Electrokinetic-mechanism of water and furfural oxidation on pulsed laser-interlaced Cu_(2)O and CoO on nickel foam

The electrocatalytic oxidation of biomass-derived furfural(FF)feedstocks into 2-furoic acid(FA)holds immense industrial potential in optics,cosmetics,polymers,and food.Herein,we fabricated Co O/Ni O/nickel foam(NF)and Cu_(2)O/Ni O/NF electrodes via in situ pulsed laser irradiation in liquids(PLIL)for the bifunctional electrocatalysis of oxygen evolution reaction(OER)and furfural oxidation reaction(FOR),respectively.Simultaneous oxidation of NF surface to NiO and deposition of CoO and/or Cu_(2)O on NF during PLIL offer distinct advantages for enhancing both the OER and FOR.CoO/NiO/NF electrocatalyst provides a consistently low overpotential of~359 m V(OER)at 10 m A/cm^(2),achieving the maximum FA yield(~16.37 m M)with 61.5%selectivity,79.5%carbon balance,and a remarkable Faradaic efficiency of~90.1%during 2 h of FOR at 1.43 V(vs.reversible hydrogen electrode).Mechanistic pathway via in situ electrochemical-Raman spectroscopy on CoO/NiO/NF reveals the involvement of phase transition intermediates(NiOOH and CoOOH)as surface-active centers during electrochemical oxidation.The carbonyl carbon in FF is attacked by hydroxyl groups to form unstable hydrates that subsequently undergo further oxidation to yield FA products.This method holds promise for large-scale applications,enabling simultaneous production of renewable building materials and fuel.

Pulsed laser interference patterning of transition-metal carbides for stable alkaline water electrolysis kinetics

We investigated the role of metal atomization and solvent decomposition into reductive species and carbon clusters in the phase formation of transition-metal carbides(TMCs;namely,Co_(3)C,Fe_(3)C,TiC,and MoC)by pulsed laser ablation of Co,Fe,Ti,and Mo metals in acetone.The interaction between carbon s-p-orbitals and metal d-orbitals causes a redistribution of valence structure through charge transfer,leading to the formation of surface defects as observed by X-ray photoelectron spectroscopy.These defects influence the evolved TMCs,making them effective for hydrogen and oxygen evolution reactions(HER and OER)in an alkaline medium.Co_(3)C with more oxygen affinity promoted CoO(OH)intermediates,and the electrochemical surface oxidation to Co_(3)O_(4)was captured via in situ/operando electrochemical Raman probes,increasing the number of active sites for OER activity.MoC with more d-vacancies exhibits strong hydrogen binding,promoting HER kinetics,whereas Fe_(3)C and TiC with more defect states to trap charge carriers may hinder both OER and HER activities.The results show that the assembled membrane-less electrolyzer with Co_(3)C∥Co_(3)C and MoC∥MoC electrodes requires~2.01 and 1.99 V,respectively,to deliver a 10 mA cm−2 with excellent electrochemical and structural stability.In addition,the ascertained pulsed laser synthesis mechanism and unit-cell packing relations will open up sustainable pathways for obtaining highly stable electrocatalysts for electrolyzers.

Sensitivity study of the SiGe heterojunction bipolar transistor single event effect based on pulsed laser and technology computer-aided design simulation

The single event effect of a silicon–germanium heterojunction bipolar transistor(SiGe HBT) was thoroughly investigated. By considering the worst bias condition, the sensitive area of the proposed device was scanned with a pulsed laser.With variation of the collector bias and pulsed laser incident energy, the single event transient of the SiGe HBT was studied.Moreover, the single event transient produced by laser irradiation at a wavelength of 532 nm was more pronounced than at a wavelength of 1064 nm. Finally, the impact of the equivalent linear energy transfer of the 1064 nm pulsed laser on the single event transient was qualitatively examined by performing technology computer-aided design simulations, and a good consistency between the experimental data and the simulated outcomes was attained.

Optimization of large-area YBa_(2)Cu_(3)O_(7-δ)thin films by pulsed laser deposition for planar microwave devices

This paper presents high quality YBa_(2)Cu_(3)O_(7-δ)(YBCO)thin films on LaAlO_(3)substrate for microwave devices prepared by pulsed laser deposition(PLD).The double-sided YBCO films cover a large area and have been optimized for key parameters relevant to microwave device applications,such as surface morphology and surface resistance(R_(s)).This was achieved by improving the target quality and increasing the oxygen pressure during deposition,respectively.To evaluate the suitability of the YBCO films for microwave devices,a pair of microwave filters based on microstrip fabricated on films from this work and a commercial company were compared.The results show that the YBCO films in this work could completely meet the requirements for microwave devices.

Exploration of growth conditions of TaAs Weyl semimetal thin film using pulsed laser deposition

Ta As,the first experimentally discovered Weyl semimetal material,has attracted a lot of attention due to its high carrier mobility,high anisotropy,nonmagnetic properties and strong interaction with light.These make it an ideal candidate for the study of Weyl fermions and applications in quantum computation,thermoelectric devices,and photodetection.For further basic physics studies and potential applications,large-size and high-quality Ta As films are urgently needed.However,it is difficult to grow As-stoichiometry Ta As films due to the volatilization of As during the growth.To solve this problem,we attempted to grow Ta As films on different substrates using targets with different As stoichiometric ratios via pulsed laser deposition(PLD).In this work,we found that partial As ions of the Ga As substrate are likely to diffuse into the Ta As films during growth,which was preliminarily confirmed by structural characterization,surface topography and composition analysis.As a result,the As content in the Ta As film was improved and the Ta As phase was achieved.Our work presents an effective method for the fabrication of Ta As films using PLD,enabling possible use of the Weyl semimetal film for functional devices.

Pulsed Laser Annealed Ga Hyperdoped Poly-Si/SiO_(x)Passivating Contacts for High-Efficiency Monocrystalline Si Solar Cells

Polycrystalline Si(poly-Si)-based passivating contacts are promising candidates for high-efficiency crystalline Si solar cells.We show that nanosecond-scale pulsed laser melting(PLM)is an industrially viable technique to fabricate such contacts with precisely controlled dopant concentration profiles that exceed the solid solubility limit.We demonstrate that conventionally doped,hole-selective poly-Si/SiO_(x)contacts that provide poor surface passivation of c-Si can be replaced with Ga-or B-doped contacts based on non-equilibrium doping.We overcome the solid solubility limit for both dopants in poly-Si by rapid cooling and recrystallization over a timescale of∼25 ns.We show an active Ga dopant concentration of∼3×10^(20)cm^(−3)in poly-Si which is six times higher than its solubility limit in c-Si,and a B dopant concentration as high as∼10^(21) cm^(−3).We measure an implied open-circuit voltage of 735 mV for Ga-doped poly-Si/SiO_(x)contacts on Czochralski Si with a low contact resistivity of 35.5±2.4 mΩcm^(2).Scanning spreading resistance microscopy and Kelvin probe force microscopy show large diffusion and drift current in the p-n junction that contributes to the low contact resistivity.Our results suggest that PLM can be extended for hyperdoping of other semiconductors with low solubility atoms to enable high-efficiency devices.

Numerical Analysis of Nd:YAG Pulsed Laser Polishing CVD Self-standing Diamond Film

Chemical vapor deposited （CVD） diamond film has broad application foreground in high-tech fields. But polycrystalline CVD self-standing diamond thick film has rough surface and non-uniform thickness that adversely affect its extensive applications. Laser polishing is a useful method to smooth self-standing diamond film. At present, attentions have been focused on experimental research on laser polishing, but the revealing of theoretical model and the forecast of polishing process are vacant. The paper presents a finite element model to simulate and analyze the mechanism of laser polishing diamond based on laser thermal conduction theory. The experimental investigation is also carried out on Nd：YAG pulsed laser smoothing diamond thick film. The simulation results have good accordance with the results of experimental results. The temperature and thermal stress fields are investigated at different incidence angles and parameters of Nd：YAG pulsed laser. The pyramidal-like roughness of diamond thick film leads to the non-homogeneous temperature fields. The temperature at the peak of diamond film is much higher than that in the valley, which leads to the smoothing of diamond thick film. The effect of laser parameters on the surface roughness and thickness of graphite transition layer is also carried out. The results show that high power density laser makes the diamond surface rapid heating, evaporation and sublimation after its graphitization. It is also found that the good polish quality of diamond thick film can be obtained by a combination of large incident angle, moderate laser pulsed energy, large repetition rate and moderate laser pulse width. The results obtained here provide the theoretical basis for laser polishing diamond film with high efficiency and high quality.

A New Synthetical Model of High-Power Pulsed Laser Ablation

We develop a new synthetical model of high-power pulsed laser ablation,which considers the dynamicabsorptance,vaporization,and plasma shielding.And the corresponding heat conduction equations with the initial andboundary conditions are given.The numerical solutions are obtained under the reasonable technical parameter condi-tions by taking YBa_2Cu_3O_7 target for example.The space-dependence and time-dependence of temperature in targetat a certain laser fluence are presented,then,the transmitted intensity through plasma plume,space-dependence oftemperature and ablation rate for different laser fluences are significantly analyzed.As a result,the satisfactorily goodagreement between our numerical results and experimental results indicates that the influences of the dynamic absorp-tance,vaporization,and plasma shielding cannot be neglected.Taking all the three mechanisms above simultaneouslyinto account for the first time,we cause the present model to be more practical.

Compact Co3O4/Co in-situ nanocomposites prepared by pulsed laser sintering as anode materials for lithium-ion batteries

With the development of portable electronic devices, electric vehicles, and power storage systems, the demand for rechargeable batteries with high energy density is growing rapidly [1–5]. In the field of lithium-ion batteries, the unconventional anode materials such as tin, silicon, metallic lithium, and transition-metal oxides have been extensively studied due to the high capacity, but they are still inapplicable because of the low initial coulombic efficiency(ICE) and/or the poor cycling stability [5–9].

Tribological properties of diamond-like carbon films deposited bv pulsed laser arc deposition

A novel method, pulsed laser arc deposition combining the advantages of pulsed laser deposition and cathode vacuum arc techniques, was used to deposit the diamond-like carbon （DLC） nanofilms with different thicknesses. Spectroscopic ellipsometer, Auger electron spectroscopy, x-ray photoelectron spectroscopy, Raman spectroscopy, atomic force microscopy, scanning electron microscopy and multi-functional friction and wear tester were employed to investigate the physical and tribological properties of the deposited films. The results show that the deposited films are amorphous and the sp2, sp3 and C-O bonds at the top surface of the films are identified. The Raman peak intensity and surface roughness increase with increasing film thickness. Friction coefficients are about 0.1, 0.15, 0.18, when the film thicknesses are in the range of 17-21 nm, 30-57 nm, 67-123 nm, respectively. This is attributed to the united effects of substrate and surface roughness. The wear mechanism of DLC films is mainly abrasive wear when film thickness is in the range of 17-41 nm, while it transforms to abrasive and adhesive wear, when the film thickness lies between 72 and 123 nm.

High temperature thermoelectric properties of highly c-axis oriented Bi_2Sr_2Co_2O_y thin films fabricated by pulsed laser deposition

High-temperature thermoelectric transport property measurements have been performed on the highly c-axis oriented Bi2Sr2Co20v thin films prepared by pulsed laser deposition on LaA1Oa （001）. Both the electric resistivity p and the seebeck coefficient S of the film exhibit an increasing trend with the temperature from 300 K-1000 K and reach up to 4.8 m. cm and 202 V/K at 980 K, resulting in a power factor of 0.85 mW/mK which are comparable to those of the single crystalline samples. A small polaron hopping conduction can be responsible for the conduction mechanism of the film at high temperature. The results demonstrate that the Bi2Sr2Co2Oy thin film has potential application has high temperature thin film thermoelectric devices,

The Process of a Laser-Supported Combustion Wave Induced by Millisecond Pulsed Laser on Aluminum Alloy

We study the process of a laser-supported combustion wave （LSCW） when an aluminum alloy is irradiated by a millisecond pulse laser based on the method of laser shadowgraphy. Under the condition of different laser parameters, the obtained results include the velocity, ignition threshold of LSCW and the variation law. The speed of LSCW increases with the laser energy under the same irradiation laser pulse width, and the speed of LSCW reduces with the increase of the laser pulse width under the same irradiation laser energy. Moreover, the ignition time of LSCW becomes shorter by increasing the laser number of the pulse and is not effected by changing the frequencies, when keeping the laser pulse width and energy unchanged. The results of the study can be applied in the laser propulsion technology and metal surface laser heat treatment, etc.

Growth properties of gallium oxide on sapphire substrate by plasma-assisted pulsed laser deposition

Gallium oxide was deposited on a c-plane sapphire substrate by oxygen plasma-assisted pulsed laser deposition(PLD).An oxygen radical was generated by an inductive coupled plasma source and the effect of radio frequency(RF)power on growth rate was investigated.A film grown with plasma assistance showed 2.7 times faster growth rate.X-ray diffraction and Raman spectroscopy analysis showedβ-Ga2 O3 films grown with plasma assistance at 500℃.The roughness of the films decreased when the RF power of plasma treatment increased.Transmittance of these films was at least 80%and showed sharp absorption edge at 250 nm which was consistent with data previously reported.

Pulsed laser ablation in liquid of sp-carbon chains:Status and recent advances

This review provides a discussion of the current state of research on sp-carbon chains synthesized by pulsed laser ablation in liquid.In recent years,pulsed laser ablation in liquid(PLAL)has been widely employed for polyynes synthesis thanks to its flexibility with varying laser parameters,solvents,and targets.This allows the control of sp-carbon chains properties as yield,length,termination and stability.Although many reviews related to PLAL have been published,a comprehensive work reporting the current status and advances related to the synthesis of sp-carbon chains by PLAL is still missing.Here we first review the principle of PLAL and the mechanisms of formation of sp-carbon chains.Then we discuss the role of laser fluence(i.e.energy density),solvent,and target for sp-carbon chains synthesis.Lastly,we report the progress related to the prolonged stability of sp-carbon chains by PLAL encapsulated in polymeric matrices.This review will be a helpful guide for researchers interested in synthesizing sp-carbon chains by PLAL.

High-quality micro-shape fabrication of monocrystalline diamond by nanosecond pulsed laser and acid cleaning

The flat plane of small surface roughness below 0.1μm average roughness was obtained for monocrystalline diamond by nanosecond pulsed laser irradiation of 1060 nm and post-process acid cleaning,at a laser fluence around the material removal threshold value.The glossy and flat plane at the bottom of the micro-groove was parallel to the top surface of the specimen,although the round beam of Gaussian mode was irradiated in the direction perpendicular to the top surface of specimen.The square beam of top-hat mode produced a shallower micro-groove with a wider,flatter bottom compared with the round beam in Gaussian mode.The creation method of the flat plane with small surface roughness was discussed in the arrangement strategy of linear micro-grooving by the square beam of top-hat mode.Normal side-by-side repetition of linear micro-grooving did not create a flat plane with constant depth.Therefore,a two-step scanning method was proposed in order to overcome the problem in the normal side-by-side repetition of liner micro-grooving.Non-removal areas were partly retained between the processing lines in the first step,and the laser scanning was conducted on the retained area in the second step.The newly proposed two-step scanning method was practical and useful to create a widely flat plane with small surface roughness,and the two-step scanning method provided superior control over the micro-groove depth.This proposed method can reduce the surface roughness in addition to the shape creation of monocrystalline diamond,and it can be used as a high-quality micro-shape fabrication method of monocrystalline diamond.

A single-event transient induced by a pulsed laser in a silicon-germanium heterojunction bipolar transistor

A study on the single event transient （SET） induced by a pulsed laser in a silicon-germanium （SiGe） heterojunction bipolar transistor （HBT） is presented in this work. The impacts of laser energy and collector load resistance on the SET are investigated in detail. The waveform, amplitude, and width of the SET pulse as well as collected charge are used to characterize the SET response. The experimental results are discussed in detail and it is demonstrated that the laser energy and load resistance significantly affect the SET in the SiGe HBT. Furthermore, the underlying physical mechanisms are analyzed and investigated, and a near-ideal exponential model is proposed for the first time to describe the discharge of laser-induced electrons via collector resistance to collector supply when both base-collector and collector-substrate junctions are reverse biased or weakly forward biased. Besides, it is found that an additional multi-path discharge would play an important role in the SET once the base-collector and collector-substrate junctions get strongly forward biased due to a strong transient step charge by the laser pulse.

Microstructure,optical,and photoluminescence properties ofβ-Ga_(2)O_(3)films prepared by pulsed laser deposition under different oxygen partial pressures

Theβ-Ga_(2)O_(3)films are prepared on polished Al_(2)O_(3)(0001)substrates by pulsed laser deposition at different oxygen partial pressures.The influence of oxygen partial pressure on crystal structure,surface morphology,thickness,optical properties,and photoluminescence properties are studied by x-ray diffraction(XRD),atomic force microscope(AFM),scanning electron microscope(SEM),spectrophotometer,and spectrofluorometer.The results of x-ray diffraction and atomic force microscope indicate that with the decrease of oxygen pressure,the full width at half maximum(FWHM)and grain size increase.With the increase of oxygen pressure,the thickness of the films first increases and then decreases.The room-temperature UV-visible(UV-Vis)absorption spectra show that the bandgap of theβ-Ga_(2)O_(3)film increases from4.76 e V to 4.91 e V as oxygen pressure decreasing.Room temperature photoluminescence spectra reveal that the emission band can be divided into four Gaussian bands centered at about 310 nm(~4.0 e V),360 nm(~3.44 e V),445 nm(~2.79 e V),and 467 nm(~2.66 e V),respectively.In addition,the total photoluminescence intensity decreases with oxygen pressure increasing,and it is found that the two UV bands are related to self-trapped holes(STHs)at O1 sites and between two O2-s sites,respectively,and the two blue bands originate from V_(Ga)^(2-)at Ga1 tetrahedral sites.The photoluminescence mechanism of the films is also discussed.These results will lay a foundation for investigating the Ga_(2)O_(3)film-based electronic devices.

Effect of pulsed laser process parameters on welding quality of automobile fuel injector

In this research, pulverization plate and base of a fuel injector in an automobile electronic-controlled engine was joined by pulsed laser welding. The different welding parameters were evaluated and effect of process parameters on joint characteristics was analyzed. The optimal process parameters were obtained as follows： welding current 120 A, welding speed 600 ram/rain, pulse duration 1.80 ms and pulse frequency 60 Hz. The microstructure of weld metal was investigated. Results show that the fusion zone is austenitic dendrite, the weld center is equiaxed grain, while the transition zone between fusion zone and weld center is mixed crystal with austenitic dendrite and equiaxed grain. The weld layered phenomenon was observed, and eddy caused by keyhole effect is the main reason for the formation of layered structure in molten pool.

Grain refining in weld metal using short-pulsed laser ablation during CW laser welding of 2024-T3 aluminum alloy

The 2024 aluminum alloy is used extensively in the aircraft and aerospace industries because of its excellent mechanical properties.However,the weldability of 2024 aluminum alloy is generally low because it contains a high number of solutes,such as copper(Cu),magnesium(Mg),and manganese(Mn),causing solidification cracking.If high speed welding of 2024 aluminum alloy without the use of filler is achieved,the applicability of 2024 aluminum alloys will expand.Grain refining is one of the methods used to prevent solidification cracking in weld metal,although it has never been achieved for high-speed laser welding of 2024 aluminum alloy without filler.Here,we propose a short-pulsed,laser-induced,grain-refining method during continuous wave laser welding without filler.Bead-on-plate welding was performed on a 2024-T3 aluminum alloy at a welding speed of 1 m min−1 with a single mode fiber laser at a wavelength of 1070 nm and power of 1 kW.Areas in and around the molten pool were irradiated with nanosecond laser pulses at a wavelength of 1064 nm,pulse width of 10 ns,and pulse energy of 430 mJ.The grain-refinement effect was confirmed when laser pulses were irradiated on the molten pool.The grain-refinement region was formed in a semicircular shape along the solid–liquid interface.Results of the vertical section indicate that the grain-refinement region reached a depth of 1 mm along the solid–liquid interface.The Vickers hardness test results demonstrated that the hardness increased as a result of grain refinement and that the progress of solidification cracking was suppressed in the grain refinement region.

Investigating the Thermal Stress of Millisecond Pulsed Laser Irradiation on Charge-Coupled Devices

In this study, a two-dimensional model describing thermal stress on a charge-coupled device (CCD) induced by ms laser pulses was examined. Considering the nonlinearity of the CCD’s material parameters and the melting phase transition process of aluminum electrode materials was considered by using equivalent specific heat capacity method, the physical process where a laser pulse irradiating a CCD pixel array was simulated using COMSOL Multiphysics software. The temperature field and thermal stress field were calculated and analyzed. In order to clarify the mechanism producing damage on the CCD detector, Raman spectra from silicon were measured with a micro-Raman spectrometer to determine stress change in the CCD chip. The procedure presented herein illustrates a method for evaluating strain in a CCD after laser irradiation.