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Photoluminescence Properties of Porous Silicon Based on FZ(H) Si Wafer 被引量:2
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作者 Yuejiao He, Huaixiang Li, Chenghua Guo, Guirong Liu, Yansheng Chen, Shuzhen Duan (Institute of Semiconductors, Shandong Normal University, Jinan 250014, China Metallurgy School, University of Science and Technology Beijing, Beijing 100083, China) 《Rare Metals》 SCIE EI CAS CSCD 2001年第1期38-42,57,共6页
The photoluminescence (PL) properties of porous silicon (PS) have been studied based on n-type single-crystal (111) silicon wafers (80-90 Omega .cm in the resistivity). The porous silicon layers (PSL) were created by ... The photoluminescence (PL) properties of porous silicon (PS) have been studied based on n-type single-crystal (111) silicon wafers (80-90 Omega .cm in the resistivity). The porous silicon layers (PSL) were created by anodizing the wafers with a denuded zone of 20-40 mum formed by neutron transmutation doping (NTD) and thermal treatment at 940 degreesC for 4 h and then 700 degreesC for 2 h, two-step heating of the floating-zone silicon (FZ Si) grown in a hydrogen (H,) ambience. By surface modification with stannic chloride or amine immersion and rapid thermal oxidation (RTO), the PL peak position from the PS can be qualitatively controlled factitiously. The as-prepared PS shows an orange-yellow luminescence, while the modified samples emit red, green and blue luminescence. Mechanisms for the different colors of the PL are discussed. Fourier transform infrared (FTIR) is carried out to analyze the differences in the structural configuration of the PS samples. 展开更多
关键词 porous silicon PHOTOLUMINESCENCE surface modification rapid thermal oxidation
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