The effects of irradiation of 1.0 MeV electrons on the n＋-p GaAs middle cell of GalnP/GaAs/Ge triple-junction solar cells are investigated by temperature-dependent photoluminescence （PL） measurements in the 10-300K...The effects of irradiation of 1.0 MeV electrons on the n＋-p GaAs middle cell of GalnP/GaAs/Ge triple-junction solar cells are investigated by temperature-dependent photoluminescence （PL） measurements in the 10-300K temperature range. The appearance of thermal quenching of the PL intensity with increasing temperature confirms the presence of a nonradiative recombination center in the cell after the electron irradiation, and the thermal activation energy of the center is determined using the Arrhenius plot of the PL intensity. Furthermore, by comparing the thermal activation and the ionization energies of the defects, the nonradiative recombination center in the n＋ p GaAs middle cell acting as a primary defect is identified as the E5 electron trap located at Ec - 0.96 eV.展开更多
Influence of recombination centers’ changes on the form of phase portraits has been studied. It has been shown that the shape of the phase portraits depends on the concentration of semiconductor materials’ recombina...Influence of recombination centers’ changes on the form of phase portraits has been studied. It has been shown that the shape of the phase portraits depends on the concentration of semiconductor materials’ recombination centers.展开更多
Metal-halide perovskite nanocrystals(NCs)have gained significant attention in the field of optoelectronic and photonic devices due to their promising applications.Despite their exceptional optical properties,the impac...Metal-halide perovskite nanocrystals(NCs)have gained significant attention in the field of optoelectronic and photonic devices due to their promising applications.Despite their exceptional optical properties,the impact of different synthetic strategies on the fundamental nature of NCs,such as nonradiative recombination centers,remains poorly understood.In this study,we investigated the photophysical properties of CsPbBr_(3) NCs synthesized using two distinct methods,hot injection and ligand-assisted reprecipitation,at the individual particle level.We observed different blinking behaviors under specific photoexcitation power densities and proposed,through intensity-lifetime analysis and Monte-Carlo simulations,that these different synthetic strategies can fabricate NCs with similar crystal structures but distinct surface quenchers with varying energy levels,which significantly affected the photo-induced blinking-down and blinking-up behaviors in individual NCs.Our findings indicate a practical and feasible approach for controlling defect engineering in perovskite NCs,with significant implications for their use in optoelectronic and other technological applications.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 11675020,11375028,11075018 and 10675023
文摘The effects of irradiation of 1.0 MeV electrons on the n＋-p GaAs middle cell of GalnP/GaAs/Ge triple-junction solar cells are investigated by temperature-dependent photoluminescence （PL） measurements in the 10-300K temperature range. The appearance of thermal quenching of the PL intensity with increasing temperature confirms the presence of a nonradiative recombination center in the cell after the electron irradiation, and the thermal activation energy of the center is determined using the Arrhenius plot of the PL intensity. Furthermore, by comparing the thermal activation and the ionization energies of the defects, the nonradiative recombination center in the n＋ p GaAs middle cell acting as a primary defect is identified as the E5 electron trap located at Ec - 0.96 eV.
文摘Influence of recombination centers’ changes on the form of phase portraits has been studied. It has been shown that the shape of the phase portraits depends on the concentration of semiconductor materials’ recombination centers.
基金supported by the National Natural Science Foundation of China(Nos.22073046,62011530133)the Fundamental Research Funds for the Central Universities(Nos.020514380256,020514380278)+1 种基金the Double-Innovation Doctor Program of Jiangsu Province,China(No.JSSCBS20211151)the Funding for School-level Research Projects of Yancheng Institute of Technology(No.xjr2021062).
文摘Metal-halide perovskite nanocrystals(NCs)have gained significant attention in the field of optoelectronic and photonic devices due to their promising applications.Despite their exceptional optical properties,the impact of different synthetic strategies on the fundamental nature of NCs,such as nonradiative recombination centers,remains poorly understood.In this study,we investigated the photophysical properties of CsPbBr_(3) NCs synthesized using two distinct methods,hot injection and ligand-assisted reprecipitation,at the individual particle level.We observed different blinking behaviors under specific photoexcitation power densities and proposed,through intensity-lifetime analysis and Monte-Carlo simulations,that these different synthetic strategies can fabricate NCs with similar crystal structures but distinct surface quenchers with varying energy levels,which significantly affected the photo-induced blinking-down and blinking-up behaviors in individual NCs.Our findings indicate a practical and feasible approach for controlling defect engineering in perovskite NCs,with significant implications for their use in optoelectronic and other technological applications.
