Mobility edges and localization characteristics in one-dimensional quasiperiodic quantum walk

We construct a one-dimensional quasiperiodic quantum walk to investigate the localization–delocalization transition.The inverse participation ratio and Lyapunov exponent are employed as two indexes to determine the mobility edge, a critical energy to distinguish the energy regions of extended and localized states. The analytical solution of mobility edge is obtained by the Lyapunov exponents in global theory, and the consistency of the two indexes is confirmed. We further study the dynamic characteristics of the quantum walk and show that the probabilities are localized to some specific lattice sites with time evolution. This phenomenon is explained by the effective potential of the Hamiltonian which corresponds to the phase in the coin operator of the quantum walk.

Intelligent Control of Mobile Robot with Redundant Manipulator & Stereovision: Quantum / Soft Computing Toolkit

The task of an intelligent control system design applying soft and quantum computational intelligence technologies discussed.An example of a control object as a mobile robot with redundant robotic manipulator and stereovision introduced.Design of robust knowledge bases is performed using a developed computational intelligence-quantum/soft computing toolkit(QC/SCOptKBTM).The knowledge base self-organization process of fuzzy homogeneous regulators through the application of end-to-end IT of quantum computing described.The coordination control between the mobile robot and redundant manipulator with stereovision based on soft computing described.The general design methodology of a generalizing control unit based on the physical laws of quantum computing(quantum information-thermodynamic trade-off of control quality distribution and knowledge base self-organization goal)is considered.The modernization of the pattern recognition system based on stereo vision technology presented.The effectiveness of the proposed methodology is demonstrated in comparison with the structures of control systems based on soft computing for unforeseen control situations with sensor system.The main objective of this article is to demonstrate the advantages of the approach based on quantum/soft computing.

Using capillary electrophoresis mobility shift assay to study the interaction of CdTe quantum dots with bovine serum albumin

In this work, the capillary electrophoresis mobility shift assay （CEMSA） was first adopted to study the interaction of protein with quantum dots （QDs）. In this study, bovine serum albumin （BSA） and CdTe QDs were used as model samples. We observed that BSA was facilely adsorbed to CdTe QDs surface, and the QD-BSA complex was formed by a 1：1 stoichiometric ratio. A value of 2.17 4-0.27 × 10^6 mol^-1 L^-1 （at 25 ℃） for the association constant was obtained by CEMSA.

Joint Resource Allocation Using Evolutionary Algorithms in Heterogeneous Mobile Cloud Computing Networks

The problem of joint radio and cloud resources allocation is studied for heterogeneous mobile cloud computing networks. The objective of the proposed joint resource allocation schemes is to maximize the total utility of users as well as satisfy the required quality of service(QoS) such as the end-to-end response latency experienced by each user. We formulate the problem of joint resource allocation as a combinatorial optimization problem. Three evolutionary approaches are considered to solve the problem: genetic algorithm(GA), ant colony optimization with genetic algorithm(ACO-GA), and quantum genetic algorithm(QGA). To decrease the time complexity, we propose a mapping process between the resource allocation matrix and the chromosome of GA, ACO-GA, and QGA, search the available radio and cloud resource pairs based on the resource availability matrixes for ACOGA, and encode the difference value between the allocated resources and the minimum resource requirement for QGA. Extensive simulation results show that our proposed methods greatly outperform the existing algorithms in terms of running time, the accuracy of final results, the total utility, resource utilization and the end-to-end response latency guaranteeing.

Pressure effect on the electron mobility in AlAs/GaAs quantum wells

By taking the influence of optical phonon modes into account, this paper adopts the dielectric continuum phonon model and force balance equation to investigate the electronic mobility parallel to the interfaces for AlAs/GaAs semiconductor quantum wells （QWs） under hydrostatic pressure. The scattering from confined phonon modes, interface phonon modes and half-space phonon modes are analysed and the dominant scattering mechanisms in wide and narrow QWs are presented. The temperature dependence of the electronic mobility is also studied in the temperature range of optical phonon scattering being available. It is shown that the electronic mobility reduces obviously as pressure increases from 0 to 4GPa, the confined longitudinal optical （LO） phonon modes play an important role in wide QWs, whereas the interface optical phonon modes are dominant in narrow QWs, the half-space LO phonon modes hardly influence the electronic mobility expect for very narrow QWs.

Electron mobility limited by surface and interface roughness scattering in Al_xGa_(1-x)N/GaN quantum wells

The electron mobility limited by the interface and surface roughness scatterings of the two-dimensional electron gas in AlxGa1-xN/GaN quantum wells is studied. The newly proposed surface roughness scattering in the AlGaN/GaN quantum wells becomes effective when an electric field exists in the AlxGa1-xN barrier. For the AlGaN/GaN potential well, the ground subband energy is governed by the spontaneous and the piezoelectric polarization fields which are determined by the barrier and the well thicknesses. The thickness fluctuation of the AlGaN barrier and the GaN well due to the roughnesses cause the local fluctuation of the ground subband energy, which will reduce the 2DEG mobility.

Mobility limited by cluster scattering in ternary alloy quantum wires

The mobility limited by cluster scattering in ternary alloy semiconductor quantum wire （QWR） is theoretically inves- tigated under Born approximation. We calculate the screened mobility due to clusters （high indium composition lnGaN） scattering in the InxGal_xN QWR structure. The characteristics of the cluster scattering mechanism are discussed in terms of the indium composition of clusters, the one-dimensional electron gas （1DEG） concentration, and the radius of QWR. We find that the density, breadth of cluster, and the correlation length have a strong effect on the electron mobility due to cluster scattering, Finally, a comparison of the cluster scattering is made with the alloy-disorder scattering. It is found that the cluster scattering acts as a significant scattering event to impact the resultant electron mobility in ternary alloy QWR.

Modeling and numerical simulation of electrical and optical characteristics of a quantum dot light-emitting diode based on the hopping mobility model:Influence of quantum dot concentration

We present a comprehensive numerical framework for the electrical and optical modeling and simulation of hybrid quantum dot light-emitting diodes(QD-LEDs).We propose a model known as hopping mobility to calculate the carrier mobility in the emissive organic layer doped with quantum dots(QDs).To evaluate the ability of this model to describe the electrical characteristics of QD-LEDs,the measured data of a fabricated QD-LED with different concentrations of QDs in the emissive layer were taken,and the corresponding calculations were performed based on the proposed model.The simulation results indicate that the hopping mobility model can describe the concentration dependence of the electrical behavior of the device.Then,based on the continuity equation for singlet and triplet excitons,the exciton density profiles of the devices with different QD concentrations were extracted.Subsequently,the corresponding luminance characteristics of the devices were calculated,where the results are in good agreement with the experimental data.

非掺杂型Si/SiGe异质结外延与表征

以自旋为编码单元的硅基半导体量子计算与传统微电子工艺兼容,易拓展且可以同位素纯化提高退相干时间,因而备受关注.本研究工作通过分子束外延生长了高质量非掺杂型Si/SiGe异质结并测试了二维电子气迁移率.球差电镜观察到原子级尖锐界面,原子力显微镜表征显示其表面均方根粗糙度仅为0.44 nm,低温下迁移率达到20.21×10^(4)cm^(2)·V^(–1)·s^(–1).不同栅压下载流子浓度和迁移率的幂指数为1.026,材料丁格比值在7—12之间,表明载流子主要受到背景杂质散射和半导体/氧化物的界面散射.

Data and Model Driven Task Offloading Strategy in the Dynamic Mobile Edge Computing System

Mobile Edge Computing(MEC)provides communication and computational capabilities for the industrial Internet,meeting the demands of latency-sensitive tasks.Nevertheless,traditional model-driven task offloading strategies face challenges in adapting to situations with unknown network communication status and computational capabilities.This limitation becomes notably significant in complex industrial networks of high-speed railway.Motivated by these considerations,a data and model-driven task offloading problem is proposed in this paper.A redundant communication network is designed to adapt to anomalous channel states when tasks are offloaded to edge servers.The link switching mechanism is executed by the train according to the attributes of the completed task.The task offloading optimization problem is formulated by introducing data-driven prediction of communication states into the traditional model.Furthermore,the optimal strategy is achieved by employing the informer-based prediction algorithm and the quantum particle swarm optimization method,which effectively tackle real-time optimization problems due to their low time complexity.The simulations illustrate that the data and model-driven task offloading strategy can predict the communication state in advance,thus reducing the cost of the system and improving its robustness.

三维量子芯片硅通孔热应力对阻止区的影响

基于材料的温度相关特性,研究了0.02~300 K极限温度范围内三维超导量子芯片中热导硅通孔(TTSV)热应力对有源层阻止区(KOZ)的影响。利用有限元模拟方法,基于单个TTSV的KOZ特性,发现阵列TTSV间的相对角度(θ_(R))和间距(L)的变化会改变热应力相互作用的方式和程度。增大θ_(R)可减小Si衬底的电子迁移率变化以及KOZ的连通度和面积。θ_(R)为0°时,TTSV排布整齐,MOSFET易于布置,增大L可减小电子迁移率变化以及KOZ的连通度和面积;θ_(R)为45°时,可用于布置MOSFET的区域较零散,但减小L可减小电子迁移率变化和KOZ面积,且L对特征点处电子迁移率和KOZ连通度影响很小。研究结果可为三维超导量子芯片中TTSV和读出/控制电路的优化布置提供指导。

Quantum-Mechanical Study on Surrounding-Gate Metal-Oxide-Semiconductor Field-Effect Transistors

As the channel length of metal-oxide-semiconductor field-effect transistors （MOSFETs） scales into the nanometer regime, quantum mechanical effects are becoming more and more significant. In this work, a model for the surrounding-gate （SG） nMOSFET is developed. The SchrSdinger equation is solved analytically. Some of the solutions are verified via results obtained from simulations. It is found that the percentage of the electrons with lighter conductivity mass increases as the silicon body radius decreases, or as the gate voltage reduces, or as the temperature decreases. The eentroid of inversion-layer is driven away from the silicon-oxide interface towards the silicon body, therefore the carriers will suffer less scattering from the interface and the electrons effective mobility of the SG nMOSFETs will be enhanced.

QUANTUM MECHANICAL MODEL AND SIMULATION OF GaAs/AlGaAs QUANTUM WELL INFRARED PHOTODETECTOR-Ⅱ ELECTRICAL ASPECTS

A complete quantum mechanical model for GaAs/AlGaAs quantum well infrared photodetectors(QWIPs) was presented. The photocurrent was investigated by the optical transition(absorption coefficient)between the ground state and the excited states due to the nonzero component of the radiation field along the sample growth direction. By studying the inter diffusion of the Al atoms across the GaAs/AlGaAs heterointer faces, the mobility of the drift diffusion carriers in the excited states was calculated. As a result, the measurement results of the dark current and the photocurrent spectra are explained theoretically.

High electron mobility of modulation doped GaAs after growing InP by solid source molecular beam epitaxy

Modulation-doped AlGaAs/GaAs structures were grown on GaAs(100) substrate by solid source molecular beam epitaxy(SSMBE) system. The factors which influence the electron mobility were investigated. After growing InP based materials, growth conditions were deteriorated, but by an appropriate method and using reasonable process high electron mobility(77 K) of more than 1.50×10~5 cm^2/(V·s) can still be obtained. The structures and growth conditions have been studied and optimized via Hall measurements. For a typical sample, 2.0 K electron mobility as high as 1.78×10~6 cm^2/(V·s) is achieved, and the quantum Hall oscillation phenomena can be observed.

基于量子密钥的移动终端保密通信方案研究

随着移动互联网的高速发展,移动终端已被广泛普及,与此同时,网络信息安全面临严峻挑战。为解决移动通信信息安全问题,满足移动终端高安全保密通信需求,基于量子密钥技术,利用量子制密系统和量子密钥管理系统,将量子密钥分发到每个移动终端,通过密钥中转加密的方式实现移动终端保密通信。该方案可以为政企和个人的移动终端保密通信提供安全保障。

基于移动sink的无线传感器网络数据采集方案

对无线传感器网络的数据采集问题进行了研究,提出了一种基于可移动sink节点的数据采集方案DCSR。DCSR包括2个阶段,第1个阶段根据传感器节点的分布情况确定一批采集点,第2个阶段使用量子遗传算法求解出经过采集点的最短回路。计算完之后,sink沿着这条回路运动,周期性进行数据采集。理论分析和仿真实验表明,DCSR的性能较好,采集的数据量也更多。

陆地量子移动通信最优纠缠多址中继方案

为了解决EPR纠缠通过大气空间在通信终端之间的分发问题,使量子移动用户之间及时建立纠缠,提出了一种新的陆地量子移动通信网络的量子纠缠多址中继方案和分区服务模型.分析比较了基于量子受控非门和极化分束器的两种纠缠纯化方法.结果表明:即使在量子移动终端之间没有共享EPR纠缠对的情况下,通过纠缠纯化和量子多址中继,仍然可以完成量子态的无线传输,并且其传输时延与所经过的链路距离和基站数目无关;因此,从数据传输时延的观点来看,该方案是最优的.本研究对于构建大规模量子移动通信网具有一定的奠基作用.

基于纠缠度计算的量子移动信令相邻小区越区切换策略及仿真

信令是任何通信系统必不可少的重要组成部分,量子移动通信也不例外.然而,关于量子移动通信信令在相邻小区越区切换过程中的切换策略问题的研究迄今尚未展开.随着移动用户位置的改变,用户与基站间的纠缠度不断变化.本文提出了基于纠缠度计算的量子信令在相邻小区的越区切换策略.首先定义了信令纠缠度与距离的关系,然后研究了用户位置改变所导致用户与基站之间信令纠缠度的变化情况,提出了基于纠缠度阈值计算的切换算法.仿真结果表明,本文所提出的信令切换策略可靠性高,能够在各基站之间实现平稳切换.因此,本研究对于构造量子移动通信网络的信令系统及其标准的制定具有极为重要的技术支撑作用.

基于二进制编码QPSO算法的移动机器人路径规划

在分析量子粒子群算法的基础上,针对离散搜索空间的问题,提出了二进制编码的量子粒子群算法。在算法中,重新定义了粒子的位置距离矢量,调整了搜索空间的迭代方程,并引入了多点交叉和精英保留的策略,保证全局收敛的同时加快粒子的收敛速度。并使用De Jong’s测试函数对本算法和二进制粒子群算法进行了比较,最后使用二进制编码量子粒子群算法对机器人路径规划进行了仿真实验。

免疫Agent和量子粒子群优化的入侵检测方法研究

针对传统入侵检测系统检测速度慢和误检率高的问题,将免疫原理、移动Agent技术和量子粒子群优化算法相结合,提出了基于免疫Agent和粒子群优化算法的入侵检测模型。介绍了系统模型与体系结构,并对系统性能进行仿真实验。实验结果对比表明,系统能提高传统入侵检测系统的检测速度和降低误检率。