Modeling random telegraph signal noise in CMOS image sensor under low light based on binomial distribution

The random telegraph signal noise in the pixel source follower MOSFET is the principle component of the noise in the CMOS image sensor under low light. In this paper, the physical and statistical model of the random telegraph signal noise in the pixel source follower based on the binomial distribution is set up. The number of electrons captured or released by the oxide traps in the unit time is described as the random variables which obey the binomial distribution. As a result,the output states and the corresponding probabilities of the first and the second samples of the correlated double sampling circuit are acquired. The standard deviation of the output states after the correlated double sampling circuit can be obtained accordingly. In the simulation section, one hundred thousand samples of the source follower MOSFET have been simulated,and the simulation results show that the proposed model has the similar statistical characteristics with the existing models under the effect of the channel length and the density of the oxide trap. Moreover, the noise histogram of the proposed model has been evaluated at different environmental temperatures.

Statistical Modeling of Gate Capacitance Variations Induced by Random Dopants in Nanometer MOSFETs Reserving Correlations

We consider intrinsic gate capacitance variations due to random dopants in the nanometer metal oxide semi- conductor field effect transistor （MOSFET） channel. The variations of total gate capacitance and gate transcapacitances are investigated and the strong correlations between the trans-capacitance variations are discovered. A simple statistical model is proposed for accurately capturing total gate capacitance variability based on the correlations. The model fits very well with the Monte Carlo simulations and the average errors are -0.033% for n-type metal-oxide semiconductor and -0.012% for p-type metal-oxide semiconductor, respectively. Our simulation studies also indicate that, owing to these correlations, the total gate capacitance variability will not dominate in gate capacitance variations.

Statistical second-order two-scale analysis and computation for heat conduction problem with radiation boundary condition in porous materials

This paper discusses a statistical second-order two-scale（SSOTS） analysis and computation for a heat conduction problem with a radiation boundary condition in random porous materials.Firstly,the microscopic configuration for the structure with random distribution is briefly characterized.Secondly,the SSOTS formulae for computing the heat transfer problem are derived successively by means of the construction way for each cell.Then,the statistical prediction algorithm based on the proposed two-scale model is described in detail.Finally,some numerical experiments are proposed,which show that the SSOTS method developed in this paper is effective for predicting the heat transfer performance of porous materials and demonstrating its significant applications in actual engineering computation.

Almost sure central limit theorems for random functions

Let {Xn,-∞< n <∞} be a sequence of independent identically distributed random variables with EX1 = 0, EX12 = 1 and let Sn =∑k=1∞Xk, and Tn = Tn(X1,…,Xn) be a random function such that Tn = ASn + Rn, where supn E|Rn| <∞and Rn = o(n^(1/2)) a.s., or Rn = O(n1/2-2γ) a.s., 0 <γ< 1/8. In this paper, we prove the almost sure central limit theorem (ASCLT) and the function-typed almost sure central limit theorem (FASCLT) for the random function Tn. As a consequence, it can be shown that ASCLT and FASCLT also hold for U-statistics, Von-Mises statistics, linear processes, moving average processes, error variance estimates in linear models, power sums, product-limit estimators of a continuous distribution, product-limit estimators of a quantile function, etc.