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Future changes in rainfall, temperature and reference evapotranspiration in the central India by least square support vector machine 被引量:5
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作者 Sananda Kundu Deepak Khare Arun Mondal 《Geoscience Frontiers》 SCIE CAS CSCD 2017年第3期583-596,共14页
Climate change affects the environment and natural resources immensely. Rainfall, temperature and evapotranspiration are major parameters of climate affecting changes in the environment. Evapotrans- piration plays a k... Climate change affects the environment and natural resources immensely. Rainfall, temperature and evapotranspiration are major parameters of climate affecting changes in the environment. Evapotrans- piration plays a key role in crop production and water balance of a region, one of the major parameters affected by climate change. The reference evapotranspiration or ETo is a calculated parameter used in this research. In the present study, changes in the future rainfall, minimum and maximum temperature, and ETo have been shown by downscaling the HadCM3 (Hadley Centre Coupled Model version 3) model data. The selected study area is located in a part of the Narmada river basin area in Madhya Pradesh in central India. The downscaled outputs of projected rainfall, ETo and temperatures have been shown for the 21st century with the HADCM3 data of A2 scenario by the Least Square Support Vector Machine (LS-SVM) model. The efficiency of the LS-SVM model was measured by different statistical methods. The selected predictors show considerable correlation with the rainfall and temperature and the application of this model has been done in a basin area which is an agriculture based region and is sensitive to the change of rainfall and temperature. Results showed an increase in the future rainfall, temperatures and ETo. The temperature increase is projected in the high rise of minimum temperature in winter time and the highest increase in maximum temperature is projected in the pre-monsoon season or from March to May. Highest increase is projected in the 2080s in 2081-2091 and 2091-2099 in maximum temperature and 2091-2099 in minimum temperature in all the stations. Winter maximum temperature has been observed to have increased in the future. High rainfall is also observed with higher ETo in some decades. Two peaks of the increase are observed in ETo in the April-May and in the October. Variation in these parameters due to climate change might have an impact on the future water resource of the study area, which is mainly an agricultural based region, and will help in proper planning and management. 展开更多
关键词 Rainfall temperature reference evapotranspiration (ETo) Downscaling Least Square Support Vector Machine (LS-SVM)
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Curvature Compensated CMOS Bandgap Reference with Novel Process Variation Calibration Technique 被引量:1
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作者 Jiancheng Zhang Mao Ye +1 位作者 Yiqiang Zhao Gongyuan Zhao 《Journal of Beijing Institute of Technology》 EI CAS 2018年第2期182-188,共7页
A lowtemperature coefficient( TC) bandgap reference( BGR) with novel process variation calibration technique is proposed in this paper. This proposed calibration technique compensating both TC and output value of ... A lowtemperature coefficient( TC) bandgap reference( BGR) with novel process variation calibration technique is proposed in this paper. This proposed calibration technique compensating both TC and output value of BGR achieves fine adjustment step towards the reference voltage,while keeping optimal TC by utilizing large resistance to help layout match. The high-order curvature compensation realized by poly and p-diffusion resistors is introduced into the design to guarantee the temperature characteristic. Implemented in 180 nm technology,the proposed BGR has been simulated to have a power supply rejection ratio( PSRR) of 91 dB@100 Hz. The calibration technique covers output voltage scope of 0. 49 V-0. 56 Vwith TC of 9. 45 × 10^(-6)/℃-9. 56 × 10^(-6)/℃ over the temperature range of-40 ℃-120 ℃. The designed BGR provides a reference voltage of 500 mV,with measured TC of 10. 1 × 10^(-6)/℃. 展开更多
关键词 bandgap reference voltage process variation resistance-trimming current-calibration curvature compensation temperature coefficient
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Novel high-PSRR high-order curvature-compensated bandgap voltage reference 被引量:1
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作者 Zhou Qianneng Yan Kai +3 位作者 Lin Jinzhao Pang Yu Li Guoquan Luo Wei 《The Journal of China Universities of Posts and Telecommunications》 EI CSCD 2016年第2期66-72,96,共8页
This paper proposes a novel high-power supply rejection ratio(high-PSRR) high-order curvature-compensated CMOS bandgap voltage reference(BGR) in SMIC 0.18 μm CMOS process. Three kinds of current are added to a co... This paper proposes a novel high-power supply rejection ratio(high-PSRR) high-order curvature-compensated CMOS bandgap voltage reference(BGR) in SMIC 0.18 μm CMOS process. Three kinds of current are added to a conventional BGR in order to improve the temperature drift within wider temperature range, which include a piecewise-curvaturecorrected current in high temperature range, a piecewise-curvature-corrected current in low temperature range and a proportional-to-absolute-temperature T^(1.5) current. The high-PSRR characteristic of the proposed BGR is achieved by adopting the technique of pre-regulator. Simulation results shows that the temperature coefficient of the proposed BGR with pre-regulator is 8.42x10^(-6)′ /℃ from - 55 ℃ to 125 ℃ with a 1.8 V power supply voltage. The proposed BGR with pre-regulator achieves PSRR of - 123.51 dB, - 123.52 dB, - 88.5 dB and - 50.23 dB at 1 Hz, 100 Hz, 100 kHz and 1 MHz respectively. 展开更多
关键词 bandgap voltage reference pre-regulator temperature coefficient power supply rejection ratio
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A simple and effective method to achieve the successful start-up of a current reference
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作者 韩蕾 王玉军 +2 位作者 张小兴 戴宇杰 吕英杰 《Journal of Semiconductors》 EI CAS CSCD 2012年第8期123-126,共4页
Start-up design is a critical issue in current reference as it is very closely related to production yield. However, its function is difficult to predict using normal transaction simulations before the device is put i... Start-up design is a critical issue in current reference as it is very closely related to production yield. However, its function is difficult to predict using normal transaction simulations before the device is put into diffusion. In this paper, we discuss a simple and effective simulation approach which ensures a successful start-up process in a self-biased temperature independent current reference. The circuit is implemented in a class-D power amplifier with a 0.35 #m BiCMOS process and the experimental result validates that, by using this method, the start-up success rate can be greatly improved to 100%. 展开更多
关键词 temperature independent current reference bi-stable circuit start-up process simulation method yield improvement
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