The binding energies of excitons in quantum well structures subjected to an applied uniform electric field by taking into account the exciton longitudinal optical phonon interaction is calculated. The binding energies...The binding energies of excitons in quantum well structures subjected to an applied uniform electric field by taking into account the exciton longitudinal optical phonon interaction is calculated. The binding energies and corresponding Stark shifts for Ⅲ-Ⅴ and Ⅱ-Ⅵ compound semiconductor quantum well structures have been numerically computed. The results for GaAs/A1GaAs and ZnCdSe/ZnSe quantum wells are given and discussed. Theoretical results show that the exciton-phonon coupling reduces both the exciton binding energies and the Stark shifts by screening the Coulomb interaction. This effect is observable experimentally and cannot be neglected.展开更多
InGaN quantum dots （QDs） have attracted many research interests in recent years for their potentials to realize long wavelength visible emission from green to red, which can pave a way to fabricate the phosphor-free...InGaN quantum dots （QDs） have attracted many research interests in recent years for their potentials to realize long wavelength visible emission from green to red, which can pave a way to fabricate the phosphor-free white light emitting diodes （LEDs）. In this paper, we reported our recent progresses on InGaN QD LEDs, the discussions were dedicated to the basic physics model of the strain relaxation in self-assembled InGaN QDs, the growth of InGaN QDs with a growth interruption method by metal organic vapor phase epitaxy, the optimization of GaN barrier growth in multilayer InGaN QDs, the demonstration of green, yellow-green and red InGaN QD LEDs, and future challenges.展开更多
基金Project supported in part by the National Natural Science Foundation of China （Grant No 10164003） and the Natural Science Foundation of Inner Mongol of China （Grant No 200408020101）.
文摘The binding energies of excitons in quantum well structures subjected to an applied uniform electric field by taking into account the exciton longitudinal optical phonon interaction is calculated. The binding energies and corresponding Stark shifts for Ⅲ-Ⅴ and Ⅱ-Ⅵ compound semiconductor quantum well structures have been numerically computed. The results for GaAs/A1GaAs and ZnCdSe/ZnSe quantum wells are given and discussed. Theoretical results show that the exciton-phonon coupling reduces both the exciton binding energies and the Stark shifts by screening the Coulomb interaction. This effect is observable experimentally and cannot be neglected.
基金Acknowledgements This work was supported by the National Basic Research Program of China （Nos. 2013CB632804, 2011CB301900 and 2012CB3155605）, the National Natural Science Foundation of China （Grant Nos. 61176015, 61210014, 51002085, 61321004, 61307024 and 61176059）, and the High Technology Research and Development Program of China （Nos. 2011AA03Al12, 2011AA03A106, 2011AA03A105 and 2012AA050601）.
文摘InGaN quantum dots （QDs） have attracted many research interests in recent years for their potentials to realize long wavelength visible emission from green to red, which can pave a way to fabricate the phosphor-free white light emitting diodes （LEDs）. In this paper, we reported our recent progresses on InGaN QD LEDs, the discussions were dedicated to the basic physics model of the strain relaxation in self-assembled InGaN QDs, the growth of InGaN QDs with a growth interruption method by metal organic vapor phase epitaxy, the optimization of GaN barrier growth in multilayer InGaN QDs, the demonstration of green, yellow-green and red InGaN QD LEDs, and future challenges.
