The optical catastrophic damage that usually occurs at the cavity surface of semiconductor lasers has become the main bottleneck affecting the improvement of laser output power and long-term reliability.To improve the...The optical catastrophic damage that usually occurs at the cavity surface of semiconductor lasers has become the main bottleneck affecting the improvement of laser output power and long-term reliability.To improve the output power of 680 nm AlGaInP/GaInP quantum well red semiconductor lasers,Si-Si_(3)N_(4)composited dielectric layers are used to induce its quantum wells to be intermixed at the cavity surface to make a non-absorption window.Si with a thickness of 100 nm and Si_(3)N_(4)with a thickness of 100 nm were grown on the surface of the epitaxial wafer by magnetron sputtering and PECVD as diffusion source and driving source,respectively.Compared with traditional Si impurity induced quantum well intermixing,this paper realizes the blue shift of 54.8 nm in the nonabsorbent window region at a lower annealing temperature of 600 ℃ and annealing time of 10 min.Under this annealing condition,the wavelength of the gain luminescence region basically does not shift to short wavelength,and the surface morphology of the whole epitaxial wafer remains fine after annealing.The application of this process condition can reduce the difficulty of production and save cost,which provides an effective method for upcoming fabrication.展开更多
A method of QWI ( quantum well intermixing) realizing through plasma-enhanced chemical vapordepositiom (PECVD) SiO2 film following ion implantation was investigated. PECVD 200 mn SiO2 film after 160 keV phosphorus...A method of QWI ( quantum well intermixing) realizing through plasma-enhanced chemical vapordepositiom (PECVD) SiO2 film following ion implantation was investigated. PECVD 200 mn SiO2 film after 160 keV phosphorus(P) ion implantation was performed to induce InP-based multiple-quantum-well (MQW) laser structural intermixing, annealing process was carried out at 780 ℃ for 30 seconds under N2 flue, the blue shift ofphotoluminescenee (PL) peak related to implanted dose : 1 × 10^11, 1 × 10^12, 1×10^13 ,3 × 10^13 , 7× 10^13 ion/ cm^2 is 22 nm, 65 nm, 104 nm, 109 nm, 101 nm, respectively. Under the same conditions, by comparing the blue shift of PL peak with P ion implantation only, slight differentiation between the two methods was observed, and results reveal that the defects in the implanting layers generated by ion implantation are much more than those in SiO2 film. So, the blue shift results mainly from ion implantation. However, SiO2 film also may promote the quantum well intermixing.展开更多
Electroabsorption modulators combining Franz-Keldysh effect and quantum confined Stark effect have been mono-lithically integrated with tunnel-injection quantum-well distributed feedback lasers using a quantum well in...Electroabsorption modulators combining Franz-Keldysh effect and quantum confined Stark effect have been mono-lithically integrated with tunnel-injection quantum-well distributed feedback lasers using a quantum well intermixing method. Superior characteristics such as extinction ratio and temperature insensitivity have been demonstrated at wide temperature ranges.展开更多
Output power and reliability are the most important characteristic parameters of semiconductor lasers.However,catas-trophic optical damage(COD),which usually occurs on the cavity surface,will seriously damage the furt...Output power and reliability are the most important characteristic parameters of semiconductor lasers.However,catas-trophic optical damage(COD),which usually occurs on the cavity surface,will seriously damage the further improvement of the output power and affect the reliability.To improve the anti-optical disaster ability of the cavity surface,a non-absorption window(NAW)is adopted for the 915 nm InGaAsP/GaAsP single-quantum well semiconductor laser using quantum well mix-ing(QWI)induced by impurity-free vacancy.Both the principle and the process of point defect diffusion are described in detail in this paper.We also studied the effects of annealing temperature,annealing time,and the thickness of SiO_(2) film on the quan-tum well mixing in a semiconductor laser with a primary epitaxial structure,which is distinct from the previous structures.We found that when compared with the complete epitaxial structure,the blue shift of the semiconductor laser with the primary epi-taxial structure is larger under the same conditions.To obtain the appropriate blue shift window,the primary epitaxial struc-ture can use a lower annealing temperature and shorter annealing time.In addition,the process is less expensive.We also pro-vide references for upcoming device fabrication.展开更多
This paper presents a new method based on spatial controlling in quantum well intermixing in InP/InGaAsP structures using ICP technology.The degree of bandgap energy shift in the same wafer can be controlled flexibly ...This paper presents a new method based on spatial controlling in quantum well intermixing in InP/InGaAsP structures using ICP technology.The degree of bandgap energy shift in the same wafer can be controlled flexibly using masks with different duty ratios.With an optimal condition including ICP-RIE etching depth, SiO_2 deposition,and RTA process,five different degrees of blue-shift with maximum of 75 nm were obtained in the same sample.The result shows that our method is an effective way to fabricate monolithic integration devices, especially in multi-bandgap structures.展开更多
We report a monolithic integrated dual-wavelength laser diode based on a distributed Bragg reflector (DBR) composite resonant cavity. The device consists of three sections, a DBR grating section, a passive phase sec...We report a monolithic integrated dual-wavelength laser diode based on a distributed Bragg reflector (DBR) composite resonant cavity. The device consists of three sections, a DBR grating section, a passive phase section, and an active gain section. The gain section facet is cleaved to work as a laser cavity mirror. The other laser mirror is the DBR grating, which also functions as a wavelength filter and can control the number of wavelengths involved in the laser action. The reflection bandwidth of the DBR grating is fabricated to have an appropriate value to make the device work at the dual-wavelength lasing state. We adopt the quantum well intermixing (QWI) technique to provide low-absorption loss grating and passive phase section in the fabrication process. By tuning the injection currents on the DBR and the gain sections, the device can generate 0.596 nm-spaced dual-wavelength lasing at room temperature.展开更多
A 100-μm-long electroabsorption modulator monolithically integrated with passive waveguides at the input and output ports is fabricated through ion implantation induced quantum well intermixing, using only a twostep ...A 100-μm-long electroabsorption modulator monolithically integrated with passive waveguides at the input and output ports is fabricated through ion implantation induced quantum well intermixing, using only a twostep low-pressure metal-organic vapor phase epitaxial process. An InGaAsP/InGaAsP intra-step quantum well is introduced to the active region to improve the modulation properties. In the experiment high modulation speed and high extinction ratio are obtained simultaneously, the electrical-to-optical frequency response (E/O response) without any load termination reaches to 22 GHz, and extinction ration is as high as 16 dB.展开更多
基金supported by the National Natural Science Foundation of China(NNSFC)(Grant No.62174154).
文摘The optical catastrophic damage that usually occurs at the cavity surface of semiconductor lasers has become the main bottleneck affecting the improvement of laser output power and long-term reliability.To improve the output power of 680 nm AlGaInP/GaInP quantum well red semiconductor lasers,Si-Si_(3)N_(4)composited dielectric layers are used to induce its quantum wells to be intermixed at the cavity surface to make a non-absorption window.Si with a thickness of 100 nm and Si_(3)N_(4)with a thickness of 100 nm were grown on the surface of the epitaxial wafer by magnetron sputtering and PECVD as diffusion source and driving source,respectively.Compared with traditional Si impurity induced quantum well intermixing,this paper realizes the blue shift of 54.8 nm in the nonabsorbent window region at a lower annealing temperature of 600 ℃ and annealing time of 10 min.Under this annealing condition,the wavelength of the gain luminescence region basically does not shift to short wavelength,and the surface morphology of the whole epitaxial wafer remains fine after annealing.The application of this process condition can reduce the difficulty of production and save cost,which provides an effective method for upcoming fabrication.
基金Funded bythe National Natural Science Foundation of China(No.60276013)
文摘A method of QWI ( quantum well intermixing) realizing through plasma-enhanced chemical vapordepositiom (PECVD) SiO2 film following ion implantation was investigated. PECVD 200 mn SiO2 film after 160 keV phosphorus(P) ion implantation was performed to induce InP-based multiple-quantum-well (MQW) laser structural intermixing, annealing process was carried out at 780 ℃ for 30 seconds under N2 flue, the blue shift ofphotoluminescenee (PL) peak related to implanted dose : 1 × 10^11, 1 × 10^12, 1×10^13 ,3 × 10^13 , 7× 10^13 ion/ cm^2 is 22 nm, 65 nm, 104 nm, 109 nm, 101 nm, respectively. Under the same conditions, by comparing the blue shift of PL peak with P ion implantation only, slight differentiation between the two methods was observed, and results reveal that the defects in the implanting layers generated by ion implantation are much more than those in SiO2 film. So, the blue shift results mainly from ion implantation. However, SiO2 film also may promote the quantum well intermixing.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 60736036,60706009,60777021 and 60702006)the National Basic Research Program of China (Grant Nos. 2006CB604901 and 2006CB604902)the National High Technology Research and Development Program of China (Grant Nos. 2007AA03Z419,2007AA03Z417 and 2009AA03Z442)
文摘Electroabsorption modulators combining Franz-Keldysh effect and quantum confined Stark effect have been mono-lithically integrated with tunnel-injection quantum-well distributed feedback lasers using a quantum well intermixing method. Superior characteristics such as extinction ratio and temperature insensitivity have been demonstrated at wide temperature ranges.
基金This work was supported by the National Natural Science Foundation of China(NNSFC)(Grant No.62174154).
文摘Output power and reliability are the most important characteristic parameters of semiconductor lasers.However,catas-trophic optical damage(COD),which usually occurs on the cavity surface,will seriously damage the further improvement of the output power and affect the reliability.To improve the anti-optical disaster ability of the cavity surface,a non-absorption window(NAW)is adopted for the 915 nm InGaAsP/GaAsP single-quantum well semiconductor laser using quantum well mix-ing(QWI)induced by impurity-free vacancy.Both the principle and the process of point defect diffusion are described in detail in this paper.We also studied the effects of annealing temperature,annealing time,and the thickness of SiO_(2) film on the quan-tum well mixing in a semiconductor laser with a primary epitaxial structure,which is distinct from the previous structures.We found that when compared with the complete epitaxial structure,the blue shift of the semiconductor laser with the primary epi-taxial structure is larger under the same conditions.To obtain the appropriate blue shift window,the primary epitaxial struc-ture can use a lower annealing temperature and shorter annealing time.In addition,the process is less expensive.We also pro-vide references for upcoming device fabrication.
基金supported by the State Key Development Program for Basic Research of China(No.2010CB327603)the National High Technology Research and Development Program of China(No.2011AA010304)
文摘This paper presents a new method based on spatial controlling in quantum well intermixing in InP/InGaAsP structures using ICP technology.The degree of bandgap energy shift in the same wafer can be controlled flexibly using masks with different duty ratios.With an optimal condition including ICP-RIE etching depth, SiO_2 deposition,and RTA process,five different degrees of blue-shift with maximum of 75 nm were obtained in the same sample.The result shows that our method is an effective way to fabricate monolithic integration devices, especially in multi-bandgap structures.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 60736036 and 61021003)the National Basic Research Program of China (Grant No. 2011CB301702)
文摘We report a monolithic integrated dual-wavelength laser diode based on a distributed Bragg reflector (DBR) composite resonant cavity. The device consists of three sections, a DBR grating section, a passive phase section, and an active gain section. The gain section facet is cleaved to work as a laser cavity mirror. The other laser mirror is the DBR grating, which also functions as a wavelength filter and can control the number of wavelengths involved in the laser action. The reflection bandwidth of the DBR grating is fabricated to have an appropriate value to make the device work at the dual-wavelength lasing state. We adopt the quantum well intermixing (QWI) technique to provide low-absorption loss grating and passive phase section in the fabrication process. By tuning the injection currents on the DBR and the gain sections, the device can generate 0.596 nm-spaced dual-wavelength lasing at room temperature.
基金Project supported by the National High Technology Research and Development Program of China (No.2006AA01Z256)the State Key Development Program for Basic Research of China (Nos.2006CB604901,2006CB604902)the National Natural Science Foundationof China (No.90401025)
文摘A 100-μm-long electroabsorption modulator monolithically integrated with passive waveguides at the input and output ports is fabricated through ion implantation induced quantum well intermixing, using only a twostep low-pressure metal-organic vapor phase epitaxial process. An InGaAsP/InGaAsP intra-step quantum well is introduced to the active region to improve the modulation properties. In the experiment high modulation speed and high extinction ratio are obtained simultaneously, the electrical-to-optical frequency response (E/O response) without any load termination reaches to 22 GHz, and extinction ration is as high as 16 dB.