因素. 展开更多
关键词 星内粒子探测器 太阳质子事件 外带电子突增事件 辐射带 “资源一号”卫星
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静态随机存取存储器质子单粒子效应实验研究 被引量:12
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作者 贺朝会 杨海亮 +4 位作者 耿斌 陈晓华 李国政 刘恩科 罗晋生 《核电子学与探测技术》 EI CAS CSCD 北大核心 2000年第4期253-257,共5页
描述了测量静态随机存取存储器质子单粒子翻转截面的实验方法。采用金箔散射法可以降低加速器质子束流五六个量级 ,从而满足半导体器件质子单粒子效应的要求。研制的弱流质子束流测量系统和建立的注量均匀性测量方法解决了质子注量的准... 描述了测量静态随机存取存储器质子单粒子翻转截面的实验方法。采用金箔散射法可以降低加速器质子束流五六个量级 ,从而满足半导体器件质子单粒子效应的要求。研制的弱流质子束流测量系统和建立的注量均匀性测量方法解决了质子注量的准确测量问题。提高了存储器单粒子效应长线测量系统的性能 ,保证了翻转数的准确测量。实验测得静态随机存取存储器质子单粒子翻转截面为 1 0 - 1 4 cm2 / bit量级 ,随质子能量的增大略有增大。 展开更多
关键词 静态随机存取存储器 质子 单粒子效应 束流测量
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FY2D卫星与GOES卫星空间粒子观测结果的对比分析 被引量:7
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作者 王馨悦 王春琴 +1 位作者 杨晓超 王世金 《地球物理学报》 SCIE EI CAS CSCD 北大核心 2008年第3期611-617,共7页
风云二号D星(FY2D)搭载的空间粒子探测器可以观测10~300MeV的质子和≥350keV与≥2MeV的电子.卫星在轨测试阶段,空间粒子探测器观测到了空间环境宁静期间地球同步轨道的电子昼夜周期变化的典型特征,并在卫星发射后的12月15日首次观测到... 风云二号D星(FY2D)搭载的空间粒子探测器可以观测10~300MeV的质子和≥350keV与≥2MeV的电子.卫星在轨测试阶段,空间粒子探测器观测到了空间环境宁静期间地球同步轨道的电子昼夜周期变化的典型特征,并在卫星发射后的12月15日首次观测到了有代表性的2级太阳质子事件(SEP),观测到的较高能量质子比较低能量质子更快地恢复到平静时的状态.通过比较FY2D卫星与GOES卫星的探测结果,既显示了同步轨道区域不同位置高能电子通量扰动时间的一致性,也显示了高能电子通量具强烈的晨昏不对称性.通过对太阳质子事件和地磁平静时期该轨道空间高能粒子环境特征的分析和研究,并与GOES卫星同期的观测结果进行相关性分析,结果表明仪器确实具备了监测空间环境扰动和预警能力,探测结果可以用于研究地球同步轨道粒子空间分布、起源和传输等科学目的. 展开更多
关键词 空间粒子探测器 地球同步轨道 高能质子 高能电子 太阳质子事件
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太阳宇宙线的行星际扰动 被引量:6
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作者 黄永年 王志丹 汪学毅 《地球物理学报》 SCIE EI CAS CSCD 北大核心 1998年第2期149-155,共7页
研究了太阳宇宙线在日冕区的横向传播特性,提出了具有扩散和逃逸过程的日冕分布粒子源,求出了含有该粒子源的行星际传输有源方程的解,并利用IMP-8,Helios-1和Helios-2观测到的同一事件不同空间位置的耀斑粒子资料对模型作了检验.
关键词 太阳 质子事件 行星际扰动 传播模型 宇宙线
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