Selective capture of Tl2O from flue gas with formation of p-n junction on V_(2)O_(5)-WO_(3)/TiO_(2)catalyst under working conditions

Thallium(Tl)compounds,highly toxic to biology,are usually released into flue gas during fossil/minerals combustion,and further distributed in water and soil.In this work,we fundamentally investigated the capture of gaseous Tl_(2)O by industrial V2O5-WO3/TiO_(2)catalyst under working condition in Tl-containing flue gas.Experimental and theoretical results indicated that the Tl_(2)O has significant electron-feeding capacity and easily donate electron to unoccupied orbitals of TiO_(2),leading to dismutation of Ti 2p and inartificial formation of p-n junction on TiO_(2)surface,which prompted Tl_(2)O selectively interacted with TiO_(2)in flue gas.Herein,we proposed and verified an effective way to capture gaseous Tl_(2)O,which offered almost the best choice to eliminate Tl emission from flue gas and expanded the function of the TiO_(2)-based catalyst.The formation of p-n junction on commercial V2O5-WO3/TiO_(2)catalyst under working condition was revealed for the first time,which can be a valuable reference for both heterocatalysis and electro/photocatalysis.

Electronic properties of 2D materials and their junctions

With an extensive range of distinctive features at nano meter-scale thicknesses,two-dimensional(2D)materials drawn the attention of the scientific community.Despite tremendous advancements in exploratory research on 2D materials,knowledge of 2D electrical transport and carrier dynamics still in its infancy.Thus,here we highlighted the electrical characteristics of 2D materials with electronic band structure,electronic transport,dielectric constant,carriers mobility.The atomic thinness of 2D materials makes substantially scaled field-effect transistors(FETs)with reduced short-channel effects conceivable,even though strong carrier mobility required for high performance,low-voltage device operations.We also discussed here about factors affecting 2D materials which easily enhanced the activity of those materials for various applications.Presently,Those 2D materials used in state-of-the-art electrical and optoelectronic devices because of the extensive nature of their electronic band structure.2D materials offer unprecedented freedom for the design of novel p-n junction device topologies in contrast to conventional bulk semiconductors.We also,describe the numerous 2D p-n junctions,such as homo junction and hetero junction including mixed dimensional junctions.Finally,we talked about the problems and potential for the future.

2D Modeling of Solar Cell p-n Radial Junction: Study of Photocurrent Density and Quantum Efficiency in Static Mode under Monochromatic Illumination

A theoretical study of a polysilicon solar cell with a radial junction in static regime under monochromatic illumination is presented in this paper. The junction radial solar cell geometry is illustrated and described. The carriers’ diffusion equation is established and solved under quasi-neutral base assumption with boundaries conditions and Bessel equations. New analytical expressions of electrons and holes photocurrent density and quantum efficiency are found. The wavelength and structural parameters (base radius, base thickness and wavelength) influences on photocurrent density and quantum efficiency are carried out and examined.

Visualizing light-to-electricity conversion process in InGaN/GaN multi-quantum wells with a p-n junction

Absorption and carrier transport behavior plays an important role in the light-to-electricity conversion process, which is difficult to characterize. Here we develop a method to visualize such a conversion process in the InGaN/GaN multiquantum wells embedded in a p-n junction. Under non-resonant absorption conditions, a photocurrent was generated and the photoluminescence intensity decayed by more than 70% when the p-n junction out-circuit was switched from open to short. However, when the excitation photon energy decreased to the resonant absorption edge, the photocurrent dropped drastically and the photoluminescence under open and short circuit conditions showed similar intensity. These results indicate that the escaping of the photo-generated carriers from the quantum wells is closely related to the excitation photon energy.

Thin Film of Perovskite Oxide with Atomic Scale p-n Junctions

Thin films of perovskite manganese oxide Lao.66Ca0.29K0.05MnO3（LCKMO） on Au/ITO（ITO=indium tin oxide） substrates were prepared by off-axis radio frequency magnetron sputtering and characterized by X-ray diffrac- tion（XRD）, high-resolution transmission electron microscopy（HRTEM）, and conductive atomic force microscopy （C-AFM） at room temperature. The thin films with thickness ranged from 100 nm to 300 nm basically show cubic structures with a=0.3886 nm, the same as that of the raw material used, but the structures are highly modulated. C-AFM results revealed that the atomic scale p-n junction feature of the thin films was the same as that of the single crystals. The preparation of the thin films thus further confirms the possibility of their application extending from micrometer-sized single crystals to macroscopic thin film.

Study on Porous Silicon with P-N Junction Sensor for Humidity Measurement

Porous materials used for humidity sensing have been commercialized.In this paper,the preparation and humidity sensing characteristics of porous silicon with P-N junctions (PNJPS)are studied.PNJPS is made by electro-chemical anodic etched method from silicon wafers with P-N junctions.Its porous structure is verified by scanning electronic micrograph. Experiments also show that PNJPS has high sensitivity,short response time (less than 30 seconds),and long-term stability.

2D Modeling of Solar Cell Radial Junction: Study of Carriers Charge Density and Photocurrent Density in Static Mode under Monochromatic Illumination

A theoretical study of a polysilicon solar cell with a radial junction in static regime under monochromatic illumination is presented in this paper. The junction radial solar cell geometry is illustrated and described. The carriers’ diffusion equation is established and solved under quasi-neutral base assumption with boundaries conditions and Bessel equations. New analytical expressions of electrons and holes density and photocurrent are found. The wavelength and structural parameters (base radius, emitter thickness) influences on charge carriers density and photocurrent are shown and examined.

Performance Analysis of a Radial N+/P Silicon Solar Cell in Steady State and Monochromatic Illumination

In this paper, we investigate theoretically a radial n+/p silicon solar cell in steady state and monochromatic illumination. The purpose of this work is to analyze the effect of the cell base radius on its electrical parameters. The continuity equation in cylindrical coordinates is established and solved based on Bessel functions and boundaries conditions;this led us to the photovoltage and photocurrent density in the cell. The open circuit voltage and the short circuit current density are then deduced and analyzed considering the base radius. Based on J-V and P-V curves, series and shunt resistances, fill factor and maximum power point are derived and the conversion efficiency of the cell is deduced. We showed that short circuit current density, maximum power, conversion efficiency and shunt resistance decrease with increasing base radius contrary to the open circuit voltage, the fill factor and the series resistance.

Photoelectric characteristics of silicon P–N junction with nanopillar texture:Analysis of X-ray photoelectron spectroscopy

Silicon nanopillars are fabricated by inductively coupled plasma （ICP） dry etching with the cesium chloride （CsCl） islands as masks originally from self-assembly. Wafers with nanopillar texture or planar surface are subjected to phosphorus （P） diffusion by liquid dopant source （POCl3） at 870 ℃ to form P-N junctions with a depth of 300 nm. The X-ray photoelectron spectroscopy （XPS） is used to measure the Si 2p core levels of P-N junction wafer with nanopillar texture and planar surface. With a visible light excitation, the P-N junction produces a new electric potential for photoelectric characteristic, which causes the Si 2p core level to have a energy shift compared with the spectrum without the visible light. The energy shift of the Si 2p core level is -0.27 eV for the planar P-N junction and -0.18 eV for the nanopillar one. The difference in Si 2p energy shift is due to more space lattice defects and chemical bond breaks for nanopillar compared with the planar one.

Synthesis, Characterization and Electrochemical Behavior of p-NiO/n-TiO_2/Polyaniline Composites

The p-NiO/n-TiO2/polyaniline composites were synthesized via in situ polymerization of aniline. The structure and morphology of the composites were characterized by means of X-ray diffraction（XRD）, scanning electron microscopy（SEM）, Fourier transform infrared spectroscopy（FTIR） and UV-Vis absorption spectroscopy. It was found that the p-n junction p-NiO/n-TiO2 particles were trapped in the polyaniline molecular matrix and the polyaniline was deposited on the surface of the particles to form a kind of flower cluster morphologies. The electrochemical behavior of the polyaniline composites was investigated. The electrochemical reactivity of the polyaniline was influenced by the p-NiO/n-TiO2 particles due to the effect of electron-hole pairs in these p-n junction particles. The reversibility of redox process and current intensity of the polyaniline composites with the changing of potential scan rate were also discussed.

The influence of electronic transport across interface junction between Si substrate and the root of ZnO micro-prism on field emission performance

ZnO micro-prisms are prepared on the p-type and n-type Si substrates, separately. The Ⅰ-Ⅴ curves analysed by AFM show that the interface junctions between the ZnO micro-prisms and the p-type substrate and between the ZnO micro-prisms and the n-type Si substrate exhibit p-n junction behaviour and ohmic contuct behuviour, respectively. The formation of the p-n heterojunction and ohmic contact is ascribed to the intrinsic n-type conduction of ZnO material. Better field emission performance （lower onset voltage and larger emission current） is observed from an individual ZnO micro-prism grown on the n-type Si substrate. It is suggested that the n-Si/n-ZnO interracial ohmic contact benefits the electron emission; while the p-Si/n-ZnO interface heterojunction deteriorates the electron emission.

Numerical simulation of the magnetoresistance effect controlled by electric field in p–n junction

The magnetoresistance effect of a p-n junction under an electric field which is introduced by the gate voltage at room temperature is investigated by simulation. As auxiliary models, the Lombardi CVT model and carrier generation- recombination model are introduced into a drift-diffusion transport model and carrier continuity equations. All the equa- tions are discretized by the finite-difference method and the box integration method and then solved by Newton iteration. Taking advantage of those models and methods, an abrupt junction with uniform doping is studied systematically, and the magnetoresistance as a function of doping concentration, SiO2 thickness and geometrical size is also investigated. The simulation results show that the magnetoresistance （MR） can be controlled substantially by the gate and is dependent on the polarity of the magnetic field.

Optoelectronic properties of bottom gate-defined in-plane monolayer WSe_2 p–n junction

Monolayer transition-metal dichalcogenides （TMDs） are considered to be fantastic building blocks for a wide variety of optical and optoelectronic devices such as sensors, photodetectors, and quantum emitters, owing to their direct band gap, transparency, and mechanical flexibility. The core element of many conventional electronic and optoelectronic devices is the p-n junction, in which the p- and n-types of the semiconductor are formed by chemical doping in different regions. Here, we report a series of optoelectronic studies on a monolayer WSe2 in-plane p-n photodetector, demonstrating a low- power dissipation by showing an ambipolar behavior with a reduced threshold voltage by a factor of two compared with the previous results on a lateral electrostatically doped WSe2 p-n junction. The fabrication of the device is based on a polycarbonates （PC） transfer technique and hence no electron-beam exposure induced damage to the monolayer WSe2 is expected. Upon optical excitation, the photodetector demonstrates a photoresponsivity of 0.12 mA.W-1 and a maximum external quantum efficiency of 0.03%. Our study provides an alternative platform for a flexible and transparent two- dimensional photodetector, from which we expect to further promote the development of next-generation optoelectronic devices.

全氧化镓薄膜同质p-n结

制备p-n结以及探索其物理机制在发展各种功能器件和推进其实际应用中起到关键作用.超宽禁带半导体在制备高压高频器件上有着巨大的潜力,但是氧化镓p型掺杂困难限制了氧化镓同质p-n结的制备,进而阻碍了全氧化镓基双极型器件的发展.本文通过一种先进的相转变生长技术结合溅射镀膜的方法,成功制备了n型锡掺杂β相氧化镓/p型氮掺杂β相氧化镓薄膜.本工作成功制作了全氧化镓单边突变同质p-n结二极管,并且详细分析了器件机理.该二极管实现了4×10^(4)的整流比、在40 V下9.18 mΩcm^(2)的低导通电阻、4.41 V的内建电势和1.78的理想因子,并在交流电压下表现出没有过冲的整流特性以及长期稳定性.本工作为氧化镓同质p-n结初窥门径,为氧化镓同质双极型器件奠定了基础,为高压高功率器件的应用开创了道路.

无真空、低成本Mist-CVD外延制备高质量单晶NiO/Ga_(2)O_(3)p-n异质结与器件

在氧化镓(Ga_(2)O_(3))材料p型掺杂困难的背景下,Ga_(2)O_(3)p-n异质结器件在氧化镓器件的应用中起着重要作用.因此,寻找一种高效、经济的制备方法制备Ga_(2)O_(3)异质结对器件应用具有重要意义.在这项工作中,我们成功基于低成本、无真空的雾化学气相沉积(Mist-CVD)外延制备了单晶氧化镍(NiO)和β-Ga_(2)O_(3)异质结.其中,NiO(111)和β-Ga_(2)O_(3)(-201)的XRD摇摆曲线半高宽分别为0.077°和0.807°.NiO与β-Ga_(2)O_(3)之间的能带表现为Ⅱ型异质结构.基于此异质结,我们制备了准垂直器件,器件具有明显的p-n结整流特性,反向击穿电压为117 V.本工作为β-Ga_(2)O_(3)异质p-n结的制备提供了一种低成本、高质量的方法.

纳米线在新型太阳电池中的应用研究

介绍了纳米线的研究发展历史、纳米线应用在新型太阳电池上的特点和优势、Si基纳米线结构应用在太阳电池方向的制备方法的研究进展、纳米线作为新型一维平面结构所具有的电学特性和特殊的光学减反特性。重点介绍了国内外对Si基纳米线阵列应用在太阳电池上的研究现状和最新研究进展,同时指出了研究中存在的问题以及今后的研究重点。由于纳米线特殊的载流子分离机制以及显著的光学减反特性,它在提高太阳电池效率、降低成本上仍具有很大潜力,在太阳电池领域的研究中占有重要地位。今后,纳米线太阳电池的研究仍将是国内外研究的热点问题之一。

同轴—径向波导接头分析与设计

由并矢格林函数－模式匹配法导出场表达式后，利用矩量法精确计算了同轴－径向波导接头的ｓ参数。从而确定了接头具有最佳传输特性的结构尺寸。通过对比结果。

高效径向结纳米线薄膜太阳能电池研究进展

探索新型径向结太阳能电池构架,已经成为开发新一代高效薄膜光伏技术的关键突破方向之一.基于现有成熟硅基薄膜工艺,构建纳米线薄膜径向结电池,将有利于进一步提升电池转换效率、降低成本和增强稳定性,并最终促进实现我国光伏入网电价与市场持平的目标.本文重点回顾利用基于低熔点金属诱导生长硅纳米线结构上实现的硅基薄膜径向结电池结构的进展和最新成果.

峡江水利枢纽泄水闸弧形闸门安装技术

峡江水利枢纽工程泄水闸弧形闸门结构施工和设计都比较复杂,安装工艺流程繁琐,外界不利因素较多,并且对各部位的安装精度要求很高。结合实际制定了简捷可行的施工方案,施工组织细致,达到每个环节的安装精度要求。

新型纳米太阳电池研究进展

分析了基于不同纳米材料的新型太阳电池的基本概念,如基于纳米线的径向pn结太阳电池、染料敏化太阳电池、纳米量子点太阳电池,简述了它们的各自特点及近期的研究进展。预期了高效率、低成本的纳米太阳电池将会对未来光伏产业发展产生的重要影响。