Physico−mathematical model of the voltage−current characteristics of light-emitting diodes with quantum wells based on the Sah−Noyce−Shockley recombination mechanism

Herein,a physical and mathematical model of the voltage−current characteristics of a p−n heterostructure with quantum wells(QWs)is prepared using the Sah−Noyce−Shockley(SNS)recombination mechanism to show the SNS recombination rate of the correction function of the distribution of QWs in the space charge region of diode configuration.A comparison of the model voltage−current characteristics(VCCs)with the experimental ones reveals their adequacy.The technological parameters of the structure of the VCC model are determined experimentally using a nondestructive capacitive approach for determining the impurity distribution profile in the active region of the diode structure with a profile depth resolution of up to 10Å.The correction function in the expression of the recombination rate shows the possibility of determining the derivative of the VCCs of structures with QWs with a nonideality factor of up to 4.

The quantum Kirchhoff equation and quantum current and energy spectrum of a homogeneous mesoscopic dissipation transmission line

On the basis of quantization of charge, the loop equations of quantum circuits are investigated by using the Helsenberg motion equation for a mesoscopic dissipation transmission line. On the supposition that the system has a symmetry under translation in charge space, the quantum current and the quantum energy spectrum in the mesoscopic transmission llne are given by solving their eigenvalue equations. Results show that the quantum current and the quantum energy spectrum are not only related to the parameters of the transmission llne, but also dependent on the quantized character of the charge obviously.

Spin current and its heat effect in a multichannel quantum wire with Rashba spin-orbit coupling

Using the perturbation method, we theoretically study the spin current and its heat effect in a multichannel quantum wire with Rashba spin-orbit coupling. The heat generated by the spin current is calculated. With the increase of the width of the quantum wire, the spin current and the heat generated both exhibit period oscillations with equal amplitudes. When the quantum-channel number is doubled, the oscillation periods of the spin current and of the heat generated both decrease by a factor of 2. For the spin current js,xy, the amplitude increases with the decrease of the quantum channel; while the amplitude of the spin current js,yx remains the same. Therefore we conclude that the effect of the quantum-channel number on the spin current js,xy is greater than that on the spin current js,yx. The strength of the Rashba spin-orbit coupling is tunable by the gate voltage, and the gate voltage can be varied experimentally, which implies a new method of detecting the. spin current. In addition, we can control the amplitude and the oscillation period of the spin current by controlling the number of the quantum channels. All these characteristics of the spin current will be very important for detecting and controlling the spin current, and especially for designing new spintronic devices in the future.

Photon-mediated spin-polarized current in a quantum dot under thermal bias

Spin-polarized current generated by thermal bias across a system composed of a quantum dot （QD） connected to metallic leads is studied in the presence of magnetic and photon fields. The current of a certain spin orientation vanishes when the dot level is aligned to the lead＇s chemical potential, resulting in a 100% spin-polarized current. The spin-resolved current also changes its sign at the two sides of the zero points. By tuning the system＇s parameters, spin-up and spin-down currents with equal strength may flow in opposite directions, which induces a pure spin current without the accompany of charge current. With the help of the thermal bias, both the strength and the direction of the spin-polarized current can be manipulated by tuning either the frequency or the intensity of the photon field, which is beyond the reach of the usual electric bias voltage.

Frequency-locking and threshold current-lowering effects of a quantum cascade laser and an application in gas detection field

In this paper,the frequency-locking and threshold current-lowering effects of a quantum cascade laser are studied and achieved.Combined with cavity-enhanced absorption spectroscopy,the noninvasive detection of H_2 with a prepared concentration of 500 ppm in multiple dissolved gases is performed and evaluated.The high frequency selectivity of 0.0051 cm^-1 at an acquisition time of 1 s allows the sensitive detection of the（1-0） S（l） band of H_2 with a high accuracy of（96.53±0.29）%and shows that the detection limit to an absorption line of 4712.9046 cm^-1 is approximately（17.26±0.63） ppm at an atmospheric pressure and a temperature of 20 ℃.

Spin-polarized current in double quantum dots

We analyze the transport through asymmetric double quantum dots with an inhomogeneous Zeeman splitting in the presence of crossed dc and ac magnetic fields. A strong spin-polarized current can be obtained by changing the dc magnetic field. It is mainly due to the resonant tunnelling. But for the ferromagnetic right electrode, the electron spin resonance also plays an important role in transport. We show that the double quantum dots with three-level mixing under crossed dc and ac magnetic fields can act not only as a bipolar spin filter but also as a spin inverter under suitable conditions.

Persistent spin current in a quantum wire with weak Dresselhaus spin-orbit coupling

The spin current in a parabolically confined semiconductor hcterojunction quantum wire with Drcsselhaus spinorbit coupling is theoretically studied by using the perturbation method. The formulae of the elements for linear and angular spin current densities are derived by using the recent definition for spin current based on spin continuity equation. It is found that the spin current in this Dresselhaus spin-orbit coupling quantum wire is antisymmetrical, which is different from that in Rashba model due to the difference in symmetry between these two models. Some numerical examples for the result are also demonstrated and discussed.

Chiral current regulation and detection of Berry phase in triangular triple quantum dots

Based on the hierarchical equations of motion(HEOM)calculation,we theoretically investigate the corresponding control of a triangular triple-quantum-dots(TTQD)ring which is connected to two reservoirs.We initially demonstrate by adding bias voltage and further adjusting the coupling strength between quantum dots,the chiral current induced by bias will go through a transformation of clockwise to counterclockwise direction and an unprecedented effective Hall angle will be triggered.The transformation is very rapid,with a corresponding characteristic time of 80-200 ps.In addition,by adding a magnetic flux to compensate for the chiral current in the original system,we elucidate the relationship between the applied magnetic flux and the Berry phase,which can realize direct measurement of the chiral current and reveal the magnetoelectric coupling relationship.

Persistent Spin Current in a Hard-Wall Confining Quantum Wire with Weak Dresselhaus Spin-Orbit Coupling

We investigate theoretically the spin current in a quantum wire with weak Dresselhaus spin-orbit coupling connected to two normal conductors. Both the quantum wire and conductors are described by a hard-wall confining potential. Using the electron wave-functions in the quantum wire and a new definition of spin current, we have calculated the elements of linear spin current density j^Ts,xi and j^Ts,yi（i=x, y, z）. We find that the elements j^Ts,xx and j^Ts,yy have a antisymmetrical relation and the element j^Ts,yz has the same amount levelas j^Ts,xx and j^Ts,yy. We also find a net linear spin current density, which has peaks at the center of quantum wire. The net linear spin current can induce a linear electric field, which may imply a way of spin current detection.

Pure spin-current diode based on interacting quantum dot tunneling junction

A magnetic field-controlled spin-current diode is theoretically proposed,which consists of a junction with an interacting quantum dot sandwiched between a pair of nonmagnetic electrodes.By applying a spin bias VS across the junction,a pure spin current can be obtained in a certain gate voltage regime,regardless of whether the Coulomb repulsion energy exists.More interestingly,if we applied an external magnetic field on the quantum dot,we observed a clear asymmetry in the spectrum of spin current IS as a function of spin bias,while the charge current always decays to zero in the Coulomb blockade regime.Such asymmetry in the current profile suggests a spin diode-like behavior with respect to the spin bias,while the net charge through the device is almost zero.Different from the traditional charge current diode,this design can change the polarity direction and rectifying ability by adjusting the external magnetic field,which is very convenient.This device scheme can be compatible with current technologies and has potential applications in spintronics or quantum processing.

Detection of spin current through a quantum dot with Majorana bound states

The spin transport properties are theoretically investigated when a quantum dot(QD)is side-coupled to Majorana bound states(MBSs)driven by a symmetric dipolar spin battery.It is found that MBSs have a great effect on spin transport properties.The peak-to-valley ratio of the spin current decreases as the coupling strength between the MBS and the QD increases.Moreover,a non-zero charge current with two resonance peaks appears in the system.In the extreme case where the dot-MBS coupling strength is strong enough,the spin current and the charge current are both constants in the non-resonance peak range.When considering the effect of the Zeeman energy,it is interesting that the resonance peak at the higher energy appears one shoulder.And the shoulder turns into a peak when the Zeeman energy is big enough.In addition,the coupling strength between the two MBSs weakens their effects on the currents of the system.These results are helpful for understanding the MBSs signature in the transport spectra.

Photon-Assisted Heat Generation by Electric Current in a Quantum Dot Attached to Ferromagnetic Leads

Heat generated by electric current in a quantum dot device contacting a phonon bath is studied using the non- equilibrium Green function technique. Spin-polarized current is generated owing to the Zeeman splitting of the dot level. The current＇s strength and the spin polarization are further manipulated by changing the frequency of an applied photon field and the ferromagnetism on the leads. We find that the associated heat by this spin- polarized current emerges even if the bias voltage is smaller than the phonon energy quanta and obvious negative differential of the heat generation develops when the photon frequency exceeds that of the phonon. It is also found that both the strength and the resonant peaks＇ position of the heat generation can be tuned by changing the value and the arrangement configurations of the magnetic moments of the two leads, and then provides an effective method to generate large spin-polarized current with weak heat. Such a result may be useful in designing low energy consumption spintronic devices.

Anomalous Josephson current in quantum anomalous Hall insulator-based superconducting junctions with a domain wall structure

We theoretically study the Josephson effect in a quantum anomalous Hall insulator(QAHI)nanoribbon with a domain wall structure and covered by the superconductor.The anomalous Josephson current,the nonzero supercurrent at the zero superconducting phase difference,appears with the nonzero magnetization and the suitable azimuth angle of the domain wall.Dependent on the configuration of the domain wall,the anomalous current peaks in the Bloch type but disappears in the Néel type because the y-component of magnetization is necessary to break symmetry to arouse the anomalous current.The phase shift of the anomalous current is tunable by the magnetization,the azimuth angle,or the thickness of the domain wall.By introducing a bare QAHI region in the middle of the junction which is not covered by the superconductor,the anomalous Josephson effect is enhanced such that the phase shift can exceedπ.Thus,a continuous change between 0 andπjunctions is realized via regulating the configuration of the domain wall or the magnetization strength.As long as an s-wave superconductor is placed on the top of the QAHI with a domain wall structure,this proposal can be experimentally fabricated and useful for the phase battery or superconducting quantum bit.

Development of Surface Grating Distributed Feedback Quantum Cascade Laser for High Output Power and Low Threshold Current Density

We report on the room-temperature cascade laser （QCL） at λ -4.7μm. cw operation of a surface grating Both grating design and material distributed feedback （DFB） quantum optimization are used to decrease the threshold current density and to increase the output power. For a high-reflectivity-coated 13-μm-wide and 4- mm-long laser, high wall-plug efficiency of 6% is obtained at 20℃ from a single facet producing over I W of ew output power. The threshold current density of DFB QCL is as low as 1.13kA/cm^2 at 10℃ and 1.34kA/cm2 at 30℃ in cw mode. Stable single-mode emission with a side-mode suppression ratio of about 30 dB is observed in tile working temperature range of 20-50℃.

Direct Tunneling Currents Through Gate Dielectrics in Deep Submicron MOSFETs

A direct tunneling model through gate dielectric s in CMOS devices in the frame of WKB approximation is reported.In the model,an im proved one-band effective mass approximation is used for the hole quantization, where valence band mixing is taken into account.By comparing to the experiments, the model is demonstrated to be applicable to both electron and hole tunneling c urrents in CMOS devices.The effect of the dispersion in oxide energy gap on the tunneling current is also studied.This model can be further extended to study th e direct tunneling current in future high-k materials.

Modeling of Gate Tunneling Current for Nanoscale MOSFETs with High-k Gate Stacks

A quantum model based on solutions to the Schrodinger-Poisson equations is developed to investigate the device behavior related togate tunneling current for nanoscale MOSFETs with high-k gate stacks. This model can model various MOS device structures with combinations of high-k dielectric materials and multilayer gate stacks,revealing quantum effects on the device performance. Comparisons are made for gate current behavior between nMOSFET and pMOSFET high- k gate stack structures. The results presented are consistent with experimental data, whereas a new finding for an optimum nitrogen content in HfSiON gate dielectric requires further experimental verifications.

Ground-state entanglement in a three-spin transverse Ising model with energy current

The ground-state entanglement associated with a three-spin transverse Ising model is studied. By introducing an energy current into the system, a quantum phase transition to energy-current phase may be presented with the variation of external magnetic field; and the ground-state entanglement varies suddenly at the critical point of quantum phase transition. In our model, the introduction of energy current makes the entanglement between any two qubits become maximally robust.

Persistent Currents in the Double Aharonov-Bohm Ring Connected to Electron Reservoirs

We study persistent currents in the double Aharonov-Bohm ring connected to two electron reservoirs by quantum waveguide theory. It is found that the persistent currents in the double Aharonov-Bohm ring depend .on the direction of the current flow from one reservoir to another. When the direction of the current flow reverses, tl2e persistent current in each ring of the double Aharonov-Bohm ring changes. If the two rings are of the same size, the persistent currents in the left and the right rings exchange at the reversal of the current flow direction.

Evaluation of polarization field in InGaN/GaN multiple quantum well structures by using electroluminescence spectra shift

In order to investigate the inherent polarization intensity in InGaN/GaN multiple quantum well(MQW) structures,the electroluminescence(EL) spectra of three samples with different GaN barrier thicknesses of 21.3 nm, 11.4 nm, and 6.5 nm are experimentally studied. All of the EL spectra present a similar blue-shift under the low-level current injection,and then turns to a red-shift tendency when the current increases to a specific value, which is defined as the turning point.The value of this turning point differs from one another for the three InGaN/GaN MQW samples. Sample A, which has the GaN barrier thickness of 21.3 nm, shows the highest current injection level at the turning point as well as the largest value of blue-shift. It indicates that sample A has the maximum intensity of the polarization field. The red-shift of the EL spectra results from the vertical electron leakage in InGaN/GaN MQWs and the corresponding self-heating effect under the high-level current injection. As a result, it is an effective approach to evaluate the polarization field in the InGaN/GaN MQW structures by using the injection current level at the turning point and the blue-shift of the EL spectra profiles.

Quantum transport characteristics in single and multiple N-channel junctionless nanowire transistors at low temperatures

Single and multiple n-channel junctionless nanowire transistors （JNTs） are fabricated and experimentally investigated at variable temperatures. Clear current oscillations caused by the quantum-confinement effect are observed in the curve of drain current versus gate voltage acquired at low temperatures （10 K-100 K） and variable drain bias voltages （10 mV- 90 mV）. Transfer characteristics exhibit current oscillation peaks below flat-band voltage （VFB） at temperatures up to 75 K, which is possibly due to Coulomb-blocking from quantum dots, which are randomly formed by ionized dopants in the just opened n-type one-dimensional （1D） channel of silicon nanowires. However, at higher voltages than VFB, regular current steps are observed in single-channel JNTs, which corresponds to the fully populated subbands in the 1D channel. The subband energy spacing extracted from transconductance peaks accords well with theoretical predication. However, in multiple-channel JNT, only tiny oscillation peaks of the drain current are observed due to the combination of the drain current from multiple channels with quantum-confinement effects.