This paper presents a low power and high efficiency high voltage generator circuit embedded in electrically erasable programmable read-only memory（EEPROM）.The low power is minimized by a capacitance divider circuit ...This paper presents a low power and high efficiency high voltage generator circuit embedded in electrically erasable programmable read-only memory（EEPROM）.The low power is minimized by a capacitance divider circuit and a regulator circuit using the controlling clock switch technique.The high efficiency is dependent on the zero threshold voltage（V_（th）） MOSFET and the charge transfer switch（CTS） charge pump.The proposed high voltage generator circuit has been implemented in a 0.35μm EEPROM CMOS process.Measured results show that the proposed high voltage generator circuit has a low power consumption of about 150.48μW and a higher pumping efficiency（83.3%） than previously reported circuits.This high voltage generator circuit can also be widely used in low-power flash devices due to its high efficiency and low power dissipation.展开更多
基金supported by the National Natural Science Foundation of China(No.61072010)
文摘This paper presents a low power and high efficiency high voltage generator circuit embedded in electrically erasable programmable read-only memory（EEPROM）.The low power is minimized by a capacitance divider circuit and a regulator circuit using the controlling clock switch technique.The high efficiency is dependent on the zero threshold voltage（V_（th）） MOSFET and the charge transfer switch（CTS） charge pump.The proposed high voltage generator circuit has been implemented in a 0.35μm EEPROM CMOS process.Measured results show that the proposed high voltage generator circuit has a low power consumption of about 150.48μW and a higher pumping efficiency（83.3%） than previously reported circuits.This high voltage generator circuit can also be widely used in low-power flash devices due to its high efficiency and low power dissipation.
