The electroluminescence （EL） and photoluminescence （PL） spectra of InGaN/GaN multiple quantum wells （MQWs） with a prestrained InGaN interlayer in a laser diode structure are investigated. When the injection curr...The electroluminescence （EL） and photoluminescence （PL） spectra of InGaN/GaN multiple quantum wells （MQWs） with a prestrained InGaN interlayer in a laser diode structure are investigated. When the injection current increases from 5 mA to 50 mA, the blueshift of the EL emission peak is 1 meV for the prestrained sample and 23 meV for a control sample with the conventional structure. Also, the internal quantum efficiency and the EL intensity at the injection current of 20 mA are increased by 71% and 65% respectively by inserting the prestrained InGaN interlayer. The reduced blueshift and the enhanced emission are attributed mainly to the reduced quantum-confined Stark effect （QCSE） in the prestrained sample. Such attributions are supported by the theoretical simulation results, which reveal the smaller piezoelectric field and the enhanced overlap of electron and hole wave functions in the prestrained sample. Therefore, the prestrained InGaN interlayer contributes to strain relaxation in the MQW layer and enhancement of light emission due to the reduction of QCSE.展开更多
Surface depletion field would introduce the depletion region near surface and thus could significantly alter the optical,electronic and optoelectronic properties of the materials,especially low-dimensional materials.T...Surface depletion field would introduce the depletion region near surface and thus could significantly alter the optical,electronic and optoelectronic properties of the materials,especially low-dimensional materials.Two-dimensional(2D)organic—inorganic hybrid perovskites with van der Waals bonds in the out-of-plane direction are expected to have less influence from the surface depletion field;nevertheless,studies on this remain elusive.Here we report on how the surface depletion field affects the structural phase transition,quantum confinement and Stark effect in 2D(BA)2PbI4 perovskite microplates by the thickness-,temperature-and power-dependent photoluminescence(PL)spectroscopy.Power dependent PL studies suggest that high-temperature phase(HTP)and low-temperature phase(LTP)can coexist in a wider temperature range depending on the thickness of the 2D perovskite microplates.With the decrease of the microplate thickness,the structural phase transition temperature first gradually decreases and then increases below 25 nm,in striking contrast to the conventional size dependent structural phase transition.Based on the thickness evolution of the emission peaks for both high-temperature phase and low-temperature phase,the anomalous size dependent phase transition could probably be ascribed to the surface depletion field and the surface energy difference between polymorphs.This explanation was further supported by the temperature dependent PL studies of the suspended microplates and encapsulated microplates with graphene and boron nitride flakes.Along with the thickness dependent phase transition,the emission energies of free excitons for both HTP and LTP with thickness can be ascribed to the surface depletion induced confinement and Stark effect.展开更多
The binding energies of excitons in quantum well structures subjected to an applied uniform electric field by taking into account the exciton longitudinal optical phonon interaction is calculated. The binding energies...The binding energies of excitons in quantum well structures subjected to an applied uniform electric field by taking into account the exciton longitudinal optical phonon interaction is calculated. The binding energies and corresponding Stark shifts for Ⅲ-Ⅴ and Ⅱ-Ⅵ compound semiconductor quantum well structures have been numerically computed. The results for GaAs/A1GaAs and ZnCdSe/ZnSe quantum wells are given and discussed. Theoretical results show that the exciton-phonon coupling reduces both the exciton binding energies and the Stark shifts by screening the Coulomb interaction. This effect is observable experimentally and cannot be neglected.展开更多
We focus on the optimization of SiGe material deposition, the minimization of the parasitic capacitance of the probe pads for high speed, low voltage and high contrast ratio operation. The device fabrication is based ...We focus on the optimization of SiGe material deposition, the minimization of the parasitic capacitance of the probe pads for high speed, low voltage and high contrast ratio operation. The device fabrication is based on processes for standard Si electronics and is suitable for mass-production. We present observations of quantum confinement and quantum-confined Stark effect （QCSE） electroabsorption in Ge quantum wells （QWs） with SiGe barriers grown on Si substrates. Though Ge is an indirect gap semiconductor, the resulting effects are at least as clear and strong as seen in typical III-V QW structures at similar wavelengths. We also demonstrated a modulator, with eye diagrams of up to 3.5 GHz, a small driving voltage of 2.5 V and a modulation bandwidth at about 10 GHz. Finally, carrier dynamics under ultra-fast laser excitation and high- speed photocurrent response are investigated.展开更多
InGaN quantum dots （QDs） have attracted many research interests in recent years for their potentials to realize long wavelength visible emission from green to red, which can pave a way to fabricate the phosphor-free...InGaN quantum dots （QDs） have attracted many research interests in recent years for their potentials to realize long wavelength visible emission from green to red, which can pave a way to fabricate the phosphor-free white light emitting diodes （LEDs）. In this paper, we reported our recent progresses on InGaN QD LEDs, the discussions were dedicated to the basic physics model of the strain relaxation in self-assembled InGaN QDs, the growth of InGaN QDs with a growth interruption method by metal organic vapor phase epitaxy, the optimization of GaN barrier growth in multilayer InGaN QDs, the demonstration of green, yellow-green and red InGaN QD LEDs, and future challenges.展开更多
基金Project supported by the National Basic Research Program of China(Grant No.2012CB619304)the National Natural Science Foundation of China(Grant Nos.61076013 and 51272008)the Beijing Municipal Science and Technology Project,China(Grant No.H030430020000)
文摘The electroluminescence （EL） and photoluminescence （PL） spectra of InGaN/GaN multiple quantum wells （MQWs） with a prestrained InGaN interlayer in a laser diode structure are investigated. When the injection current increases from 5 mA to 50 mA, the blueshift of the EL emission peak is 1 meV for the prestrained sample and 23 meV for a control sample with the conventional structure. Also, the internal quantum efficiency and the EL intensity at the injection current of 20 mA are increased by 71% and 65% respectively by inserting the prestrained InGaN interlayer. The reduced blueshift and the enhanced emission are attributed mainly to the reduced quantum-confined Stark effect （QCSE） in the prestrained sample. Such attributions are supported by the theoretical simulation results, which reveal the smaller piezoelectric field and the enhanced overlap of electron and hole wave functions in the prestrained sample. Therefore, the prestrained InGaN interlayer contributes to strain relaxation in the MQW layer and enhancement of light emission due to the reduction of QCSE.
基金D.H.L.acknowledges support from the National Natural Science Foundation of China(No.61674060)Innovation Fund of WNLO and the Fundamental Research Funds for the Central Universities,HUST(Nos.2017KFYXJJ030,2017KFXKJC003,2017KFXKJC002,and 2018KFYXKJC016)H.M.L.is grateful for support from New Mexico EPSCoR with NSF-1301346.We thank Testing Center of Huazhong University of Science and Technology for the support in inductively coupled plasma etching.
文摘Surface depletion field would introduce the depletion region near surface and thus could significantly alter the optical,electronic and optoelectronic properties of the materials,especially low-dimensional materials.Two-dimensional(2D)organic—inorganic hybrid perovskites with van der Waals bonds in the out-of-plane direction are expected to have less influence from the surface depletion field;nevertheless,studies on this remain elusive.Here we report on how the surface depletion field affects the structural phase transition,quantum confinement and Stark effect in 2D(BA)2PbI4 perovskite microplates by the thickness-,temperature-and power-dependent photoluminescence(PL)spectroscopy.Power dependent PL studies suggest that high-temperature phase(HTP)and low-temperature phase(LTP)can coexist in a wider temperature range depending on the thickness of the 2D perovskite microplates.With the decrease of the microplate thickness,the structural phase transition temperature first gradually decreases and then increases below 25 nm,in striking contrast to the conventional size dependent structural phase transition.Based on the thickness evolution of the emission peaks for both high-temperature phase and low-temperature phase,the anomalous size dependent phase transition could probably be ascribed to the surface depletion field and the surface energy difference between polymorphs.This explanation was further supported by the temperature dependent PL studies of the suspended microplates and encapsulated microplates with graphene and boron nitride flakes.Along with the thickness dependent phase transition,the emission energies of free excitons for both HTP and LTP with thickness can be ascribed to the surface depletion induced confinement and Stark effect.
基金Project supported in part by the National Natural Science Foundation of China （Grant No 10164003） and the Natural Science Foundation of Inner Mongol of China （Grant No 200408020101）.
文摘The binding energies of excitons in quantum well structures subjected to an applied uniform electric field by taking into account the exciton longitudinal optical phonon interaction is calculated. The binding energies and corresponding Stark shifts for Ⅲ-Ⅴ and Ⅱ-Ⅵ compound semiconductor quantum well structures have been numerically computed. The results for GaAs/A1GaAs and ZnCdSe/ZnSe quantum wells are given and discussed. Theoretical results show that the exciton-phonon coupling reduces both the exciton binding energies and the Stark shifts by screening the Coulomb interaction. This effect is observable experimentally and cannot be neglected.
文摘We focus on the optimization of SiGe material deposition, the minimization of the parasitic capacitance of the probe pads for high speed, low voltage and high contrast ratio operation. The device fabrication is based on processes for standard Si electronics and is suitable for mass-production. We present observations of quantum confinement and quantum-confined Stark effect （QCSE） electroabsorption in Ge quantum wells （QWs） with SiGe barriers grown on Si substrates. Though Ge is an indirect gap semiconductor, the resulting effects are at least as clear and strong as seen in typical III-V QW structures at similar wavelengths. We also demonstrated a modulator, with eye diagrams of up to 3.5 GHz, a small driving voltage of 2.5 V and a modulation bandwidth at about 10 GHz. Finally, carrier dynamics under ultra-fast laser excitation and high- speed photocurrent response are investigated.
基金Acknowledgements This work was supported by the National Basic Research Program of China （Nos. 2013CB632804, 2011CB301900 and 2012CB3155605）, the National Natural Science Foundation of China （Grant Nos. 61176015, 61210014, 51002085, 61321004, 61307024 and 61176059）, and the High Technology Research and Development Program of China （Nos. 2011AA03Al12, 2011AA03A106, 2011AA03A105 and 2012AA050601）.
文摘InGaN quantum dots （QDs） have attracted many research interests in recent years for their potentials to realize long wavelength visible emission from green to red, which can pave a way to fabricate the phosphor-free white light emitting diodes （LEDs）. In this paper, we reported our recent progresses on InGaN QD LEDs, the discussions were dedicated to the basic physics model of the strain relaxation in self-assembled InGaN QDs, the growth of InGaN QDs with a growth interruption method by metal organic vapor phase epitaxy, the optimization of GaN barrier growth in multilayer InGaN QDs, the demonstration of green, yellow-green and red InGaN QD LEDs, and future challenges.
