In silicon-oxide-nitride-oxide-silicon （SONOS） memory and other charge trapping memories, the charge distribution after programming operation has great impact on the devic＇s characteristics,such as reading,programm...In silicon-oxide-nitride-oxide-silicon （SONOS） memory and other charge trapping memories, the charge distribution after programming operation has great impact on the devic＇s characteristics,such as reading,programming/erasing, and reliability. The lateral distribution of injected charges can be measured precisely using the charge pumping method. To improve the precision of the actual measurement, a combination of a constant low voltage method and a constant high voltage method is introduced during the charge pumping testing of the drain side and the source side, respectively. Finally, the electron distribution after channel hot electron programming in SONOS memory is obtained,which is close to the drain side with a width of about 50nm.展开更多
A novel numerical method for fiber Raman amplifier (FRA) from standard propagation equations is presented and derived based on the one-step method for ordinary differential equation (ODE). The proposed algorithm is ef...A novel numerical method for fiber Raman amplifier (FRA) from standard propagation equations is presented and derived based on the one-step method for ordinary differential equation (ODE). The proposed algorithm is effective in solving FRA equations including all the interactions among pumps, signals, and noises. Applications of the numerical analysis to practical FRA-based systems show a great reduction in computation time in comparison with the average power method and the fourth-order Runge-Kutta (RK) method, under the same condition. Also the proposed method can decrease the computing time over three orders of magnitude with excellent accuracy promises in comparison with the direct integration method.展开更多
文摘In silicon-oxide-nitride-oxide-silicon （SONOS） memory and other charge trapping memories, the charge distribution after programming operation has great impact on the devic＇s characteristics,such as reading,programming/erasing, and reliability. The lateral distribution of injected charges can be measured precisely using the charge pumping method. To improve the precision of the actual measurement, a combination of a constant low voltage method and a constant high voltage method is introduced during the charge pumping testing of the drain side and the source side, respectively. Finally, the electron distribution after channel hot electron programming in SONOS memory is obtained,which is close to the drain side with a width of about 50nm.
文摘A novel numerical method for fiber Raman amplifier (FRA) from standard propagation equations is presented and derived based on the one-step method for ordinary differential equation (ODE). The proposed algorithm is effective in solving FRA equations including all the interactions among pumps, signals, and noises. Applications of the numerical analysis to practical FRA-based systems show a great reduction in computation time in comparison with the average power method and the fourth-order Runge-Kutta (RK) method, under the same condition. Also the proposed method can decrease the computing time over three orders of magnitude with excellent accuracy promises in comparison with the direct integration method.
