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Characteristics of coal re-oxidation based on microstructural and spectral observation 被引量:22
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作者 Liang Yuntao Tian Fuchao +1 位作者 Luo Haizhu Tang Hui 《International Journal of Mining Science and Technology》 SCIE EI CSCD 2015年第5期749-754,共6页
In order to investigate the characteristics of re-oxidation of residual coal in goafs in close coal seam mining,scanning electron microscope and infrared spectrometer are used to study the changes of coal microstructu... In order to investigate the characteristics of re-oxidation of residual coal in goafs in close coal seam mining,scanning electron microscope and infrared spectrometer are used to study the changes of coal microstructure and chemical reaction of functional groups of eight coal samples at different ranks.Result shows that after initial oxidation,the surface morphology of pore are different,and the porosity of coal is increased and the oxygen adsorption capacity of coal is improved.The change of coal molecular structure and presence of a large amount of active oxygen-containing functional groups lead to increasing tendency of coal to further oxidation.In addition,the higher lever of the initial oxidation is,the easier the re-oxidation occurs. 展开更多
关键词 Spontaneous combustion of coal re-oxidation Oxidation characteristics Microstructure Infrared spectrum
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Effect of re-oxidation annealing process on the SiO_2/SiC interface characteristics 被引量:1
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作者 闫宏丽 贾仁需 +2 位作者 汤晓燕 宋庆文 张玉明 《Journal of Semiconductors》 EI CAS CSCD 2014年第6期128-131,共4页
The effect of the different re-oxidation annealing (ROA) processes on the SiO2/SiC interface charac- teristics has been investigated. With different annealing processes, the flat band voltage, effective dielectric c... The effect of the different re-oxidation annealing (ROA) processes on the SiO2/SiC interface charac- teristics has been investigated. With different annealing processes, the flat band voltage, effective dielectric charge density and interface trap density are obtained from the capacitance-voltage curves. It is found that the lowest interface trap density is obtained by the wet-oxidation annealing process at 1050 ℃ for 30 min, while a large num- ber of effective dielectric charges are generated. The components at the SiO2/SiC interface are analyzed by X-ray photoelectron spectroscopy (XPS) testing. It is found that the effective dielectric charges are generated due to the existence of the C and H atoms in the wet-oxidation annealing process. 展开更多
关键词 SiO2/SiC re-oxidation annealing effective dielectric charge interface trap
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