In conventional pulsed laser deposition （PLD） technique, plume deflection and composition distribution change with the laser incident direction and pulse energy, then causing uneven film thickness and composition di...In conventional pulsed laser deposition （PLD） technique, plume deflection and composition distribution change with the laser incident direction and pulse energy, then causing uneven film thickness and composition distribution for a multicomponent film and eventually leading to low device quality and low rate of final products. We present a novel method based on PLD for depositing large CIGS films with uni- form thickness and stoichiometry. By oscillating a mirror placed coaxially with the incident laser beam, the laser＇s focus is scanned across the rotating target surface. This arrangement maintains a constant re- flectance and optical distance, ensuring that a consistent energy density is delivered to the target surface by each laser pulse. Scanning the laser spot across the target suppresses the formation of micro-columns, and thus the plume deflection effect that reduces film uniformity in conventional PLD technique is eliminated. This coaxial scanning PLD method is used to deposit a CIGS film, 500 nm thick, with thickness uniformity exceeding ±3% within a 5 cm diameter, and exhibiting a highly homogeneous elemental distribution.展开更多
In this study, Bismuth doped Titanium dioxide thin films were deposited on glass substrates by a pulse laser deposition using laser. The effect of annealing temperature on the structural and electrical properties was ...In this study, Bismuth doped Titanium dioxide thin films were deposited on glass substrates by a pulse laser deposition using laser. The effect of annealing temperature on the structural and electrical properties was investigated. X-ray diffraction pattern for pure and doped titanium dioxide films with different doping different ratio with Bi show that these films have amorphous structure oanvert to polycrystalline structure with annealing and doping and have a good identically with standard peaks for Anatase and Rutile phases. The orientation was at specific direction for Rutile. The crystalline of films increases by the increase of doping ratio. The crystalline increased with annealing temperature. Annealed films at different annealing temperatures have been studied. The results show that these films have two activation energies and by increasing the doping ratio, the activation energies and the conductivity increase. Both the annealing and composition effects on Hall constant, density of electron carders and Hall mobility are studied. Hall Effect measurements show that all films have n- type charge conductivity and the concentration increases while the mobility decreases with doping and annealing.展开更多
基金supported by the Shenzhen Basic Research Project of Science and Technology under Grant No.JCYJ20120613112423982
文摘In conventional pulsed laser deposition （PLD） technique, plume deflection and composition distribution change with the laser incident direction and pulse energy, then causing uneven film thickness and composition distribution for a multicomponent film and eventually leading to low device quality and low rate of final products. We present a novel method based on PLD for depositing large CIGS films with uni- form thickness and stoichiometry. By oscillating a mirror placed coaxially with the incident laser beam, the laser＇s focus is scanned across the rotating target surface. This arrangement maintains a constant re- flectance and optical distance, ensuring that a consistent energy density is delivered to the target surface by each laser pulse. Scanning the laser spot across the target suppresses the formation of micro-columns, and thus the plume deflection effect that reduces film uniformity in conventional PLD technique is eliminated. This coaxial scanning PLD method is used to deposit a CIGS film, 500 nm thick, with thickness uniformity exceeding ±3% within a 5 cm diameter, and exhibiting a highly homogeneous elemental distribution.
文摘In this study, Bismuth doped Titanium dioxide thin films were deposited on glass substrates by a pulse laser deposition using laser. The effect of annealing temperature on the structural and electrical properties was investigated. X-ray diffraction pattern for pure and doped titanium dioxide films with different doping different ratio with Bi show that these films have amorphous structure oanvert to polycrystalline structure with annealing and doping and have a good identically with standard peaks for Anatase and Rutile phases. The orientation was at specific direction for Rutile. The crystalline of films increases by the increase of doping ratio. The crystalline increased with annealing temperature. Annealed films at different annealing temperatures have been studied. The results show that these films have two activation energies and by increasing the doping ratio, the activation energies and the conductivity increase. Both the annealing and composition effects on Hall constant, density of electron carders and Hall mobility are studied. Hall Effect measurements show that all films have n- type charge conductivity and the concentration increases while the mobility decreases with doping and annealing.
