Design of radiation hard phase-locked loop at 2.5 GHz using SOS-CMOS

A radiation hard phase-locked loop （PLL） is designed at 2.5 GHz using silicon on sapphire complementary metal-oxide-semiconductor process. Radiation hardness is achieved through improving circuit design without sacrificing real estate. Stability is guaranteed by a fully self-bias architecture. The lock time of PLL is minimized by maximizing the loop bandwidth. Frequency tuning range of voltage controlled oscillator is significantly enhanced by a novel load configuration. In addition, multiple bias stages, asynchronous frequency divider, and silicon on sapphire process jointly make the proposed PLL more radiation hard. Layout of this PLL is simulated by Cadence Spectre RF under both single event effect and total induced dose effect. Simulation results demonstrate excellent stability, lock time 〈 600 ns, frequency tuning range [1.57 GHz, 3.46 GHz], and jitter 〈 12 ps. Through comparison with PLLs in literatures, the PLL is especially superior in terms of lock time and frequency tuning range performances.

Influence of nitrogen implantation into the buried oxide on the radiation hardness of silicon-on-insulator wafers

In order to improve the total-dose radiation hardness of the buried oxide of separation by implanted oxygen silicon- on-insulator wafers, nitrogen ions were implanted into the buried oxide with a dose of 1016 cm-2, and subsequent annealing was performed at 1100 ℃. The effect of annealing time on the radiation hardness of the nitrogen implanted wafers has been studied by the high frequency capacitance-voltage technique. The results suggest that the improvement of the radiation hardness of the wafers can be achieved through a shorter time annealing after nitrogen implantation. The nitrogen-implanted sample with the shortest annealing time 0.5 h shows the highest tolerance to total-dose radiation. In particular, for the 1.0 and 1.5 h annealing samples, both total dose responses were unusual. After 300-krad（Si） irradiation, both the shifts of capacitance-voltage curve reached a maximum, respectively, and then decreased with increasing total dose. In addition, the wafers were analysed by the Fourier transform infrared spectroscopy technique, and some useful results have been obtained.

Total dose radiation response of modified commercial silicon-on-insulator materials with nitrogen implanted buried oxide

Nitrogen ions of various doses are implanted into the buried oxide （BOX） of commercial silicon-on-insulator （SOI） materials, and subsequent annealings are carried out at various temperatures. The total dose radiation responses of the nitrogen-implanted SOI wafers are characterized by the high frequency capacitance-voltage （C-V） technique after irradi- ation using a Co-60 source. It is found that there exist relatively complex relationships between the radiation hardness of the nitrogen implanted BOX and the nitrogen implantation dose at different irradiation doses. The experimental results also suggest that a lower dose nitrogen implantation and a higher post-implantation annealing temperature are suitable for improving the radiation hardness of SOI wafer. Based on the measured C V data, secondary ion mass spectrometry （SIMS）, and Fourier transform infrared （FTIR） spectroscopy, the total dose responses of the nitrogen-implanted SOI wafers are discussed.

Single event effect hardness for the front-end ASICs in the DAMPE satellite BGO calorimeter

The Dark Matter Particle Explorer （DAMPE） is a Chinese scientific satellite designed for cosmic ray studies with a primary scientific goal of indirect detection of dark matter particles. As a crucial sub-detector, the BGO calorimeter measures the energy spectrum of cosmic rays in the energy range from 5 GeV to 10 TeV. In order to implement high-density front-end electronics （FEE） with the ability to measure 1848 signals from 616 photomultiplier tubes on the strictly constrained satellite platform, two kinds of 32-channel front-end ASICs, VA160 and VATA160, are customized. However, a space mission period of more than 3 years makes single event effects （SEEs） become threats to reliability. In order to evaluate SEE sensitivities of these chips and verify the effectiveness of mitigation methods, a series of laser-induced and heavy ion-induced SEE tests were performed. Benefiting from the single event latch-up （SEL） protection circuit for power supply, the triple module redundancy （TMR） technology for the configuration registers and the optimized sequential design for the data acquisition process, 52 VA160 chips and 32 VATA160 chips have been applied in the flight model of the BGO calorimeter with radiation hardness assurance.