A novel 2D analytical model for the doping profile of the bulk silicon RESURF LDMOS drift region is proposed. According to the proposed model, to obtain good performance, the doping profile in the total drift region o...A novel 2D analytical model for the doping profile of the bulk silicon RESURF LDMOS drift region is proposed. According to the proposed model, to obtain good performance, the doping profile in the total drift region of a RESURF LDMOS with a field plate should be piecewise linearly graded. The breakdown voltage of the proposed RESURF LDMOS with a piecewise linearly graded doping drift region is improved by 58. 8%, and the specific on-resistance is reduced by 87. 4% compared with conventional LDMOS. These results are verified by the two-dimensional process simulator Tsuprem-4 and the device simulator Medici.展开更多
This paper reports that the doped bi-layer organic light-emitting devices are fabricated by doping in different regions of the light-emitting layer, the admittance and luminance spectra to characterize the capacitance...This paper reports that the doped bi-layer organic light-emitting devices are fabricated by doping in different regions of the light-emitting layer, the admittance and luminance spectra to characterize the capacitance and luminance of the device are measured. Negative capacitance （NC） appeared at low frequencies when the doped devices are biased with high voltages. The measured phase difference between AC voltage applied across the device and AC current flowing through the device show that the device is inductive when NC appears.展开更多
The present paper is about a contribution to the bifacial PV cell performances improvement. The PV cell efficiency is weak compared to the strong energy demand. In this study, the base thickness impacts and the p+<...The present paper is about a contribution to the bifacial PV cell performances improvement. The PV cell efficiency is weak compared to the strong energy demand. In this study, the base thickness impacts and the p+</sup> zone size influence are evaluated on the rear face of the polycrystalline back surface field bifacial silicon PV cell. The photocurrent density and photovoltage behaviors versus thickness of these regions are studied. From a three-dimensional grain of the polycrystalline bifacial PV cell, the magneto-transport and continuity equations of excess minority carriers are solved to find the expression of the density of excess minority carriers and the related electrical parameters, such as the photocurrent density, the photovoltage and the electric power for simultaneous illumination on both sides. The photocurrent density, the photovoltage and electric power versus junction dynamic velocity decrease for different thicknesses of base and the p+</sup> region increases for simultaneous illumination on both sides. It is found that the thickness of the p+</sup> region at 0.1 μm and the base size at 100 μm allow reaching the best bifacial PV cell performances. Consequently, it is imperative to consider the reduction in the thickness of the bifacial PV cell for exhibition of better performance. This reduced the costs and increase production speed while increasing conversion efficiency.展开更多
文摘A novel 2D analytical model for the doping profile of the bulk silicon RESURF LDMOS drift region is proposed. According to the proposed model, to obtain good performance, the doping profile in the total drift region of a RESURF LDMOS with a field plate should be piecewise linearly graded. The breakdown voltage of the proposed RESURF LDMOS with a piecewise linearly graded doping drift region is improved by 58. 8%, and the specific on-resistance is reduced by 87. 4% compared with conventional LDMOS. These results are verified by the two-dimensional process simulator Tsuprem-4 and the device simulator Medici.
基金supported by the Natural Science Foundation of the Shanghai Committee of Science and Technology,China (GrantNo. 08JC1402300)
文摘This paper reports that the doped bi-layer organic light-emitting devices are fabricated by doping in different regions of the light-emitting layer, the admittance and luminance spectra to characterize the capacitance and luminance of the device are measured. Negative capacitance （NC） appeared at low frequencies when the doped devices are biased with high voltages. The measured phase difference between AC voltage applied across the device and AC current flowing through the device show that the device is inductive when NC appears.
文摘The present paper is about a contribution to the bifacial PV cell performances improvement. The PV cell efficiency is weak compared to the strong energy demand. In this study, the base thickness impacts and the p+</sup> zone size influence are evaluated on the rear face of the polycrystalline back surface field bifacial silicon PV cell. The photocurrent density and photovoltage behaviors versus thickness of these regions are studied. From a three-dimensional grain of the polycrystalline bifacial PV cell, the magneto-transport and continuity equations of excess minority carriers are solved to find the expression of the density of excess minority carriers and the related electrical parameters, such as the photocurrent density, the photovoltage and the electric power for simultaneous illumination on both sides. The photocurrent density, the photovoltage and electric power versus junction dynamic velocity decrease for different thicknesses of base and the p+</sup> region increases for simultaneous illumination on both sides. It is found that the thickness of the p+</sup> region at 0.1 μm and the base size at 100 μm allow reaching the best bifacial PV cell performances. Consequently, it is imperative to consider the reduction in the thickness of the bifacial PV cell for exhibition of better performance. This reduced the costs and increase production speed while increasing conversion efficiency.
