We use the class of L-injective modules to define L-injective covers, and provide the characterizations of L-injective covers by the properties of kernels of homomorphisms. We prove that the right L-noetherian right L...We use the class of L-injective modules to define L-injective covers, and provide the characterizations of L-injective covers by the properties of kernels of homomorphisms. We prove that the right L-noetherian right L-hereditary ring is just such that every right R-module has an L-injective cover which is monic. We also use kernels of homomorphisms to investigate L-simple L-injective covers and give some constructions of L-simple L-injective covers.展开更多
In this article, we introduce and study the concept of n-Gorenstein injective （resp., n-Gorenstein flat） modules as a nontrivial generalization of Gorenstein injective （resp., Gorenstein flat） modules. We invest...In this article, we introduce and study the concept of n-Gorenstein injective （resp., n-Gorenstein flat） modules as a nontrivial generalization of Gorenstein injective （resp., Gorenstein flat） modules. We investigate the properties of these modules in various ways. For example, we show that the class of n-Gorenstein injective （resp., n -Gorenstein flat） modules is closed under direct sums and direct products for n ≥ 2. To this end, we first introduce and study the notions of n-injective modules and n-flat modules.展开更多
In basic homological algebra, the flat and injective dimensions of modules play an important and fundamental role. In this paper, the closely related IFP-flat and IFP-injective dimensions are introduced and studied. W...In basic homological algebra, the flat and injective dimensions of modules play an important and fundamental role. In this paper, the closely related IFP-flat and IFP-injective dimensions are introduced and studied. We show that IFP-fd（M） = IFP-id（M＋） and IFP-fd（M＋）=IFP-id（M） for any R-module M over any ring R. Let ：Z-In （resp., ＂Zgv,~） he the class of all left （resp., right） R-modules of IFP-injective （resp., IFP-flat） dimension at most n. We prove that every right R-module has an IFn- preenvelope, （IFn,IF⊥n） is a perfect cotorsion theory over any ring R, and for any ring R with IFP-id（RR） 〈 n, （IIn,II⊥n） is a perfect cotorsion theory. This generalizes and improves the earlier work （J. Algebra 242 （2001）, 447-459）. Finally, some applications are given.展开更多
The impact of the V-pits covering layer(VCL) position on the optoelectronic performance of InGaN-based green light-emitting diodes(LEDs) was investigated. It is found that earlier covering of V-pits will hinder the ho...The impact of the V-pits covering layer(VCL) position on the optoelectronic performance of InGaN-based green light-emitting diodes(LEDs) was investigated. It is found that earlier covering of V-pits will hinder the hole injection via the sidewall of V-pits, and then result in less quantum wells(QWs) participating in radioluminescence. The current-voltage characteristics show that the LEDs with earlier covering of V-pits have higher operating voltage at room temperature, and a more dramatic voltage rise with the reduction of temperature. Meanwhile, more manifested emission peaks for sidewall QWs and deeper QWs near to ntype layer was observed in the sample with earlier coveing of V-pits at cryogenic temperatures, for the reason that the holes being injected via V-pits sidewall have higher kinetic energy and could transport to deeper QWs.展开更多
Based on the experience of GIS equipment maintenance, the causes of air leakage defects of GIS equipment running in a 330 substation were analyzed. After the equipment was disassembled, the main causes of air leakage ...Based on the experience of GIS equipment maintenance, the causes of air leakage defects of GIS equipment running in a 330 substation were analyzed. After the equipment was disassembled, the main causes of air leakage were found, and a series of improvement measures were taken to eliminate the GIS equipment leakage defect. And the effective and feasible advice was put forward for this type of air leakage problem. The results lay a foundation for the safe and stable operation of GIS equipment.展开更多
基金The Tianyuan Mathematics Fund (A0324612) of China.
文摘We use the class of L-injective modules to define L-injective covers, and provide the characterizations of L-injective covers by the properties of kernels of homomorphisms. We prove that the right L-noetherian right L-hereditary ring is just such that every right R-module has an L-injective cover which is monic. We also use kernels of homomorphisms to investigate L-simple L-injective covers and give some constructions of L-simple L-injective covers.
基金The NSF(11501451)of Chinathe Fundamental Research Funds(31920150038)for the Central Universities and XBMUYJRC(201406)
文摘In this article, we introduce and study the concept of n-Gorenstein injective （resp., n-Gorenstein flat） modules as a nontrivial generalization of Gorenstein injective （resp., Gorenstein flat） modules. We investigate the properties of these modules in various ways. For example, we show that the class of n-Gorenstein injective （resp., n -Gorenstein flat） modules is closed under direct sums and direct products for n ≥ 2. To this end, we first introduce and study the notions of n-injective modules and n-flat modules.
基金supported by National Natural Science Foundation of China(10961021,11001222)
文摘In basic homological algebra, the flat and injective dimensions of modules play an important and fundamental role. In this paper, the closely related IFP-flat and IFP-injective dimensions are introduced and studied. We show that IFP-fd（M） = IFP-id（M＋） and IFP-fd（M＋）=IFP-id（M） for any R-module M over any ring R. Let ：Z-In （resp., ＂Zgv,~） he the class of all left （resp., right） R-modules of IFP-injective （resp., IFP-flat） dimension at most n. We prove that every right R-module has an IFn- preenvelope, （IFn,IF⊥n） is a perfect cotorsion theory over any ring R, and for any ring R with IFP-id（RR） 〈 n, （IIn,II⊥n） is a perfect cotorsion theory. This generalizes and improves the earlier work （J. Algebra 242 （2001）, 447-459）. Finally, some applications are given.
基金supported by the State Key Program of the National Science Foundation of China(Grant No.61334001)the National Key R&D Program of China(Grant Nos.2016YFB0400600 and 2016YFB0400601)Development Program of Jiangxi province(Grant No.20165ABC28007 and No20182ABC28003)
文摘The impact of the V-pits covering layer(VCL) position on the optoelectronic performance of InGaN-based green light-emitting diodes(LEDs) was investigated. It is found that earlier covering of V-pits will hinder the hole injection via the sidewall of V-pits, and then result in less quantum wells(QWs) participating in radioluminescence. The current-voltage characteristics show that the LEDs with earlier covering of V-pits have higher operating voltage at room temperature, and a more dramatic voltage rise with the reduction of temperature. Meanwhile, more manifested emission peaks for sidewall QWs and deeper QWs near to ntype layer was observed in the sample with earlier coveing of V-pits at cryogenic temperatures, for the reason that the holes being injected via V-pits sidewall have higher kinetic energy and could transport to deeper QWs.
文摘Based on the experience of GIS equipment maintenance, the causes of air leakage defects of GIS equipment running in a 330 substation were analyzed. After the equipment was disassembled, the main causes of air leakage were found, and a series of improvement measures were taken to eliminate the GIS equipment leakage defect. And the effective and feasible advice was put forward for this type of air leakage problem. The results lay a foundation for the safe and stable operation of GIS equipment.
