In this paper,drain current transient characteristics ofβ-Ga2O3 high electron mobility transistor(HEMT)are studied to access current collapse and recovery time due to dynamic population and de-population of deep leve...In this paper,drain current transient characteristics ofβ-Ga2O3 high electron mobility transistor(HEMT)are studied to access current collapse and recovery time due to dynamic population and de-population of deep level traps and interface traps.An approximately 10 min,and 1 h of recovery time to steady-state drain current value is measured under 1 ms of stress on the gate and drain electrodes due to iron(Fe)–dopedβ-Ga2O3 substrate and germanium(Ge)–dopedβ-Ga2O3 epitaxial layer respectively.On-state current lag is more severe due to widely reported defect trap EC–0.82 e V over EC–0.78 e V,-0.75 e V present in Iron(Fe)-dopedβ-Ga2O3 bulk crystals.A negligible amount of current degradation is observed in the latter case due to the trap level at EC–0.98 e V.It is found that occupancy of ionized trap density varied mostly under the gate and gate–source area.This investigation of reversible current collapse phenomenon and assessment of recovery time inβ-Ga2O3 HEMT is carried out through 2 D device simulations using appropriate velocity and charge transport models.This work can further help in the proper characterization ofβ-Ga2O3 devices to understand temporary and permanent device degradation.展开更多
CBA反应器是美国BV公司四级转化冷床吸附(Cold Bed Adsorption,以下简称CBA)工艺中的重要设备。在重庆天然气净化总厂引进分厂CBA装置各级反应器人孔处多次出现耐火衬里垮塌、催化剂泄漏,引起液硫管线堵塞,从而造成多次临停事故。针对...CBA反应器是美国BV公司四级转化冷床吸附(Cold Bed Adsorption,以下简称CBA)工艺中的重要设备。在重庆天然气净化总厂引进分厂CBA装置各级反应器人孔处多次出现耐火衬里垮塌、催化剂泄漏,引起液硫管线堵塞,从而造成多次临停事故。针对这一问题,对该处衬里垮塌分别从工艺和设备两方面的原因进行了分析。最后从工艺方面提出了低负荷运行时加燃料气与酸气混烧以提高反应器温度的改造方案,从设备方面提出了对人孔附近保温结构、本体结构、衬里结构等多方面进行改进的改造方案,经过上述技术改造后效果明显。展开更多
基金an outcome of the collaborative R&D work undertaken in the project under the Visvesvaraya PhD Scheme of Ministry of Electronics&Information Technology,Govt.of India,being implemented by Digital India Corporation。
文摘In this paper,drain current transient characteristics ofβ-Ga2O3 high electron mobility transistor(HEMT)are studied to access current collapse and recovery time due to dynamic population and de-population of deep level traps and interface traps.An approximately 10 min,and 1 h of recovery time to steady-state drain current value is measured under 1 ms of stress on the gate and drain electrodes due to iron(Fe)–dopedβ-Ga2O3 substrate and germanium(Ge)–dopedβ-Ga2O3 epitaxial layer respectively.On-state current lag is more severe due to widely reported defect trap EC–0.82 e V over EC–0.78 e V,-0.75 e V present in Iron(Fe)-dopedβ-Ga2O3 bulk crystals.A negligible amount of current degradation is observed in the latter case due to the trap level at EC–0.98 e V.It is found that occupancy of ionized trap density varied mostly under the gate and gate–source area.This investigation of reversible current collapse phenomenon and assessment of recovery time inβ-Ga2O3 HEMT is carried out through 2 D device simulations using appropriate velocity and charge transport models.This work can further help in the proper characterization ofβ-Ga2O3 devices to understand temporary and permanent device degradation.
文摘CBA反应器是美国BV公司四级转化冷床吸附(Cold Bed Adsorption,以下简称CBA)工艺中的重要设备。在重庆天然气净化总厂引进分厂CBA装置各级反应器人孔处多次出现耐火衬里垮塌、催化剂泄漏,引起液硫管线堵塞,从而造成多次临停事故。针对这一问题,对该处衬里垮塌分别从工艺和设备两方面的原因进行了分析。最后从工艺方面提出了低负荷运行时加燃料气与酸气混烧以提高反应器温度的改造方案,从设备方面提出了对人孔附近保温结构、本体结构、衬里结构等多方面进行改进的改造方案,经过上述技术改造后效果明显。
