Low resistivity and highly transparent ITO conducting films for solar cell applications were fabricated at low temperature by r.f. magnetron sputtering. ITO films were deposited on glass and silicon substrate. Electri...Low resistivity and highly transparent ITO conducting films for solar cell applications were fabricated at low temperature by r.f. magnetron sputtering. ITO films were deposited on glass and silicon substrate. Electrical, optical, structural and morphological properties of the ITO films were investigated in terms of the preparation conditions. The annealing treatment has improved the properties of the ITO films at different degree. The maximum transmittance of the obtained ITO films in the visible range is over 92%, and the low resistivity for the ITO films are about 3.85×10-4 Ω·cm at 80 ℃, 80 W after annealing.展开更多
Aluminum-doped zinc oxide (AZO) thin films were deposited on sapphire (002) and glass substrates by two different sputtering techniques radio frequency magnetron cosputtering of AZO and ZnO targets and sputtering of a...Aluminum-doped zinc oxide (AZO) thin films were deposited on sapphire (002) and glass substrates by two different sputtering techniques radio frequency magnetron cosputtering of AZO and ZnO targets and sputtering of an AZO target. The dependence of the photoluminescence (PL) and transmittance properties of the AZO films deposited by cosputtering and sputtering on the AZO/ZnO target power ratio, R and the O2/Ar flow ratio, r were investigated, respectively. Only a deep level emission peak appears in the PL spectra of cosputtered AZO films whereas both UV emission and deep level emission peaks are observed in the PL spectra of sputtered AZO films. The absorption edges in the transmittance spectra of the AZO films shift to the lower wavelength region as R and r increase. Effects of crystallinity, surface roughness, PL on the transmittance of the AZO films were also explained using the X-ray diffraction (XRD), atomic force microscopy (AFM), and PL analysis results.展开更多
Fe/Ti multilayers with different modulation wavelengths (Lambda) prepared by r.f. sputtering has been investigated by using cross sectional transmission electron microscopy (XTEM). It was observed that the columnar st...Fe/Ti multilayers with different modulation wavelengths (Lambda) prepared by r.f. sputtering has been investigated by using cross sectional transmission electron microscopy (XTEM). It was observed that the columnar structure, interface morphology, and metastable phase presented at the interface of the multilayer system strongly depend on the bilayer thickness (Lambda). For high period multilayers, the waviness wavelength of interfaces is about two times broader than the column diameter. For a sample with Lambda =30 nm, its column width and waviness wavelength was about 80, and 190 nm, respectively. Both of them decreased with the reduction of Lambda, so as to nearly equal values of column diameter and waviness wavelength were obtained. The Fe and Ti grains of both 30 nm and 6 nm multilayers are polycrystalline, and have a textured structure. In short bilayer thickness (Lambda =6 nm), the intermetallic compound Fe2Ti was presented at the interfaces due to solid state reaction; for Lambda =2 nm, amorphous phase Ti-rich layer was formed at the interfaces, resulting in a sharp interface multilayer structure.展开更多
基金This project was financially supported by the Natural Science Foundation of Hebei Province, China. (No. F2005000073).
文摘Low resistivity and highly transparent ITO conducting films for solar cell applications were fabricated at low temperature by r.f. magnetron sputtering. ITO films were deposited on glass and silicon substrate. Electrical, optical, structural and morphological properties of the ITO films were investigated in terms of the preparation conditions. The annealing treatment has improved the properties of the ITO films at different degree. The maximum transmittance of the obtained ITO films in the visible range is over 92%, and the low resistivity for the ITO films are about 3.85×10-4 Ω·cm at 80 ℃, 80 W after annealing.
文摘Aluminum-doped zinc oxide (AZO) thin films were deposited on sapphire (002) and glass substrates by two different sputtering techniques radio frequency magnetron cosputtering of AZO and ZnO targets and sputtering of an AZO target. The dependence of the photoluminescence (PL) and transmittance properties of the AZO films deposited by cosputtering and sputtering on the AZO/ZnO target power ratio, R and the O2/Ar flow ratio, r were investigated, respectively. Only a deep level emission peak appears in the PL spectra of cosputtered AZO films whereas both UV emission and deep level emission peaks are observed in the PL spectra of sputtered AZO films. The absorption edges in the transmittance spectra of the AZO films shift to the lower wavelength region as R and r increase. Effects of crystallinity, surface roughness, PL on the transmittance of the AZO films were also explained using the X-ray diffraction (XRD), atomic force microscopy (AFM), and PL analysis results.
基金Financial support from National Natural Science Foundation of China and the Ministry of Science&Technology of China(Grant No.(1999064505)is acknowledged.
文摘Fe/Ti multilayers with different modulation wavelengths (Lambda) prepared by r.f. sputtering has been investigated by using cross sectional transmission electron microscopy (XTEM). It was observed that the columnar structure, interface morphology, and metastable phase presented at the interface of the multilayer system strongly depend on the bilayer thickness (Lambda). For high period multilayers, the waviness wavelength of interfaces is about two times broader than the column diameter. For a sample with Lambda =30 nm, its column width and waviness wavelength was about 80, and 190 nm, respectively. Both of them decreased with the reduction of Lambda, so as to nearly equal values of column diameter and waviness wavelength were obtained. The Fe and Ti grains of both 30 nm and 6 nm multilayers are polycrystalline, and have a textured structure. In short bilayer thickness (Lambda =6 nm), the intermetallic compound Fe2Ti was presented at the interfaces due to solid state reaction; for Lambda =2 nm, amorphous phase Ti-rich layer was formed at the interfaces, resulting in a sharp interface multilayer structure.
