Simulation of multilayer Cu/Pd（100） heteroepitaxial growth by pulse laser deposition

The heteroepitaxial growth of multilayer Cu/Pd（100） thin film via pulse laser deposition （PLD） at room temperature is simulated by using kinetic Monte Carlo （KMC） method with realistic physical parameters. The effects of mass transport between interlayers, edge diffusion of adatoms along the islands and instantaneous deposition are considered in the simulation model, Emphasis is placed on revealing the details of multilayer Cu/Pd（100） thin film growth and estimating the Ehrlich-Schwoebel （ES） barrier. It is shown that the instantaneous deposition in the PLD growth gives rise to the layer-by-layer growth mode, persisting up to about 9 monolayers （ML） of Cu/Pd（100）. The ES barriers of 0.08 ± 0.01 eV is estimated by comparing the KMC simulation results with the real scanning tunnelling microscopy （STM） measurements,

Pulse Laser Deposition of HfO_(2)Nanoporous-Like Structure,Physical Properties for Device Fabrication

The pulsed laser deposition(PLD)technology was used to effectively create conductive nano and micro hafnium oxide with great purity and transparency for(HfO_(2))nanofilms.In many optoelectronics devices and their applications,the presence of a high dielectric substance like a nano HfO2,between the metal contacts and the substrates was critical.We used the Pulsed Laser Deposition method to fabricate an Al/HfO_(2)/p-Si Schottky barrier diode where the nanostructured HfO2 films as an intermediate layer and varied substrate temperatures.The optical result reveals a high degree of transparency(93%).The optical bandgap of deposited HfO2 films was observed to vary between 4.9 and 5.3 eV,with a value of roughly 5.3 eV at the optimal preparation condition.The morphology of the surface shows a high homogeneous nano structure with the average values of the roughness about(0.3 nm).With regard to substrate temperature,the produced factor ideality for fabricated diode was determined to be lowering and the associated values of the barrier height rose based on I-Vcharacterization.With regard to substrate temperature,the produced factor ideality for fabricated diode was determined to be lowering and the associated values of the barrier height rose based on I-V characterization.The diode manufactured at 600℃,in particular,had a higher ideality factor value(n=3.2).

Structural and Surface Morphology Analysis of Copper Phthalocyanine Thin Film Prepared by Pulsed Laser Deposition and Thermal Evaporation Techniques

In the present paper, Copper Phthalocyanine (CuPc) thin films were deposited on glass and silicon substrate by thermal evaporation and pulsed laser deposition (PLD) methods. CuPc thin films prepared at different annealing temperatures (298, 323, 348, 373, 423 K) respectively. The structure and surface morphology of CuPc in powder and thin films forms prepared by two methods were studied using Energy dispersive X-ray (EDX), X-ray f§lt;span§gt;lorescence (XRF), X-ray§lt;/span§gt;diffraction (XRD), Atomic force microscope (AFM), and Scanning electron microscope (SEM). It showed that there was a change and enhancement in the crystallinity and surface morphology due to change in the annealing temperature (T§lt;sub§gt;a§lt;/sub§gt;). The purpose of our work is to find the optimal temperature for which the film produces best structural properties for CuPc thin film to produce organic field effect transistor. Analysis of X-ray diffraction patterns of CuPc in powder form showed that it had an α-poly-crystalline phase with monoclinic structure, with preferentially oriented (100) plane transform to §lt;i§gt;β§lt;/i§gt;-single crystalline morestable structure at different annealing temperatures.

Pulsed Laser Deposition ZnS Buffer Layers for CIGS Solar Cells

Polycrystalline ZnS films were prepared by pulsed laser deposition （PLD） on quartz glass substrates under different growth conditions at different substrate temperatures of 20, 200, 400, and 600 ℃, which is a suitable alternative to chemical bath deposited （CBD） CdS as a buffer layer in Cu（In,Ga）Se2 （CIGS） solar cells. X-ray diffraction studies indicate the films are polycrystalline with zinc-blende structure and they exhibit preferential orientation along the cubic phase β-ZnS （111） direction, which conflicts with the conclusion of wurtzite structure by Murali that the ZnS films deposited by pulse plating technique was polycrystalline with wurtzite structure. The Raman spectra of grown films show Al mode at approximately 350 cm^-1, generally observed in the cubic phase β-ZnS compounds. The planar and the cross-sectional morphology were observed by scanning electron microscopic. The dense, smooth, uniform grains are formed on the quartz glass substrates through PLD technique. The grain size of ZnS deposited by PLD is much smaller than that of CdS by conventional CBD method, which is analyzed as the main reason of detrimental cell performance. The composition of the ZnS films was also measured by X-ray fluorescence. The typical ZnS films obtained in this work are near stoichiometric and only a small amount of S-rich. The energy band gaps at different temperatures were obtained by absorption spectroscopy measurement, which increases from 3.2 eV to 3.7 eV with the increasing of the deposition temperature. ZnS has a wider energy band gap than CdS （2.4 eV）, which can enhance the blue response of the photovoltaic cells. These results show the high-quality of these substitute buffer layer materials are prepared through an all-dry technology, which can be used in the manufacture of CIGS thin film solar cells.

Multifunctional hopeite nanocoating on Ti64 substrates by pulsed laser deposition and radio frequency magnetron sputtering for orthopedic implant applications:A comparative study

Functionalized implants demonstrate an upgraded approach in orthopedic implants,aiming to achieve long term success through improved bio integration.Bioceramic coatings with multifunctionality have arisen as an effective substitute for conventional coatings,owing to their combination of various properties that are essential for bio-implants,such as osteointegration and antibacterial character.In the present study,thin hopeite coatings were produced by Pulsed laser deposition(PLD)and radio frequency magnetron sputtering(RFMS)on Ti64 substrates.The obtained hopeite coatings were annealed at 500°C in ambient air and studied in terms of surface morphology,phase composition,surface roughness,adhesion strength,antibacterial efficacy,apatite forming ability,and surface wettability by scanning electron microscope(SEM),X-ray diffraction(XRD),atomic force microscope(AFM),tensometer,fluorescence-activated cell sorting(FACS),simulated body fluid(SBF)immersion test and contact angle goniometer,respectively.Furthermore,based on promising results obtained in the present work it can be summarized that the new generation multifunctional hopeite coating synthesized by two alternative new process routes of PLD and RFMS on Ti64 substrates,provides effective alternatives to conventional coatings,largely attributed to strong osteointegration and antibacterial character of deposited hopeite coating ensuring the overall stability of metallic orthopedic implants.

Tribological properties of diamond-like carbon films deposited bv pulsed laser arc deposition

A novel method, pulsed laser arc deposition combining the advantages of pulsed laser deposition and cathode vacuum arc techniques, was used to deposit the diamond-like carbon （DLC） nanofilms with different thicknesses. Spectroscopic ellipsometer, Auger electron spectroscopy, x-ray photoelectron spectroscopy, Raman spectroscopy, atomic force microscopy, scanning electron microscopy and multi-functional friction and wear tester were employed to investigate the physical and tribological properties of the deposited films. The results show that the deposited films are amorphous and the sp2, sp3 and C-O bonds at the top surface of the films are identified. The Raman peak intensity and surface roughness increase with increasing film thickness. Friction coefficients are about 0.1, 0.15, 0.18, when the film thicknesses are in the range of 17-21 nm, 30-57 nm, 67-123 nm, respectively. This is attributed to the united effects of substrate and surface roughness. The wear mechanism of DLC films is mainly abrasive wear when film thickness is in the range of 17-41 nm, while it transforms to abrasive and adhesive wear, when the film thickness lies between 72 and 123 nm.

High temperature thermoelectric properties of highly c-axis oriented Bi_2Sr_2Co_2O_y thin films fabricated by pulsed laser deposition

High-temperature thermoelectric transport property measurements have been performed on the highly c-axis oriented Bi2Sr2Co20v thin films prepared by pulsed laser deposition on LaA1Oa （001）. Both the electric resistivity p and the seebeck coefficient S of the film exhibit an increasing trend with the temperature from 300 K-1000 K and reach up to 4.8 m. cm and 202 V/K at 980 K, resulting in a power factor of 0.85 mW/mK which are comparable to those of the single crystalline samples. A small polaron hopping conduction can be responsible for the conduction mechanism of the film at high temperature. The results demonstrate that the Bi2Sr2Co2Oy thin film has potential application has high temperature thin film thermoelectric devices,

Growth properties of gallium oxide on sapphire substrate by plasma-assisted pulsed laser deposition

Gallium oxide was deposited on a c-plane sapphire substrate by oxygen plasma-assisted pulsed laser deposition(PLD).An oxygen radical was generated by an inductive coupled plasma source and the effect of radio frequency(RF)power on growth rate was investigated.A film grown with plasma assistance showed 2.7 times faster growth rate.X-ray diffraction and Raman spectroscopy analysis showedβ-Ga2 O3 films grown with plasma assistance at 500℃.The roughness of the films decreased when the RF power of plasma treatment increased.Transmittance of these films was at least 80%and showed sharp absorption edge at 250 nm which was consistent with data previously reported.

Properties of multilayer gallium and aluminum doped ZnO(GZO/AZO) transparent thin films deposited by pulsed laser deposition process

Multilayer gallium and aluminum doped ZnO （GZO/AZO） films were fabricated by alternative deposition of Ga-doped zinc oxide（GZO） and Al-doped zinc oxide（AZO） thin film by using pulsed laser deposition（PLD） process. The electrical and optical properties of these GZO/AZO thin films were investigated and compared with those of GZO and AZO thin films. The GZO/AZO （1：1） thin film deposited at 400 ~C shows the electrical resistivity of 4.18 x 10 4 ~.cm, an electron concentration of 7.5 x 1020/cm3, and carrier mobility of 25.4 cm2/（V.s）. The optical transmittances of GZO/AZO thin films are over 85%. The optical band gap energy of GZO/AZO thin films linearly decreases with increasing the AI ratio.

Optimization of large-area YBa_(2)Cu_(3)O_(7-δ)thin films by pulsed laser deposition for planar microwave devices

This paper presents high quality YBa_(2)Cu_(3)O_(7-δ)(YBCO)thin films on LaAlO_(3)substrate for microwave devices prepared by pulsed laser deposition(PLD).The double-sided YBCO films cover a large area and have been optimized for key parameters relevant to microwave device applications,such as surface morphology and surface resistance(R_(s)).This was achieved by improving the target quality and increasing the oxygen pressure during deposition,respectively.To evaluate the suitability of the YBCO films for microwave devices,a pair of microwave filters based on microstrip fabricated on films from this work and a commercial company were compared.The results show that the YBCO films in this work could completely meet the requirements for microwave devices.

Microstructure,optical,and photoluminescence properties ofβ-Ga_(2)O_(3)films prepared by pulsed laser deposition under different oxygen partial pressures

Theβ-Ga_(2)O_(3)films are prepared on polished Al_(2)O_(3)(0001)substrates by pulsed laser deposition at different oxygen partial pressures.The influence of oxygen partial pressure on crystal structure,surface morphology,thickness,optical properties,and photoluminescence properties are studied by x-ray diffraction(XRD),atomic force microscope(AFM),scanning electron microscope(SEM),spectrophotometer,and spectrofluorometer.The results of x-ray diffraction and atomic force microscope indicate that with the decrease of oxygen pressure,the full width at half maximum(FWHM)and grain size increase.With the increase of oxygen pressure,the thickness of the films first increases and then decreases.The room-temperature UV-visible(UV-Vis)absorption spectra show that the bandgap of theβ-Ga_(2)O_(3)film increases from4.76 e V to 4.91 e V as oxygen pressure decreasing.Room temperature photoluminescence spectra reveal that the emission band can be divided into four Gaussian bands centered at about 310 nm(~4.0 e V),360 nm(~3.44 e V),445 nm(~2.79 e V),and 467 nm(~2.66 e V),respectively.In addition,the total photoluminescence intensity decreases with oxygen pressure increasing,and it is found that the two UV bands are related to self-trapped holes(STHs)at O1 sites and between two O2-s sites,respectively,and the two blue bands originate from V_(Ga)^(2-)at Ga1 tetrahedral sites.The photoluminescence mechanism of the films is also discussed.These results will lay a foundation for investigating the Ga_(2)O_(3)film-based electronic devices.

Cubic AlN thin film formation on quartz substrate by pulse laser deposition

Cubic AlN thin films were obtained on quartz substrate by pulse laser deposition in a nitrogen reactive atmosphere.A Nd-YAG laser with a wavelength of 1064 nm was used as the laser source.In order to study the influence of the process parameters on the deposited AlN film,the experiments were performed at various technique parameters of laser energy density from 70 to 260 J/cm^2,substrate temperature from room temperature to 800℃and nitrogen pressure from 0.1 to 50 Pa.X-ray diffraction,scanning electron microscopy and X-ray photoelectron spectroscopy were applied to characterize the structure and surface morphology of the deposited AlN films.It was found that the structure of AlN films deposited in a vacuum is rocksalt under the condition of substrate temperature600-800 ℃,nitrogen pressure 10-0.1 Pa and a moderate laser energy density（190 J/cm^2）.The high quality AlN film exhibited good optical property.

Comprehensive Optimization of Electrical and Optical Properties for ATO Films Prepared by Pulsed Laser Deposition

Antimony doped tin oxide（ATO） thin films have been prepared by pulsed laser deposition（PLD） method.The intrinsic effect of Sb dopant,including the Sb content,transition degree between Sb（3＋） and Sb（5＋） and crystallinity on the electrical and optical properties of the ATO thin films is mainly investigated.It is suggested that the transition degree of Sb（3＋） towards Sb（5＋）（Sb（5＋）/Sb（3＋） ratio） is determined by Sb content.When the Sb content is increased to 12 at%,the Sb（5＋）/Sb（3＋） ratio reaches the highest value of 2.05,corresponding to the resistivity of 2.70×10（-3） Ω·cm.Meanwhile,the Burstein-Moss effect caused by the increase of carrier concentration is observed and the band gap of the ATO thin films is broadened to 4.0 eV when the Sb content is increased to 12 at%,corresponding to the highest average optical transmittance of 92%.Comprehensively considering the combination of electrical and optical properties,the ATO thin films deposited with Sb content of 12 at%exhibit the best properties with the highest ＂figure of merit＂ of 3.85×10（-3） Ω（-1）.Finally,an antimony selenide（Sb_2Se_3） heterojunction solar cell prototype with the ATO thin film as the anode has been prepared,and a power conversion efficiency of 0.83%has been achieved.

Electrical and magnetic properties of ZnNiO thin films deposited by pulse laser deposition

ZnNiO thin films with different contents of Ni(0-10 at.%) were fabricated on quartz and Si(100) substrates by pulsed laser deposition(PLD).We measured the samples by X-ray diffraction(XRD),field-emission scanning electron microscope(FE-SEM),X-ray photoelectron spectroscopy(XPS),ultraviolet-visible spectrometer(UV-VIS),and Hall testing.When the Ni contents were below 3 at.%,partial Zn2+ ions were replaced by the Ni2+ ions without forming any other phases,which enhanced the conductivity of the film.When the Ni contents were above 3 at.%,Ni ions were at the interstitial sites,and Ni-related clusters and defects were able to emerge in the films,resulting in a worsening of electrical and optical properties.A ferromagnetic hysteresis with a coercive force of approximately 30 Oe was observed in the ZnNiO film with a Ni content of 3 at.% at room temperature.

Preparation of Highly Textured Bi and MnBi Films by the Pulsed Laser Deposition Method

Textured Bi and MnBi/Bi thin films are prepared by the pulsed laser deposition method. The highly c-axis textured MnBi films are obtained by annealing the bilayer consisting of textured Bi and Mn films. The eoercivities of the MnBi/Bi film are 1.5 T and 2.35 T at room temperature and at 373K, respectively, showing a positive temperature coefficient. Microstructural investigations show that the textured MnBi film results from the orientated growth induced by the textured Bi under-layer.

STRUCTURE AND SURFACE STUDIES OF Mg_xZn_(1-x)O FILMS GROWN BY PULSED LASER DEPOSITION

The structural and surface properties of high-quality epitaxial cubic MgxZn1-xO films deposited by pulsed laser deposition (PLD) were studied by X-ray diffracti on and atomic force microscopy respectively. For films of about 500nm thick, sca ns over a 30μm × 30μm area revealed a surface roughness Ra of about 100nm. Th is relatively large surface roughness is primarily attributed to the particulate and outgrowth during the PLD process. A good epitaxial growth on LaAlO3 (LAO ) (100) substrates, however has been obtained for composition x = 0.9, 0.7 and 0 .5 with the heteroepitaxial relationship of (100)■∥(100)LAO (out-of-plane) and (011)■∥(010)LAO (in-plane). These structural qualities suggest that cubic Mgx Zn1-xO alloys films have good potential in a variety of optoelectronic device ap plications.

Growth of High-Quality Superconducting FeSe0.5Te0.5 Thin Films Suitable for Angle-Resolved Photoemission Spectroscopy Measurements via Pulsed Laser Deposition

High-quality superconducting FeSe0.5 Te0.5 films are epitaxiMly grown on different substrates by using the pulsed laser deposition method. By measuring the transport properties and surface morphology of films grown on single- crystal substrates of Al2O3 （0001）, SrTiO3 （001）, and MgO （001）, as well as monitoring the real-time growth process on MgO substrates with reflection high energy electron diffraction, we find the appropriate parameters for epitaxial growth of high-quality FeSe0.5 Te0.5 thin films suitable for angle-resolved photoemission spectroscopy measurements. We further report the angle-resolved photoemission spectroscopy characterization of the super- conducting films. The clearly resolved Fermi surfaces and the band structure suggest a sample quality that is as good as that of high-quality single-crystals, demonstrating that the pulsed laser deposition method can serve as a promising technique for in situ preparation and manipulation of iron-based superconducting thin films, which may bring new prosperity to angle-resolved photoemission spectroscopy research on iron-based superconductors.

Low temperature Raman study of PrCoO_3 thin films on LaAlO_3(100) substrates grown by pulsed laser deposition

Thin films of PrCoO3 were deposited on LaAlO3 substrates by pulsed laser deposition technique.X-ray diffraction result indicates that films are single phase and c-axis textured.To investigate the spin state transition,Raman spectroscopy measurements were performed at different temperatures.The position of the Raman modes is found to increase while full width at half maximum(FWHM) of these modes is found to decrease with the decrease of temperature across spin state transition temperature(220 K) of PrCoO3.

Pulsed Laser Deposition of Boron Carbon Nitride Coatings

oron carbon nitride coatings were synthesized using the pulsed laser deposition method. The hardness of the coatings was measured by a Vickers microhardness tester. It was found that the hardness of the coatings was between 15.45 and 34.05 GPa under a load of 0.5 N. The surface morphology was studied by optical microscopy and atomic force microscopy. There were spherical and irregular shaped particulates in the coatings. The density of the spherical particles was found being increased at high deposition temperatures. The rootmeansquared surface roughness of the coatings was about 4 nm.

Comparison of ZnO Films Grown on before- and after-vapor Transport Equilibration (VTE) LiAlO_2 Substrates by Pulsed Laser Deposition (PLD)

About φ45 mm LiAlO2 single crystal was grown by Czochralski （Cz） technique. However, the full-width at half-maximum （FWHM） value was high to 116.9 arcsec. After three vapor transport equilibration （VTE） processes, we can obtain high-quality LiAlO2 slice with the FWHM value of 44.2 arcsec. ZnO films were fabricated on as-grown slices and after-VTE ones by pulsed laser deposition （PLD）. It was found that ZnO films on the two slices have similar crystallinity, optical transmittance and optical band gap at room temperature. These results not only show that LAO substrate is suitable for ZnO growth, but also prove that the crystal quality of LAO substrate slightly affects the structural and optical properties of ZnO film.