We fabricated a set of symmetric gate-recess devices with gate length of 70 nm.We kept the source-to-drain spacing(L_(SD))unchanged,and obtained a group of devices with gate-recess length(L_(recess))from 0.4µm to...We fabricated a set of symmetric gate-recess devices with gate length of 70 nm.We kept the source-to-drain spacing(L_(SD))unchanged,and obtained a group of devices with gate-recess length(L_(recess))from 0.4µm to 0.8µm through process improvement.In order to suppress the influence of the kink effect,we have done SiN_(X) passivation treatment.The maximum saturation current density(ID_(max))and maximum transconductance(g_(m,max))increase as L_(recess) decreases to 0.4µm.At this time,the device shows ID_(max)=749.6 mA/mm at V_(GS)=0.2 V,V_(DS)=1.5 V,and g_(m,max)=1111 mS/mm at V_(GS)=−0.35 V,V_(DS)=1.5 V.Meanwhile,as L_(recess) increases,it causes parasitic capacitance C_(gd) and g_(d) to decrease,making f_(max) drastically increases.When L_(recess)=0.8µm,the device shows f_(T)=188 GHz and f_(max)=1112 GHz.展开更多
An 88 nm gate-length In0.53Ga0.47As/In0.52Alo.48As InP-based high electron mobility transistor （HEMT） was successfully fabricated with a gate width of 2× 50 μm and source-drain space of 2.4μm. The T-gate was ...An 88 nm gate-length In0.53Ga0.47As/In0.52Alo.48As InP-based high electron mobility transistor （HEMT） was successfully fabricated with a gate width of 2× 50 μm and source-drain space of 2.4μm. The T-gate was defined by electron beam lithography in a trilayer of PMMA/A1/UVIII. The exposure dose and the development time were optimized, and followed by an appropriate residual resist removal process. These devices also demonstrated excellent DC and RF characteristics： the extrinsic maximum transconductance, the full channel cur- rent, the threshold voltage, the current gain cutoff frequency and the maximum oscillation frequency of the HEMTs were 765 mS/mm, 591 mA/mm, -0.5 V, 150 GHz and 201 GHz, respectively. The HEMTs are promising for use in millimeter-wave integrated circuits.展开更多
基金the National Natural Science Foundation of China(Grant No.61434006).
文摘We fabricated a set of symmetric gate-recess devices with gate length of 70 nm.We kept the source-to-drain spacing(L_(SD))unchanged,and obtained a group of devices with gate-recess length(L_(recess))from 0.4µm to 0.8µm through process improvement.In order to suppress the influence of the kink effect,we have done SiN_(X) passivation treatment.The maximum saturation current density(ID_(max))and maximum transconductance(g_(m,max))increase as L_(recess) decreases to 0.4µm.At this time,the device shows ID_(max)=749.6 mA/mm at V_(GS)=0.2 V,V_(DS)=1.5 V,and g_(m,max)=1111 mS/mm at V_(GS)=−0.35 V,V_(DS)=1.5 V.Meanwhile,as L_(recess) increases,it causes parasitic capacitance C_(gd) and g_(d) to decrease,making f_(max) drastically increases.When L_(recess)=0.8µm,the device shows f_(T)=188 GHz and f_(max)=1112 GHz.
文摘An 88 nm gate-length In0.53Ga0.47As/In0.52Alo.48As InP-based high electron mobility transistor （HEMT） was successfully fabricated with a gate width of 2× 50 μm and source-drain space of 2.4μm. The T-gate was defined by electron beam lithography in a trilayer of PMMA/A1/UVIII. The exposure dose and the development time were optimized, and followed by an appropriate residual resist removal process. These devices also demonstrated excellent DC and RF characteristics： the extrinsic maximum transconductance, the full channel cur- rent, the threshold voltage, the current gain cutoff frequency and the maximum oscillation frequency of the HEMTs were 765 mS/mm, 591 mA/mm, -0.5 V, 150 GHz and 201 GHz, respectively. The HEMTs are promising for use in millimeter-wave integrated circuits.
