CHARACTERIZATION OF RADIATION CROSSLINKING DENSITY OF F-40

In this paper, radiation-induced crosslinking mechanism and characterization of the crosslinking density of F-40 and F-4 by X-ray photoelectron spectroscopy （XPS） have been studied. The dose of gelation of F-40 obtained from XPS is 4.1×10;Gy. It is found that crosslinking density is the largest in the range of certain dose for F-40 and F-4.

A STUDY ON RADIATION CROSSLINKING OF POLYDIMETHYLSILOXANE (PDMS) RUBBER LATEX

Polydimethylsiloxane (PDMS) rubber latex with two sorts of sensitizers, trimethylol propane tri-methacrylate (TMPTMA) and diethylene glycol di-acrylate (DEGDA), was irradiated with γ-rays and electron beams in various conditions. The radiation crosslinking reaction of PDMS occurs in the inner phase of the latex and is relatively isolated from the water phase. Therefore the oxygen and the radicals produced by the radiolysis reaction of water almost have no effect on the crosslinking reaction of polymer. The experimental data correspond with the Charlesby-Pinner relationship in the main. The gelation doses, degree of crosslinking and degradation as well as G values of crosslinking were calculated. From them, the sensitization coefficients were derived to offer a quantitative measurement of the enhancing effect of sensitizer on the radiation crosslinking.

Effects of 1 MeV electron radiation on the AlGaN/GaN high electron mobility transistors

In this study, the effects of 1 MeV electron radiation on the D-mode GaN-based high electron mobility transistors(HEMTs) were investigated after different radiation doses. The changes in electrical properties of the device were obtained, and the related physical mechanisms were analyzed. It indicated that under the radiation dose of 5 × 10^(14) cm^(-2), the channel current cannot be completely pinched off even if the negative gate voltage was lower than the threshold voltage, and the gate leakage current increased significantly. The emission microscopy and scanning electron microscopy were used to determine the damage location. Besides, the radiation dose was adjusted ranging from 5 × 10^(12) to 1 × 10^(14) cm^(-2), and we noticed that the drain-source current increased and the threshold voltage presented slightly negative shift. By calculations, it suggested that the carrier density and electron mobility gradually increased. It provided a reference for the development of device radiation reinforcement technology.

Synergistic effects of 4-nitrophenol degradation using gamma irradiation combined with a advanced oxidation process

The radiation-induced degradation of 4-nitrophenol(4-NP) was performed in combination with a Fenton reagent, H_2O_2, and Ti O_2 nanoparticles to investigate the synergetic effects of radiolytical degradation combined with other advanced oxidation processes. The experimental results indicated that the degradation efficiency of 4-NP was 87.5, 57.4, and 41.0 % at a dose of 20 k Gy when its initial concentration was 100, 200, and 350 mg/L, respectively. Radiation combined with H_2O_2, the Fenton method,and Ti O_2 remarkably increased the degradation efficiency of 4-NP, showing the synergetic effects. Radiation may enhance the biodegradability of 4-NP, suggesting that it has the potential to be used as a pretreatment method in combination with the biological method for the treatment of industrial wastewater containing toxic organic pollutants. Major intermediates during the 4-NP degradation process were identified and a possible degradation pathway was tentatively proposed.

CALCULATION OF MOLECULAR INTERNAL ROTATING STERIC FACTOR OF FLUOROPOLYMERS BY RADIATION CROSSLINKING METHOD

In this paper, the relationship between radiation crosslinking parameter β and the molecular internal rotating steric factor (σ) for fluoropolymers were studied. An expression calculating the molecular internal rotating steric factor of fluoropolymers, σ=1.44+(β-0.206)/1.946, was established. σ value obtained by this method is in agreement with that given in the literature.

THE RADIATION CROSSLINKING OF EPR/SBR BLEND

The radiation crosslinking of EPR/SBR blend has been studied. A relationship between sol fraction and radiation dose for the different weight ratio polymer blends and the method to calculate βb value of EPR/SBR blend system have been established.

RADIATION DEGRADATION OF CHITOSAN IN THE PRESENCE OF H_2O_2

In order to obtain the chitosan oligomers, chitosan was irradiated in the solid state with and without H 2 O 2 as a radiation degradation sensitizer, respectively. At room temperature, the viscosity average-molecular weight (M η ) of chitosan was decreased from 1.6 × 106 to 2.2 × 105 at an absorbed dose of 72 kGy without H2O2, and decreased to 2.7 × 104 at 2 kGy in the presence of an appropriate H2O2 content. In addition, the radiation degradation rate of chitosan containing 38.2wt% H2O2 is 59 times higher than that in the solid state without H2O2. FT-IR analysis suggests that there is no obvious change in the chemical structure of irradiated chitosan with and without H2O2 at a dose below 20 kGy, compared with unirradiated chitosan. On the other hand, the degree of deacetylation (DD) of irradiated chitosan in the studied dose range changed slightly, while DD of irradiated chitosan with H2O2 increased significantly. The XRD pattern indicates that the irradiated chitosan with H2O2 has more perfect crystalline structure than unirradiated chitosan. Therefore, it could be expected that irradiation of chitosan using H2O2 as a sensitizer would be a very effective method to prepare low molecular weight chitosan, because of its feasibility and benignancy to environment.

Radiation Crosslinking of Pol ysulfone-Pol ysiloxane Multiblock Copolymers

In this paper the effects of irradiation on the structures and properties of polysul-fone-polysiloxane multiblock copolymers and its important applied prospects are studied in detail.

Gaseous products generated by radiation degradation of N,N-diethylhydroxylamine aqueous solution

In this paper,gaseous products generated by radiation degradation of N,N-diethylhydroxylamine (DEHA) in aqueous solution are studied.The results show that by 10～1000 kGy irradiation of the solution in DEHA concentration of 0.1～0.5 mol·L^(-1),the gaseous products were mainly hydrogen,methane,ethane and ethene.The volume fraction of hydrogen did not change much with different concentrations of DEHA.The volume fraction of methane and ethane decreased,but that of ethene increased,with increasing DEHA concentration.The volume fraction of hydrogen,methane and ethane increased with the dose.The relationship of the volume fraction of ethene with the dose had something to do with the DEHA concentration.

Spatial Distribution of Radiation Belt Protons Deduced from Solar Cell Degradation of the Arase Satellite

Analysis of solar-cell array panel (SAP) data from the Arase satellite orbiting in the inner magnetosphere showed a clear degradation of solar cells that could be attributed to trapped protons with energies greater than 6 MeV. Proton fluence was determined based on variations in the open-circuit voltage (Voc) of the solar cells, which we compared with that expected based on various distribution models (AP8MAX, AP9 mean and CRRESPRO quiet) of trapped protons. We found a general agreement, confirming the major contribution of trapped protons to the degradation, as well as a slight difference in the fluence expected based on the model calculations. To minimize this difference, we slightly modified the models, and found that concentrating the energetic protons on the magnetic equator provided a better agreement. Our results indicate that >6 MeV protons also has the equatorial concentration as reported for >18 MeV protons from the Van Allen Probes observation, and are interpreted as two components of the trapped protons, i.e., those of solar energetic particle (SEP) origin have an anisotropic pitch-angle distribution and are confined near the magnetic equator.

Gaseous products of aqueous N,N-dimethyl hydroxylamine degraded by radiation

In this work,the 0.1-0.5 mol·L-1 N,N-dimethylhydroxylamine(DMHA) were irradiated to 5-25 kGy,and gaseous products of mainly hydrogen,methane,ethane and n-butane were measured by gas chromatography.The results show that the volume fraction of hydrogen and methane increases with the concentration of DMHA and dose,and the latter does not change markedly at high doses.

EFFECT OF γ-RADIATION ON PROPERTIES OF CHLORO-SULFONATED POLYETHYLENE

The effects of γ-radiation on three chloro-sulfonated polyethylene (CSM) with different chlorine content have been investigated, the effects of γ-radiation on some physical properties of CSM have been discussed. The results showed that three CSM can be easily crosslinked by irradiation, the crosslinking degree related to chlorine content, at the same radiation dose, the more the chlorine content in CSM, the easier the CSM to be crosslinked, unirradiated CSM has good mechanical properties (tensile strength and elongation), the effect of irradiation dose on dielectric properties was insignificant.

Effect of irradiation on temperature performance of dispersioncompensation no-core cascade optical-fiber sensor coated with polydimethylsiloxane film

A temperature measurement device can produce data deviations and can even be damaged in a high-dose radiation environment.To reduce the radiation damage to such a device and improve the temperature measurement accuracy in a radiation environment,a temperature sensor based on optical-fiber sensing technology is proposed.This sensor has a cascade structure composed of a single-mode fiber(SMF),a dispersion-compensation fiber(DCF),a nocore fiber(NCF),and another SMF(SDNS).The DCF and NCF are coated with a polydimethylsiloxane(PDMS)film,which is a heat-sensitive material with high thermal optical and thermal expansion coefficients.In experiments,PDMS was found to produce an irradiation crosslinking effect after irradiation,which improved the temperature sensitivity of the SDNS sensor.The experimental results showed that within a range of 30–100℃,the maximum temperature sensitivity after irradiation was 62.86 pm/℃,and the maximum transmission sensitivity after irradiation was 3.353×10^(-2)dB/℃,which were 1.22 times and 2.267 times the values before irradiation,respectively.In addition,repeated temperature experiments verified that the SDNS sensor coated with the PDMS film had excellent temperature repeatability.Furthermore,it was found that with an increase in the irradiation intensity,the irradiation crosslinking degree of PDMS increased,and the temperature sensitivity of the sensor was improved.The proposed sensor could potentially be applied to temperature measurement in a nuclear-radiation environment.

Proton induced radiation effect of SiC MOSFET under different bias

Radiation effects of silicon carbide metal–oxide–semiconductor field-effect transistors(SiC MOSFETs)induced by 20 MeV proton under drain bias(V_(D)=800 V,V_(G)=0 V),gate bias(V_(D)=0 V,V_(G)=10 V),turn-on bias(V_(D)=0.5 V,V_(G)=4 V)and static bias(V_(D)=0 V,V_(G)=0 V)are investigated.The drain current of SiC MOSFET under turn-on bias increases linearly with the increase of proton fluence during the proton irradiation.When the cumulative proton fluence reaches 2×10^(11)p·cm^(-2),the threshold voltage of SiC MOSFETs with four bias conditions shifts to the left,and the degradation of electrical characteristics of SiC MOSFETs with gate bias is the most serious.In the deep level transient spectrum test,it is found that the defect energy level of SiC MOSFET is mainly the ON2(E_(c)-1.1 eV)defect center,and the defect concentration and defect capture cross section of SiC MOSFET with proton radiation under gate bias increase most.By comparing the degradation of SiC MOSFET under proton cumulative irradiation,equivalent 1 MeV neutron irradiation and gamma irradiation,and combining with the defect change of SiC MOSFET under gamma irradiation and the non-ionizing energy loss induced by equivalent 1 MeV neutron in SiC MOSFET,the degradation of SiC MOSFET induced by proton is mainly caused by ionizing radiation damage.The results of TCAD analysis show that the ionizing radiation damage of SiC MOSFET is affected by the intensity and direction of the electric field in the oxide layer and epitaxial layer.

THE EFFECT OF IRRADIATION ON THE POLYETHERKETONE WITH CARDO GROUP

The effects of irradiation on the polyetherketone with cardo group (PEK-C) were studied. It was found that PEK-C can be crosslinked by irradiation under vacuum, while degradation reaction occurred in PEK-C at room temperature in the presence of air. Moreover. it was also found that Ts value of the crosslinked PEK-C at high temperature is higher than that at room temperature in the case of the same gel content, whose value is about 8℃ higher than that of unirradiated PEK-C. The gelation dose of PEK-C at 300℃ under vacuum is 1.5×10~4 Gy, which is about hundred times smaller than that at room temperature.

EFFECT OF IRRADIATION TEMPERATURE ON GENERAL EQUATION OF SOL FRACTION-DOSE RELATIONSHIP FOR FLUOROPOLYMERS

In this paper, the effect of irradiation temperature on sol fraction-dose relationship of tluoropolymers was studied. It was found that the increasing of irradiation temperature can result in the decreasing of β value of fluoropolymer, which increases the crosslinking probability of fluoropolymer. The relationship between crosslinking parameter β and irradiation temperature (T_i)of fluoropolymer is established as follows:β=2.2×10^(-3) T_g+4×10^(-4)(T_g-T_i)+0.206.values of some tluoropolymers calculated from the above expression are in agreement with the experimental values.

Effect of open ultraviolet germicidal irradiation lamps on functionality of excimer lasers used in cornea surgery

We report on the impact of direct ultraviolet germicidal irradiation（UVGI）on reflective optics,used in the excimer laser system Allegretto Eye-Q.The aim of our work was to confirm our hypothesis based on long-rate observations of obtained anomalies in post-operative results that are attributed to degradation of reflective optics upon ultraviolet radiation.The presence of direct UVGI coupled with humidity in the operating environment caused merging anomalies and unwanted post-operative correction values.Ultraviolet-A radiation caused a similar effect on the reflective cover of the mirrors.

In-situ Enhanced Toughening of Poly（ethylene terephthalate）/elastomer Blends via Gamma-Ray Radiation at Presence of Trimethylolpropane Triacrylate

Gamma-ray radiation has always been a convenient and effective way to modify the inter- facial properties in polymer blends. In this work, a small amount of trimethylolpropane triacrylate （TMPTA） was incorporated into poly（ethylene terephthalate） （PET）/random terpolymer elastomer （ST2000） blends by melt-blending. The existence of TMPTA would induce the crosslinking of PET and ST2000 molecular chains at high temperatures of blend- ing, resulting in the improvement in the impact strength but the loss in the tensile strength. When the PET/ST2000 blends were irradiated by gamma-ray radiation, the integrated me- chanical properties could be enhanced significantly at a high absorbed dose. The irradiated sample at a dose of 100 kGy even couldn＇t be broken under the impact test load, and at the same time, has nearly no loss of tensile strength. Based on the analysis of the impact- fractured surface morphologies of the blends, it can be concluded that gamma-ray radiation at high absorbed dose can further in situ enhance the interfacial adhesion by promoting the crosslinking reactions of TMPTA and polymer chains. As a result, the toughness and strength of PET/ST2000 blend could be dramatically improved. This work provides a facial and practical way to the fabrication of polymer blends with high toughness and strength.