Cadmium selenide(CdSe)belongs to the binary II-VI group semiconductor with a direct bandgap of~1.7 eV.The suitable bandgap,high stability,and low manufacturing cost make CdSe an extraordinary candidate as the top cell...Cadmium selenide(CdSe)belongs to the binary II-VI group semiconductor with a direct bandgap of~1.7 eV.The suitable bandgap,high stability,and low manufacturing cost make CdSe an extraordinary candidate as the top cell material in silicon-based tandem solar cells.However,only a few studies have focused on CdSe thin-film solar cells in the past decades.With the advantages of a high deposition rate(~2µm/min)and high uniformity,rapid thermal evaporation(RTE)was used to maximize the use efficiency of CdSe source material.A stable and pure hexagonal phase CdSe thin film with a large grain size was achieved.The CdSe film demonstrated a 1.72 eV bandgap,narrow photoluminescence peak,and fast photoresponse.With the optimal device structure and film thickness,we finally achieved a preliminary efficiency of 1.88%for CdSe thin-film solar cells,suggesting the applicability of CdSe thin-film solar cells.展开更多
基金the National NaturalScience Foundation of China (Grant Nos. 61725401, 61904058,and 62050039)the National Key R&D Program of China (No.2016YFA0204000)+2 种基金the Innovation Fund of WNLO, National PostdoctoralProgram for Innovative Talent (No. BX20190127)the Graduates’ InnovationFund of Huazhong University of Science and Technology (No.2020yjsCXCY003)China Postdoctoral Science Foundation Project(Nos. 2019M662623 and 2020M680101).
文摘Cadmium selenide(CdSe)belongs to the binary II-VI group semiconductor with a direct bandgap of~1.7 eV.The suitable bandgap,high stability,and low manufacturing cost make CdSe an extraordinary candidate as the top cell material in silicon-based tandem solar cells.However,only a few studies have focused on CdSe thin-film solar cells in the past decades.With the advantages of a high deposition rate(~2µm/min)and high uniformity,rapid thermal evaporation(RTE)was used to maximize the use efficiency of CdSe source material.A stable and pure hexagonal phase CdSe thin film with a large grain size was achieved.The CdSe film demonstrated a 1.72 eV bandgap,narrow photoluminescence peak,and fast photoresponse.With the optimal device structure and film thickness,we finally achieved a preliminary efficiency of 1.88%for CdSe thin-film solar cells,suggesting the applicability of CdSe thin-film solar cells.
