This paper presents a new dual V_t 8 T SRAM cell having single bit-line read and write, in addition to Write Assist and Read Isolation（WARI）. Also a faster write back scheme is proposed for the half selected cells. ...This paper presents a new dual V_t 8 T SRAM cell having single bit-line read and write, in addition to Write Assist and Read Isolation（WARI）. Also a faster write back scheme is proposed for the half selected cells. A high V_t device is used for interrupting the supply to one of the inverters for weakening the feedback loop for assisted write. The proposed cell provides an improved read static noise margin（RSNM） due to the bit-line isolation during the read. Static noise margins for data read（RSNM）, write（WSNM）, read delay, write delay, data retention voltage（DRV）, leakage and average powers have been calculated. The proposed cell was found to operate properly at a supply voltage as small as 0.41 V. A new write back scheme has been suggested for half-selected cells,which uses a single NMOS access device and provides reduced delay, pulse timing hardware requirements and power consumption. The proposed new WARI 8 T cell shows better performance in terms of easier write, improved read noise margin, reduced leakage power, and less delay as compared to the existing schemes that have been available so far. It was also observed that with proper adjustment of the cell ratio the supply voltage can further be reduced to 0.2 V.展开更多
Molecular Pathogens(ISSN 1925-1998)is an open access and peer reviewed online journal published by Bio Publisher.The journal is committed to publishing and disseminating all the latest and outstanding research article...Molecular Pathogens(ISSN 1925-1998)is an open access and peer reviewed online journal published by Bio Publisher.The journal is committed to publishing and disseminating all the latest and outstanding research articles,letters and reviews in all areas of molecular pathogens.The range of topics including isolation and identification of emerging pathogens viruses,pathogen-host interactions,genetics and evolution,genomics and展开更多
Triticeae Genomics and Genetics(ISSN 1925-203X)is committed to publishing and disseminating significant original achievements in the related research fields of Triticeae genomics and Triticeae genetics.All papers chos...Triticeae Genomics and Genetics(ISSN 1925-203X)is committed to publishing and disseminating significant original achievements in the related research fields of Triticeae genomics and Triticeae genetics.All papers chosen for publication should be innovative research work in the field of Triticeae genomics and Triticeae genetics,including classical genetics analysis,structural and functional analysis of Triticeae genome,isolation展开更多
Triticeae Genomics and Genetics(ISSN 1925-203X)is committed to publishing and disseminating significant original achievements in the related research fields of Triticeae genomics and Triticeae genetics.All papers chos...Triticeae Genomics and Genetics(ISSN 1925-203X)is committed to publishing and disseminating significant original achievements in the related research fields of Triticeae genomics and Triticeae genetics.All papers chosen for publication should be innovative research work in the field of Triticeae genomics and Triticeae genetics,including classical genetics analysis,structural and functional analysis of Triticeae genome,isolation展开更多
文摘This paper presents a new dual V_t 8 T SRAM cell having single bit-line read and write, in addition to Write Assist and Read Isolation（WARI）. Also a faster write back scheme is proposed for the half selected cells. A high V_t device is used for interrupting the supply to one of the inverters for weakening the feedback loop for assisted write. The proposed cell provides an improved read static noise margin（RSNM） due to the bit-line isolation during the read. Static noise margins for data read（RSNM）, write（WSNM）, read delay, write delay, data retention voltage（DRV）, leakage and average powers have been calculated. The proposed cell was found to operate properly at a supply voltage as small as 0.41 V. A new write back scheme has been suggested for half-selected cells,which uses a single NMOS access device and provides reduced delay, pulse timing hardware requirements and power consumption. The proposed new WARI 8 T cell shows better performance in terms of easier write, improved read noise margin, reduced leakage power, and less delay as compared to the existing schemes that have been available so far. It was also observed that with proper adjustment of the cell ratio the supply voltage can further be reduced to 0.2 V.
文摘Molecular Pathogens(ISSN 1925-1998)is an open access and peer reviewed online journal published by Bio Publisher.The journal is committed to publishing and disseminating all the latest and outstanding research articles,letters and reviews in all areas of molecular pathogens.The range of topics including isolation and identification of emerging pathogens viruses,pathogen-host interactions,genetics and evolution,genomics and
文摘Triticeae Genomics and Genetics(ISSN 1925-203X)is committed to publishing and disseminating significant original achievements in the related research fields of Triticeae genomics and Triticeae genetics.All papers chosen for publication should be innovative research work in the field of Triticeae genomics and Triticeae genetics,including classical genetics analysis,structural and functional analysis of Triticeae genome,isolation
文摘Triticeae Genomics and Genetics(ISSN 1925-203X)is committed to publishing and disseminating significant original achievements in the related research fields of Triticeae genomics and Triticeae genetics.All papers chosen for publication should be innovative research work in the field of Triticeae genomics and Triticeae genetics,including classical genetics analysis,structural and functional analysis of Triticeae genome,isolation
