The design of the active region structures,including the modifications of structures of the quantum barrier(QB)and electron blocking layer(EBL),in the deep ultraviolet(DUV)Al Ga N laser diode(LD)is investigated numeri...The design of the active region structures,including the modifications of structures of the quantum barrier(QB)and electron blocking layer(EBL),in the deep ultraviolet(DUV)Al Ga N laser diode(LD)is investigated numerically with the Crosslight software.The analyses focus on electron and hole injection efficiency,electron leakage,hole diffusion,and radiative recombination rate.Compared with the reference QB structure,the step-like QB structure provides high radiative recombination and maximum output power.Subsequently,a comparative study is conducted on the performance characteristics with four different EBLs.For the EBL with different Al mole fraction layers,the higher Al-content Al Ga N EBL layer is located closely to the active region,leading the electron current leakage to lower,the carrier injection efficiency to increase,and the radiative recombination rate to improve.展开更多
In this paper a systematic study is carried out on the angular distribution and polarization of photons emitted following radiative recombination of H-like ions by a non-relativistic dipole approximation. In order to ...In this paper a systematic study is carried out on the angular distribution and polarization of photons emitted following radiative recombination of H-like ions by a non-relativistic dipole approximation. In order to incorporate the screening effect due to inner-shell electrons, a distorted wave approazh is used. The dependences of the calculated angular distribution and polarization on the reduced energy and nuclear charge are fitted by the corresponding empirical formulas respectively.展开更多
A method based upon the weighted total cross section （WTCS） theory is proposed to calculate the photo-ionisation cross sections and the radiative recombination rate coefficients between the fundamental level of CO a...A method based upon the weighted total cross section （WTCS） theory is proposed to calculate the photo-ionisation cross sections and the radiative recombination rate coefficients between the fundamental level of CO and the main electronic states of its corresponding ion. Total photo-ionisation cross sections and radiative recombination rate coefficients are determined from the calculation of elementary vibrational photo-ionisation cross sections. Transitions be- tween CO＋（X, A and B） and CO（X） are considered. Total photo-ionisation cross sections and recombination coefficients are computed in the temperature interval 500-15000 K.展开更多
Recombination of Ar^(14+), Ar^(15+), Ca^(16+), and Ni^(19+) ions with electrons has been investigated at low energy range based on the merged-beam method at the main cooler storage ring CSRm in the Institute of Modern...Recombination of Ar^(14+), Ar^(15+), Ca^(16+), and Ni^(19+) ions with electrons has been investigated at low energy range based on the merged-beam method at the main cooler storage ring CSRm in the Institute of Modern Physics, Lanzhou,China. For each ion, the absolute recombination rate coefficients have been measured with electron–ion collision energies from 0 meV to 1000 meV which include the radiative recombination(RR) and also dielectronic recombination(DR)processes. In order to interpret the measured results, RR cross sections were obtained from a modified version of the semiclassical Bethe and Salpeter formula for hydrogenic ions. DR cross sections were calculated by a relativistic configuration interaction method using the flexible atomic code(FAC) and AUTOSTRUCTURE code in this energy range. The calculated RR + DR rate coefficients show a good agreement with the measured value at the collision energy above 100 meV.However, large discrepancies have been found at low energy range especially below 10 meV, and the experimental results show a strong enhancement relative to the theoretical RR rate coefficients. For the electron–ion collision energy below 1 meV, it was found that the experimentally observed recombination rates are higher than the theoretically predicted and fitted rates by a factor of 1.5 to 3.9. The strong dependence of RR rate coefficient enhancement on the charge state of the ions has been found with the scaling rule of q^(3.0), reproducing the low-energy recombination enhancement effects found in other previous experiments.展开更多
The dynamics of produced excited carriers under the irradiation of Ge crystal is investigated theoretically by using femtosecond laser pulse.A two-temperature model combined with the Drude model is also used to study ...The dynamics of produced excited carriers under the irradiation of Ge crystal is investigated theoretically by using femtosecond laser pulse.A two-temperature model combined with the Drude model is also used to study the nonequilibrium carrier density,carrier and lattice temperatures,and optical properties of the crystal.The properties of the surface plasmon wave when excited are also studied.The influences of non-radiation and radiative recombination process on the photoexcitation of the semiconductor during pulse and the relaxation after the pulse are described in detail.The results show that the effects of Auger recombination on the nonequilibrium carrier density and optical properties of the crystal and the properties of the surface plasmon polariton are great,whereas the effect of radiative recombination is extremely small.展开更多
This paper analyses the effect of configuration complex on dielectronic recombination （DR） process in highly ionized plasmas （Xe^26＋, Dy^38＋, W^46＋） by using the multiconfiguration relativistic Hartree-Fock met...This paper analyses the effect of configuration complex on dielectronic recombination （DR） process in highly ionized plasmas （Xe^26＋, Dy^38＋, W^46＋） by using the multiconfiguration relativistic Hartree-Fock method. Resonant and nonresonant radiative stabilizing transitions and decays to autoionizing levels followed by radiative cascades are included. Collisional transitions following electron capture are neglected. The remarkable difference between the isoelectronic trend of the rate coefficients for DR through 3d^94l4l′ and through 3d^94l5l′ is emphasized. The trend of DR through 3d^94l4l′ shows irregularities at relatively low temperature due to the progressive closing of DR channels as atomic number Z increases.展开更多
ABSTRACT Embedding submicrocavities is an effective approach to improve the light out-coupling efficiency(LOCE)for planar perovskite light-emitting diodes(PeLEDs).In this work,we employ phenethylammonium iodide(PEAI)t...ABSTRACT Embedding submicrocavities is an effective approach to improve the light out-coupling efficiency(LOCE)for planar perovskite light-emitting diodes(PeLEDs).In this work,we employ phenethylammonium iodide(PEAI)to trigger the Ostwald ripening for the downward recrystallization of perovskite,resulting in spontaneous formation of buried submicrocavities as light output coupler.The simulation suggests the buried submicrocavities can improve the LOCE from 26.8 to 36.2%for near-infrared light.Therefore,PeLED yields peak external quantum efficiency(EQE)increasing from 17.3%at current density of 114 mA cm^(−2)to 25.5%at current density of 109 mA cm^(−2)and a radiance increasing from 109 to 487 W sr^(−1)m^(−2)with low rolling-off.The turn-on voltage decreased from 1.25 to 1.15 V at 0.1 W sr^(−1)m^(−2).Besides,downward recrystallization process slightly reduces the trap density from 8.90×10^(15)to 7.27×10^(15)cm^(−3).This work provides a self-assembly method to integrate buried output coupler for boosting the performance of PeLEDs.展开更多
基金Project supported by the Special Project for Inter-government Collaboration of State Key Research and Development Program,China(Grant No.2016YFE0118400)the Key Project of Science and Technology of Henan Province,China(Grant No.172102410062)the National Natural Science Foundation of China and Henan Provincial Joint Fund Key Project(Grant No.U1604263)
文摘The design of the active region structures,including the modifications of structures of the quantum barrier(QB)and electron blocking layer(EBL),in the deep ultraviolet(DUV)Al Ga N laser diode(LD)is investigated numerically with the Crosslight software.The analyses focus on electron and hole injection efficiency,electron leakage,hole diffusion,and radiative recombination rate.Compared with the reference QB structure,the step-like QB structure provides high radiative recombination and maximum output power.Subsequently,a comparative study is conducted on the performance characteristics with four different EBLs.For the EBL with different Al mole fraction layers,the higher Al-content Al Ga N EBL layer is located closely to the active region,leading the electron current leakage to lower,the carrier injection efficiency to increase,and the radiative recombination rate to improve.
基金Project supported by the National Science Foundation of China （Grant Nos 10574029 and 10434050）, the Chinese Association of Atomic and Molecular Data and National High-Tech ICF Committee in China.
文摘In this paper a systematic study is carried out on the angular distribution and polarization of photons emitted following radiative recombination of H-like ions by a non-relativistic dipole approximation. In order to incorporate the screening effect due to inner-shell electrons, a distorted wave approazh is used. The dependences of the calculated angular distribution and polarization on the reduced energy and nuclear charge are fitted by the corresponding empirical formulas respectively.
基金the "Comite Mixté Franco-Tunisien pour la Coopération Universitaire(Partenariat Hubert Curien,Utique,Tunisie)"for its financial support in the achievement of this work
文摘A method based upon the weighted total cross section （WTCS） theory is proposed to calculate the photo-ionisation cross sections and the radiative recombination rate coefficients between the fundamental level of CO and the main electronic states of its corresponding ion. Total photo-ionisation cross sections and radiative recombination rate coefficients are determined from the calculation of elementary vibrational photo-ionisation cross sections. Transitions be- tween CO＋（X, A and B） and CO（X） are considered. Total photo-ionisation cross sections and recombination coefficients are computed in the temperature interval 500-15000 K.
基金Project supported by the National Key Research and Development Program of China(Grant No.2017YFA0402300)the National Natural Science Foundation of China(Grant Nos.U1932207,11904371,and U1732133)。
文摘Recombination of Ar^(14+), Ar^(15+), Ca^(16+), and Ni^(19+) ions with electrons has been investigated at low energy range based on the merged-beam method at the main cooler storage ring CSRm in the Institute of Modern Physics, Lanzhou,China. For each ion, the absolute recombination rate coefficients have been measured with electron–ion collision energies from 0 meV to 1000 meV which include the radiative recombination(RR) and also dielectronic recombination(DR)processes. In order to interpret the measured results, RR cross sections were obtained from a modified version of the semiclassical Bethe and Salpeter formula for hydrogenic ions. DR cross sections were calculated by a relativistic configuration interaction method using the flexible atomic code(FAC) and AUTOSTRUCTURE code in this energy range. The calculated RR + DR rate coefficients show a good agreement with the measured value at the collision energy above 100 meV.However, large discrepancies have been found at low energy range especially below 10 meV, and the experimental results show a strong enhancement relative to the theoretical RR rate coefficients. For the electron–ion collision energy below 1 meV, it was found that the experimentally observed recombination rates are higher than the theoretically predicted and fitted rates by a factor of 1.5 to 3.9. The strong dependence of RR rate coefficient enhancement on the charge state of the ions has been found with the scaling rule of q^(3.0), reproducing the low-energy recombination enhancement effects found in other previous experiments.
基金Project supported by the Young Scientists Fund of the National Natural Science Foundation of China(Grant No.11804227).
文摘The dynamics of produced excited carriers under the irradiation of Ge crystal is investigated theoretically by using femtosecond laser pulse.A two-temperature model combined with the Drude model is also used to study the nonequilibrium carrier density,carrier and lattice temperatures,and optical properties of the crystal.The properties of the surface plasmon wave when excited are also studied.The influences of non-radiation and radiative recombination process on the photoexcitation of the semiconductor during pulse and the relaxation after the pulse are described in detail.The results show that the effects of Auger recombination on the nonequilibrium carrier density and optical properties of the crystal and the properties of the surface plasmon polariton are great,whereas the effect of radiative recombination is extremely small.
基金supported by the National Natural Science Foundation of China (Grant No 60054402)
文摘This paper analyses the effect of configuration complex on dielectronic recombination （DR） process in highly ionized plasmas （Xe^26＋, Dy^38＋, W^46＋） by using the multiconfiguration relativistic Hartree-Fock method. Resonant and nonresonant radiative stabilizing transitions and decays to autoionizing levels followed by radiative cascades are included. Collisional transitions following electron capture are neglected. The remarkable difference between the isoelectronic trend of the rate coefficients for DR through 3d^94l4l′ and through 3d^94l5l′ is emphasized. The trend of DR through 3d^94l4l′ shows irregularities at relatively low temperature due to the progressive closing of DR channels as atomic number Z increases.
基金supported by Startup Funds from the Central Organization Department and the South China University of Technology(SCUT),as well as funds from the national natural science foundation of China(Grant No:U2001217)the Guangdong Science and Technology Program(2020B121201003,2019ZT08L075,2019QN01L118,2021A1515012545)the Fundamental Research Fund for the Central Universities,SCUT(2020ZYGXZR095).
文摘ABSTRACT Embedding submicrocavities is an effective approach to improve the light out-coupling efficiency(LOCE)for planar perovskite light-emitting diodes(PeLEDs).In this work,we employ phenethylammonium iodide(PEAI)to trigger the Ostwald ripening for the downward recrystallization of perovskite,resulting in spontaneous formation of buried submicrocavities as light output coupler.The simulation suggests the buried submicrocavities can improve the LOCE from 26.8 to 36.2%for near-infrared light.Therefore,PeLED yields peak external quantum efficiency(EQE)increasing from 17.3%at current density of 114 mA cm^(−2)to 25.5%at current density of 109 mA cm^(−2)and a radiance increasing from 109 to 487 W sr^(−1)m^(−2)with low rolling-off.The turn-on voltage decreased from 1.25 to 1.15 V at 0.1 W sr^(−1)m^(−2).Besides,downward recrystallization process slightly reduces the trap density from 8.90×10^(15)to 7.27×10^(15)cm^(−3).This work provides a self-assembly method to integrate buried output coupler for boosting the performance of PeLEDs.
