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Enhanced performance of InGaN/GaN multiple quantum well solar cells with double indium content 被引量:1
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作者 赵璧君 陈鑫 +7 位作者 任志伟 童金辉 王幸福 李丹伟 卓祥景 章俊 易翰翔 李述体 《Chinese Physics B》 SCIE EI CAS CSCD 2013年第8期698-701,共4页
The performance of a multiple quantum well (MQW) InGaN solar cell with double indium content is investigated. It is found that the adoption of a double indium structure can effectively broaden the spectral response ... The performance of a multiple quantum well (MQW) InGaN solar cell with double indium content is investigated. It is found that the adoption of a double indium structure can effectively broaden the spectral response of the external quantum efficiencies and optimize the overall performance of the solar cell. Under AM1.5G illumination, the short-circuit current density (Jsc) and conversion efficiency of the solar cell are enhanced by 65% and 13% compared with those of a normal single-indium-content MQW solar cell. These improvements are mainly attributed to the expansion of the absorption spectrum and better extraction efficiency of the photon-generated carriers induced by higher polarization. 展开更多
关键词 metal-organic chemical vapor deposition GaN-based solar cells InGaN/GaN multiple quantumwells
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