A 1.3μm two-section multi-quantum well refective semiconductor optical amplifier is designed and fabricated. The impacts of injection current density ratio and the reflectivity of the reflective facet on gain, sat- u...A 1.3μm two-section multi-quantum well refective semiconductor optical amplifier is designed and fabricated. The impacts of injection current density ratio and the reflectivity of the reflective facet on gain, sat- uration and noise characteristics are studied theoretically and experimentally. The results indicate that the gain and saturation power can be easily manipulated by changing the current density ratio; and better gain and noise characteristics can be obtained when the reflectivity is appropriately selected.展开更多
基金supported by the National High Technology Research and Development Program of China(No.2013A014401)the Specialized Research Fund for the Doctoral Program of Higher Education(SRFDP)(No.20120142110064)the Natural Science Foundation of Hubei Province(No.2012FFB02209)
文摘A 1.3μm two-section multi-quantum well refective semiconductor optical amplifier is designed and fabricated. The impacts of injection current density ratio and the reflectivity of the reflective facet on gain, sat- uration and noise characteristics are studied theoretically and experimentally. The results indicate that the gain and saturation power can be easily manipulated by changing the current density ratio; and better gain and noise characteristics can be obtained when the reflectivity is appropriately selected.
