Experimental and numerical analyses of high voltage 4H-SiC junction barrier Schottky rectifiers with linearly graded field limiting ring

This paper describes the successful fabrication of 4H-SiC junction barrier Schottky （JBS） rectifiers with a linearly graded field limiting ring （LG-FLR）. Linearly variable ring spacings for the FLR termination are applied to improve the blocking voltage by reducing the peak surface electric field at the edge termination region, which acts like a variable lateral doping profile resulting in a gradual field distribution. The experimental results demonstrate a breakdown voltage of 5 kV at the reverse leakage current density of 2 mA/cm2 （about 80% of the theoretical value）. Detailed numerical simulations show that the proposed termination structure provides a uniform electric field profile compared to the conventional FLR termi- nation, which is responsible for 45% improvement in the reverse blocking voltage despite a 3.7% longer total termination length.

Numerical and experimental study of the mesa configuration in high-voltage 4H–SiC PiN rectifiers

The effect of the mesa configuration on the reverse breakdown characteristic of a SiC PiN rectifier for high-voltage applications is analyzed in this study.Three geometrical parameters,i.e.,mesa height,mesa angle and mesa bottom corner,are investigated by numerical simulation.The simulation results show that a deep mesa height,a small mesa angle and a smooth mesa bottom（without sub-trench） could contribute to a high breakdown voltage due to a smooth and uniform surface electric field distribution.Moreover,an optimized mesa structure without sub-trench（mesa height of 2.2 μm and mesa angle of 20°） is experimentally demonstrated.A maximum reverse blocking voltage of 4 kV and a forward voltage drop of 3.7 V at 100 A/cm^2 are obtained from the fabricated diode with a 30-μm thick N^- epi-layer,corresponding to 85% of the ideal parallel-plane value.The blocking characteristic as a function of the JTE dose is also discussed for the PiN rectifiers with and without interface charge.

Study of a double epi-layers SiC junction barrier Schottky rectifiers embedded P layer in the drift region

This paper proposes a double epi-layers 4H-SiC junction barrier Schottky rectifier （JBSR） with embedded P layer （EPL） in the drift region. The structure is characterized by the P-type layer formed in the n-type drift layer by epitaxial overgrowth process. The electric field and potential distribution are changed due to the buried P-layer, resulting in a high breakdown voltage （BV） and low specific on-resistance （Ron,sp）. The influences of device parameters, such as the depth of the embedded P＋ regions, the space between them and the doping concentration of the drift region, etc., on BV and Ron,sp are investigated by simulations, which provides a particularly useful guideline for the optimal design of the device. The results indicate that BV is increased by 48.5% and Baliga＇s figure of merit （BFOM） is increased by 67.9% compared to a conventional 4H-SiC JBSR.

Influence of geometrical parameters on the behaviour of SiC merged PiN Schottky rectifiers with junction termination extension

This paper investigates the behaviours of 4H--SiC merged PiN Schottky （MPS） rectifiers with junction termination extension （JTE） by extensive numerical simulations. The simulated results show that the present model matches the experimental data very well. The influences of the JTE design parameters such as the doping concentration and length of the JTE on the breakdown characteristics are discussed in detail. Then the temperature sensitivity of the forward behaviour is studied in terms of the different designs of 4H--SiC MPS with JTE, which provides a particularly useful guideline for the optimal design of MPS rectifiers with JTE.

Characterization of Self-driven Cascode-Configuration Synchronous Rectifiers

This paper presents a cascode configuration synchronous rectifier device based on silicon MOSFET and Schottky diode,which can replace traditional power diode directly.This structure has self-driven ability with simple external circuit,and the conduction characteristic is preferable to a power diode.Static characterization and switching behavior analysis of proposed structure are conducted in this paper.The switching process is illustrated in detail using real model which considers the parasitic inductances and the nonlinearity of junction capacitors.The real time internal voltage and current value during switching transition are deduced with the equivalent circuit.To validate the analysis,two voltage specification rectifiers are built.Finally,double-pulse test results and the practical design example verify the performance advantages of proposed structure.

Fault diagnosis algorithm for 3-phase passive rectifiers based on frequency-domain analysis for acceleration grid power supply in CFETR NBI system

The acceleration grid power supply(AGPS) is a crucial part of the Negative-ion Neutral Beam Injection system in the China Fusion Engineering Test Reactor,which includes a 3-phase passive(diode) rectifier.To diagnose and localize faults in the rectifier,this paper proposes a frequencydomain analysis-based fault diagnosis algorithm for the rectifier in AGPS.First,time-domain expressions and spectral characteristics of the output voltage of the TPTL-NPC inverter-based power supply are analyzed.Then,frequency-domain analysis-based fault diagnosis and frequency-domain analysis-based sub-fault diagnosis algorithms are proposed to diagnose open circuit(OC) faults of diode(s),which benefit from the analysis of harmonics magnitude and phase-angle of the output voltage.Only a fundamental period is needed to diagnose and localize exact faults,and a strong Variable-duration Fault Detection Method is proposed to identify acceptable ripple from OC faults.Detailed simulations and experimental results demonstrate the effectiveness,quickness,and robustness of the proposed algorithms,and the diagnosis algorithms proposed in this article provide a significant method for the fault diagnosis of other rectifiers and converters.

A Voltage Sensorless Finite Control Set-Model Predictive Control for Three-Phase Voltage Source PWM Rectifiers

In this paper,a grid voltage sensorless model predictive control is proposed and verified by simulation and experimental tests for a PWM rectifier.The presented method is simple and cost effective due to no need of modulator and voltage sensors.The developed sliding mode voltage observer(SMVO)can theoretically track the grid voltage accurately without phase lag and magnitude error.Based on the proposed SMVO,the finite control set-model predictive control(FCS-MPC)is incorporated for power regulation.The active power and reactive power are calculated and predicted using the measured current and the estimated grid voltage from the SMVO.With the predicated power for one-step delay compensation,the best voltage vector minimizing the tracking error is selected by FCS-MPC.The whole algorithm is implemented in stationary frame without using Park's transformation.Both the simulation and experimental results validate the effectiveness of the proposed method.

Enhancement of thermal rectification by asymmetry engineering of thermal conductivity and geometric structure for multi-segment thermal rectifier

Thermal rectification is an exotic thermal transport phenomenon,an analog to electrical rectification,in which heat flux along one direction is larger than that in the other direction and is of significant interest in electronic device applications.However,achieving high thermal rectification efficiency or rectification ratio is still a scientific challenge.In this work,we performed a systematic simulation of thermal rectification by considering both efforts of thermal conductivity asymmetry and geometrical asymmetry in a multi-segment thermal rectifier.It is found that the high asymmetry of thermal conductivity and the asymmetry of the geometric structure of multi-segment thermal rectifiers can significantly enhance the thermal rectification,and the combination of both thermal conductivity asymmetry and geometrical asymmetry can further improve thermal rectification efficiency.This work suggests a possible way for improving thermal rectification devices by asymmetry engineering.

High-Efficiency Rectifier for Wireless Energy Harvesting Based on Double Branch Structure

A rectifier circuit for wireless energy harvesting(WEH) with a wide input power range is proposed in this paper. We build up accurate models of the diodes to improve the accuracy of the design of the rectifier. Due to the nonlinear characteristics of the diodes, a new band-stop structure is introduced to reduce the imaginary part impedance and suppress harmonics. A novel structure with double branches and an optimized λ/4 microstrip line is proposed to realize the power division ratio adjustment by the input power automatically. The proposed two branches can satisfy the two cases with input power of-20 dBm to 0 dBm and 0 dBm to 15 dBm, respectively. Here, dBm = 10 log(P mW), and P represents power. An impedance compression network(ICN) is correspondingly designed to maintain the input impedance stability over the wide input power range. A rectifier that works at 2.45 GHz is implemented. The measured results show that the highest efficiency can reach 51.5% at the output power of 0 dBm and higher than 40% at the input power of-5 dBm to 12 dBm.

A Fractional Order Fast Repetitive Control Paradigm of Vienna Rectifier for Power Quality Improvement

Due to attractive features,including high efficiency,low device stress,and ability to boost voltage,a Vienna rectifier is commonly employed as a battery charger in an electric vehicle(EV).However,the 6k±1 harmonics in the acside current of the Vienna rectifier deteriorate theTHDof the ac current,thus lowering the power factor.Therefore,the current closed-loop for suppressing 6k±1 harmonics is essential tomeet the desired total harmonic distortion(THD).Fast repetitive control(FRC)is generally adopted;however,the deviation of power grid frequency causes delay link in the six frequency fast repetitive control to become non-integer and the tracking performance to deteriorate.This paper presents the detailed parameter design and calculation of fractional order fast repetitive controller(FOFRC)for the non-integer delay link.The finite polynomial approximates the non-integer delay link through the Lagrange interpolation method.By comparing the frequency characteristics of traditional repetitive control,the effectiveness of the FOFRC strategy is verified.Finally,simulation and experiment validate the steadystate performance and harmonics suppression ability of FOFRC.

Modeling, Analysis and Simulation of a High-Efficiency Battery Control System

This paper explains step-by-step modeling and simulation of the full circuits of a battery control system and connected together starting from the AC input source to the battery control and storage system.The three-phase half-controlled rectifier has been designed to control and convert the AC power into DC power.In addition,two types of direct current converters have been used in this paper which are a buck and bidirectional DC/DC converters.These systems adjust the output voltage to be lower or higher than the input voltage.In the buck converters,the main switch operates in conduction or cut-off mode and is triggered by a Pulse-Width Modulated(PWM)signal.The output and input voltage levels ratio are used to calculate thePWMsignal’s duty cycle.Therefore,the duty cycle indicates the operation mode of the converter in steady-state operation.In this study,we analyze and control of a buck converter with the PWM signal.Besides,the bidirectional DC/DC converter has been achieved and optimized by PI control methods to control the battery charging and discharging modes.The simulation has been applied via the Matlab/Simulink environment.The results show the activity of each part of the designed circuits starting from the converters and the battery control system in charge and discharge modes.

Enhancement of holding voltage by a modified low-voltage trigger silicon-controlled rectifier structure for electrostatic discharge protection

A novel structure of low-voltage trigger silicon-controlled rectifiers(LVTSCRs) with low trigger voltage and high holding voltage is proposed for electrostatic discharge(ESD) protection. The proposed ESD protection device possesses an ESD implant and a floating structure. This improvement enhances the current discharge capability of the gate-grounded NMOS and weakens the current gain of the silicon-controlled rectifier current path. According to the simulation results, the proposed device retains a low trigger voltage characteristic of LVTSCRs and simultaneously increases the holding voltage to 5.53 V, providing an effective way to meet the ESD protection requirement of the 5 V CMOS process.

Hybrid Dynamic Optimization for Multilevel Security System in Disseminating Confidential Information

Security systems are the need of the hour to protect data from unauthorized access.The dissemination of confidential information over the public network requires a high level of security.The security approach such as steganography ensures confidentiality,authentication,integrity,and non-repudiation.Steganography helps in hiding the secret data inside the cover media so that the attacker can be confused during the transmission process of secret data between sender and receiver.Therefore,we present an efficient hybrid security model that provides multifold security assurance.To this end,a rectified Advanced Encryption Standard(AES)algorithm is proposed to overcome the problems existing in AES such as pattern appearance and high computations.The modified AES is used for the encryption of the stego image that contains the digitally signed encrypted secret data.The enciphering and deciphering of the secret data are done using the Rivest–Shamir–Adleman(RSA)algorithm.The experiments are conducted on the images of the USC-SIPI standard image database.The experimental results prove that the proposed hybrid system outperforms other SOTA(state-of-the-art)approaches.

Scavenging Microwave Wireless Power:A Unified Model,Rectenna Design Automation,and Cutting-Edge Techniques

While sufficient review articles exist on inductive short-range wireless power transfer(WPT),long-haul microwave WPT(MWPT)for solar power satellites,and ambient microwave wireless energy harvesting(MWEH)in urban areas,few studies focus on the fundamental modeling and related design automation of receiver systems.This article reviews the development of MWPT and MWEH receivers,with a focus on rectenna design automation.A novel rectifier model capable of accurately modeling the rectification process under both high and low input power is presented.The model reveals the theoretical boundary of radio frequency-to-direct current(dc)power conversion efficiency and,most importantly,enables an automated system design.The automated rectenna design flow is sequential,with the minimal engagement of iterative optimization.It covers the design automation of every module(i.e.,rectifiers,matching circuits,antennae,and dc–dc converters).Scaling-up of the technique to large rectenna arrays is also possible,where the challenges in array partitioning and power combining are briefly discussed.In addition,several cutting-edge rectenna techniques for MWPT and MWEH are reviewed,including the dynamic range extension technique,the harmonics-based retro-directive technique,and the simultaneous wireless information and power transfer technique,which can be good complements to the presented automated design methodology.

A Hybrid Five-Level Single-Phase Rectifier with Low Common-Mode Voltage

Rectifiers with high efficiency and high power density are crucial to the stable and efficient power supply of 5G communication base stations,which deserves in-depth investigation.In general,there are two key problems to be addressed:supporting both alternating current(AC)and direct current(DC)input,and minimizing the common-mode voltage as well as leakage current for safety reasons.In this paper,a hybrid five-level single-phase rectifier is proposed.A five-level topology is adopted in the upper arm,and a half-bridge diode topology is adopted in the lower arm.A dual closed-loop control strategy and a flying capacitor voltage regulation method are designed accordingly so that the compatibility of both AC and DC input is realized with low common voltage and small passive devices.Simulation and experimental results demonstrate the effectiveness and performance of the proposed rectifier.

Varifolds的某些Rectifiability特征

该文证明下面的定理:设一Varifold V具有特征0<lim_(r→0)(μV(Cr(x)))/(r^n)<∞,那么,V是Rectifiable的.另外,该文还给出了一个Varifold的结构表示定理.

Heisenberg群H^n上的有界变差函数

本文有四个目标:一是研究了H-Caccioppoli集的几何性质;二是证明了H^n上有界变差函数u的跳跃集J_u是H-Rectifiable并刻画不连续集S_u和跳跃集J_u的特征;三是证明了u在Ω上几乎处处近似可微并研究u的逐点行为;最后还证明了D_Hu作为Radon测度能分解成三部分,即D_Hu=L_u·^(2n+1)+2w_(2n-1)/w_(2n+1)(u^+-u^-)v_uS_d^(Q-1)J_u+_H^cu,其中L_u ∈ R^(2n)是u的近似微分,u^+,u^-,v_u分别是u在跳跃点的近似上、下极限和跳跃方向。

无霜冰箱的热力计算

无霜冰箱的热力计算王曙光随着人民生活水平的提高，冰箱向大型、多门、多温、无霜型发展。据国内有关资料统计：１９８８年无霜冰箱仅有万宝、上菱等四个厂家的五、六种型号，产量也仅占冰箱产量的５％左右，而１９９３年无霜冰箱已发展到近十个厂家的二十多种型号，产量...

Harmonic Currents of Semiconductor Pulse Switching Converters

Due to the operation of power semiconductor switching converters, the content of harmonic currents, which these switching converters take from the feed array, is still increasing. One of the possible ways of minimizing these currents is the use of pulse switching converters. On one hand, the original, characteristic harmonic ones are minimized, but, on the other hand, new frequencies caused by the modulation frequency appear in the current spectrum. The level of the currents of these frequencies is small and is scarcely dependent on the load of the converter. It may happen that the proportional value of the monitored harmonic one is high, although the absolute value is low. In the article presented, there is a description of the activity of the pulse voltage rectifier and an analysis of the current taken. The other part contains the results of the harmonic analysis of the stated current, including both the absolute and proportional values according to the load. In the conclusion, there are results of measurements of pulsed switching converters taken from the real measurement.

Effects of Relative Orientation of Molecules on Electron Transport in Molecular Devices

Effects of relative orientation of the molecules on electron transport in molecular devices are studied by the non-equilibrium Green function method based on density functional theory. In particular, two molecular devices with planar Au7 and Ag3 clusters sandwiched between the Al（100） electrodes axe studied. In each device, two typical configurations with the clusters parallel and vertical to the electrodes are considered. It is found that the relative orientation affects the transport properties of these two devices completely differently. In the Al（100）- Au7-Al（100） device, the conductance and the current of the parallel configuration are much larger than those in the vertical configuration, while in the Al（100）-Ag3-Al（100） device, an opposite conclusion is obtained.