In this paper, we prove a common fixed point theorem in Intuitionistic fuzzy metric space by using pointwise R-weak commutativity and reciprocal continuity of mappings satisfying contractive conditions.
In this paper, we prove some common fixed point theorems for two pair of compatible and subsequentially continuous mappings satisfying an implicit relation in Modified Intuitionistic fuzzy metric spaces. Consequently,...In this paper, we prove some common fixed point theorems for two pair of compatible and subsequentially continuous mappings satisfying an implicit relation in Modified Intuitionistic fuzzy metric spaces. Consequently, our results improve and sharpen many known common fixed point theorems available in the existing literature of metric fixed point theory.展开更多
In the present paper, we show that there exists a unique common fixed point for four self maps in a fuzzy metric space where two of the maps are reciprocally continuous and the other two maps are z-asymptotically comm...In the present paper, we show that there exists a unique common fixed point for four self maps in a fuzzy metric space where two of the maps are reciprocally continuous and the other two maps are z-asymptotically commuting.展开更多
In this paper we report on the effect of an lnxGal xN continuously graded buffer layer on an InGaN epilayer grown on a GaN template. In our experiment, three types of buffer layers including constant composition, cont...In this paper we report on the effect of an lnxGal xN continuously graded buffer layer on an InGaN epilayer grown on a GaN template. In our experiment, three types of buffer layers including constant composition, continuously graded composition, and the combination of constant and continuously graded composition are used. Surface morphologies, crystalline quality, indium incorporations, and relaxation degrees of InGaN epilayers with different buffer layers are investigated. It is found that the InxGa1-xN continuously graded buffer layer is effective to improve the surface morphology, crystalline quality, and the indium incorporation of the InGaN epilayer. These superior characteristics of the continuously graded buffer layer can be attributed to the sufficient strain release and the reduction of dislocations.展开更多
文摘In this paper, we prove a common fixed point theorem in Intuitionistic fuzzy metric space by using pointwise R-weak commutativity and reciprocal continuity of mappings satisfying contractive conditions.
文摘In this paper, we prove some common fixed point theorems for two pair of compatible and subsequentially continuous mappings satisfying an implicit relation in Modified Intuitionistic fuzzy metric spaces. Consequently, our results improve and sharpen many known common fixed point theorems available in the existing literature of metric fixed point theory.
文摘In the present paper, we show that there exists a unique common fixed point for four self maps in a fuzzy metric space where two of the maps are reciprocally continuous and the other two maps are z-asymptotically commuting.
基金Project supported by the National High Technology Research and Development Program of China (Grant Nos.2011AA03A112,2011AA03A106,and 2013AA03A101)the National Natural Science Foundation of China (Grant Nos.11204360,61210014,and 61078046)+2 种基金the Science & Technology Innovation Program of the Department of Education of Guangdong Province,China (Grant No.2012CXZD0017)the Industry–Academia-Research Union Special Fund of Guangdong Province,China (Grant No.2012B091000169)the Science & Technology Innovation Platform of Industry–Academia-Research Union of Guangdong Province–Ministry Cooperation Special Fund,China (Grant No.2012B090600038)
文摘In this paper we report on the effect of an lnxGal xN continuously graded buffer layer on an InGaN epilayer grown on a GaN template. In our experiment, three types of buffer layers including constant composition, continuously graded composition, and the combination of constant and continuously graded composition are used. Surface morphologies, crystalline quality, indium incorporations, and relaxation degrees of InGaN epilayers with different buffer layers are investigated. It is found that the InxGa1-xN continuously graded buffer layer is effective to improve the surface morphology, crystalline quality, and the indium incorporation of the InGaN epilayer. These superior characteristics of the continuously graded buffer layer can be attributed to the sufficient strain release and the reduction of dislocations.
