Based on an avalanche photodiode（ APD） detecting array working in Geiger mode（ GM-APD）, a high-performance infrared sensor readout integrated circuit（ ROIC） used for infrared 3D（ three-dimensional） imaging is ...Based on an avalanche photodiode（ APD） detecting array working in Geiger mode（ GM-APD）, a high-performance infrared sensor readout integrated circuit（ ROIC） used for infrared 3D（ three-dimensional） imaging is proposed. The system mainly consists of three functional modules, including active quenching circuit（ AQC）, time-to-digital converter（ TDC） circuit and other timing controller circuit. Each AQC and TDC circuit together constitutes the pixel circuit. Under the cooperation with other modules, the current signal generated by the GM-APD sensor is detected by the AQC, and the photon time-of-flight（ TOF） is measured and converted to a digital signal output to achieve a better noise suppression and a higher detection sensitivity by the TDC. The ROIC circuit is fabricated by the CSMC 0. 5 μm standard CMOS technology. The array size is 8 × 8, and the center distance of two adjacent cells is 100μm. The measurement results of the chip showthat the performance of the circuit is good, and the chip can achieve 1 ns time resolution with a 250 MHz reference clock, and the circuit can be used in the array structure of the infrared detection system or focal plane array（ FPA）.展开更多
为了解决软击穿导致的压控磁各向异性磁隧道结(voltage-controlled magnetic anisotropy magnetic tunnel junction,VCMA-MTJ)及其读电路性能下降的问题,在对VCMA-MTJ软击穿机理深入分析的基础上,修正了VCMA-MTJ的电学模型,设计了一种...为了解决软击穿导致的压控磁各向异性磁隧道结(voltage-controlled magnetic anisotropy magnetic tunnel junction,VCMA-MTJ)及其读电路性能下降的问题,在对VCMA-MTJ软击穿机理深入分析的基础上,修正了VCMA-MTJ的电学模型,设计了一种具有固定参考电阻的VCMA-MTJ读电路和一种具有参考电阻调控单元的VCMA-MTJ读电路,研究了软击穿对VCMA-MTJ电阻R_(t)、隧穿磁阻比率M、软击穿时间T_(s)以及VCMA-MTJ读电路读错误率的影响。结果表明:软击穿的出现会导致R_(t)和M均随应力时间t的增加而降低,T_(s)随氧化层厚度t_(ox)的增大而缓慢增加,却随脉冲电压V_(b)的增大而迅速减少,与反平行态相比,平行态的T_(s)更短且M降低50%所需时间更少;具有固定参考电阻的VCMA-MTJ读电路可有效避免读“0”错误率的产生,但读“1”错误率却随t的增加而上升,而具有参考电阻调控单元的VCMA-MTJ读电路可在保持读“0”正确率的同时,对读“1”错误率改善达54%,在一定程度上削弱了软击穿对VCMA-MTJ读电路的影响。展开更多
Nanocrossbar is a potential memory architecture to integrate memristor to achieve large scale and high density mem- ory. However, based on the currently widely-adopted parallel reading scheme, scalability of the nanoc...Nanocrossbar is a potential memory architecture to integrate memristor to achieve large scale and high density mem- ory. However, based on the currently widely-adopted parallel reading scheme, scalability of the nanocrossbar memory is limited, since the overhead of the reading circuits is in proportion with the size of the nanocrossbar component. In this paper, a multiplexed reading scheme is adopted as the foundation of the discussion. Through HSPICE simulation, we reanalyze scalability of the nanocrossbar memristor memory by investigating the impact of various circuit parameters on the output voltage swing as the memory scales to larger size. We find that multiplexed reading maintains sufficient noise margin in large size nanocrossbar memristor memory. In order to improve the scalability of the memory, memristors with nonlinear I-V characteristics and high LRS （low resistive state） resistance should be adopted.展开更多
基金The Natural Science Foundation of Jiangsu Province(No.BK2012559)Qing Lan Project of Jiangsu Province
文摘Based on an avalanche photodiode（ APD） detecting array working in Geiger mode（ GM-APD）, a high-performance infrared sensor readout integrated circuit（ ROIC） used for infrared 3D（ three-dimensional） imaging is proposed. The system mainly consists of three functional modules, including active quenching circuit（ AQC）, time-to-digital converter（ TDC） circuit and other timing controller circuit. Each AQC and TDC circuit together constitutes the pixel circuit. Under the cooperation with other modules, the current signal generated by the GM-APD sensor is detected by the AQC, and the photon time-of-flight（ TOF） is measured and converted to a digital signal output to achieve a better noise suppression and a higher detection sensitivity by the TDC. The ROIC circuit is fabricated by the CSMC 0. 5 μm standard CMOS technology. The array size is 8 × 8, and the center distance of two adjacent cells is 100μm. The measurement results of the chip showthat the performance of the circuit is good, and the chip can achieve 1 ns time resolution with a 250 MHz reference clock, and the circuit can be used in the array structure of the infrared detection system or focal plane array（ FPA）.
文摘为了解决软击穿导致的压控磁各向异性磁隧道结(voltage-controlled magnetic anisotropy magnetic tunnel junction,VCMA-MTJ)及其读电路性能下降的问题,在对VCMA-MTJ软击穿机理深入分析的基础上,修正了VCMA-MTJ的电学模型,设计了一种具有固定参考电阻的VCMA-MTJ读电路和一种具有参考电阻调控单元的VCMA-MTJ读电路,研究了软击穿对VCMA-MTJ电阻R_(t)、隧穿磁阻比率M、软击穿时间T_(s)以及VCMA-MTJ读电路读错误率的影响。结果表明:软击穿的出现会导致R_(t)和M均随应力时间t的增加而降低,T_(s)随氧化层厚度t_(ox)的增大而缓慢增加,却随脉冲电压V_(b)的增大而迅速减少,与反平行态相比,平行态的T_(s)更短且M降低50%所需时间更少;具有固定参考电阻的VCMA-MTJ读电路可有效避免读“0”错误率的产生,但读“1”错误率却随t的增加而上升,而具有参考电阻调控单元的VCMA-MTJ读电路可在保持读“0”正确率的同时,对读“1”错误率改善达54%,在一定程度上削弱了软击穿对VCMA-MTJ读电路的影响。
基金Project supported by the National Natural Science Foundation of China (Grant No.61003082)
文摘Nanocrossbar is a potential memory architecture to integrate memristor to achieve large scale and high density mem- ory. However, based on the currently widely-adopted parallel reading scheme, scalability of the nanocrossbar memory is limited, since the overhead of the reading circuits is in proportion with the size of the nanocrossbar component. In this paper, a multiplexed reading scheme is adopted as the foundation of the discussion. Through HSPICE simulation, we reanalyze scalability of the nanocrossbar memristor memory by investigating the impact of various circuit parameters on the output voltage swing as the memory scales to larger size. We find that multiplexed reading maintains sufficient noise margin in large size nanocrossbar memristor memory. In order to improve the scalability of the memory, memristors with nonlinear I-V characteristics and high LRS （low resistive state） resistance should be adopted.
